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    A1 SOT-223 MOSFET Search Results

    A1 SOT-223 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    A1 SOT-223 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet L 3055

    Abstract: 3055 sot-223 mj 3055 A1 SOT-223 MOSFET 100T3LF NTF3055-100T1G sot 223 marking code TP NTF3055-100-D
    Text: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 110 mW Features


    Original     		PDF NTF3055-100 OT-223 NTF3055-100/D mosfet L 3055 3055 sot-223 mj 3055 A1 SOT-223 MOSFET 100T3LF NTF3055-100T1G sot 223 marking code TP NTF3055-100-D

    FT960

    Abstract: ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223


    Original     		PDF MMFT960T1 OT-223 OT-223 MMFT960T1/D FT960 ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET

    5L175

    Abstract: NTF3055L175 NTF3055L175T1 NTF3055L175T1G NTF3055L175T3 NTF3055L175T3G NTF3055L175T3LF
    Text: NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com 2.0 AMPERES, 60 VOLTS


    Original     		PDF NTF3055L175 OT-223 NTF3055L175/D 5L175 NTF3055L175 NTF3055L175T1 NTF3055L175T1G NTF3055L175T3 NTF3055L175T3G NTF3055L175T3LF

    ft960

    Abstract: MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223


    Original     		PDF MMFT960T1 OT-223 OT-223 MMFT960T1/D ft960 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223


    Original     		PDF MMFT960T1 MMFT960T1/D

    Untitled

    Abstract: No abstract text available
    Text: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW


    Original     		PDF NTF3055â 100/D

    3055G

    Abstract: mosfet L 3055 mj 3055 3055 sot-223
    Text: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW


    Original     		PDF NTF3055-100 OT-223 NTF3055-100/D 3055G mosfet L 3055 mj 3055 3055 sot-223

    Untitled

    Abstract: No abstract text available
    Text: NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while


    Original     		PDF NIF5003N NIF5003N/D

    5003N

    Abstract: NIF5003N NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G
    Text: NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while


    Original     		PDF NIF5003N OT-223 NIF5003N/D 5003N NIF5003N NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G

    NIF5003N

    Abstract: NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G
    Text: NIF5003N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while


    Original     		PDF NIF5003N OT-223 NIF5003N/D NIF5003N NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G

    9N05A

    Abstract: NIF9N05ACLT1G MARKING 117-a SOT-223 NIF9N05ACLT3G A1 SOT-223 MOSFET
    Text: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped


    Original     		PDF NIF9N05CL, NIF9N05ACL OT-223 NIF9N05CL/D 9N05A NIF9N05ACLT1G MARKING 117-a SOT-223 NIF9N05ACLT3G A1 SOT-223 MOSFET

    5002n

    Abstract: No abstract text available
    Text: NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process


    Original     		PDF NIF5002N NIF5002N/D 5002n

    5002n

    Abstract: NIF5002N NIF5002NT1 NIF5002NT1G NIF5002NT3 NIF5002NT3G NIF5002
    Text: NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 http://onsemi.com HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process


    Original     		PDF NIF5002N OT-223 NIF5002N/D 5002n NIF5002N NIF5002NT1 NIF5002NT1G NIF5002NT3 NIF5002NT3G NIF5002

    Untitled

    Abstract: No abstract text available
    Text: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped


    Original     		PDF NIF9N05CL, NIF9N05ACL NIF9N05CL/D

    Untitled

    Abstract: No abstract text available
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTF2955, NVF2955, NVF2955P NTF2955/D

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTF2955, NVF2955, NVF2955P OT-223 NTF2955/D 2955g NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G

    2955G

    Abstract: NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10
    Text: NTF2955, NTF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Packages are Available Applications • • • • Power Supplies


    Original     		PDF NTF2955, NTF2955P OT-223 NTF2955/D 2955G NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10

    NVF3055

    Abstract: 3055G NVF3055-100 NTF3055-100T1G
    Text: NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS on = 110 mW


    Original     		PDF NTF3055-100, NVF3055-100 OT-223 AEC-Q101 NVF3055-100 NTF3055-100/D NVF3055 3055G NTF3055-100T1G

    Untitled

    Abstract: No abstract text available
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTF2955, NVF2955, NVF2955P OT-223 AEC-Q101 NTF2955/D

    5P03

    Abstract: NTF5P03T3G MMFT5P03HD NTF5P03T3 P-channel sot-223 ntf5p03t3 sot223
    Text: NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package


    Original     		PDF NTF5P03T3 OT-223 OT-223 MMFT5P03HD NTF5P03T3/D 5P03 NTF5P03T3G MMFT5P03HD NTF5P03T3 P-channel sot-223 ntf5p03t3 sot223

    Untitled

    Abstract: No abstract text available
    Text: NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P−Channel SOT−223 http://onsemi.com Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package Avalanche Energy Specified


    Original     		PDF NTF5P03, NVF5P03 OT-223 OT-223 AEC-Q101 NVF5P03T3G MMFT5P03HD NTF5P03T3/D

    Untitled

    Abstract: No abstract text available
    Text: NTF5P03T3G, NVF5P03T3G Power MOSFET 5.2 A, 30 V P−Channel SOT−223 http://onsemi.com Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package Avalanche Energy Specified


    Original     		PDF NTF5P03T3G, NVF5P03T3G MMFT5P03HD NTF5P03T3/D

    2955E

    Abstract: equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3
    Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.


    Original     		PDF MMFT2955E OT-223 OT-223 MMFT2955E/D 2955E equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3

    2955e

    Abstract: equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261
    Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.


    Original     		PDF MMFT2955E OT-223 OT-223 MMFT2955E/D 2955e equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261