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onsemi MMFT960T1 MOSFET N-CH 60V 300MA SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMFT960T1	Cut Tape			1	1 $1.05 10 $1.05 100 $1.05 1000 $1.05 10000 $1.05	Buy Now
Bristol Electronics	MMFT960T1		321			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MMFT960T1G MOSFET N-CH 60V 300MA SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMFT960T1G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	MMFT960T1G	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	MMFT960T1G	Digi-Reel			1	1 $0.6 10 $0.6 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
Bristol Electronics	MMFT960T1G		36			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MMFT960T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MMFT960T1		129			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MMFT960T1		208			1 $1.575 10 $1.575 100 $0.7875 1000 $0.7875 10000 $0.7875	Buy Now
	MMFT960T1		101			1 $0.95 10 $0.76 100 $0.57 1000 $0.57 10000 $0.57	Buy Now

MMFT960T1 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
MMFT960T1	Motorola	FET Transistor, Medium Power Field Effect Transistor N-Channel Enhancement-Mode	Original	PDF
MMFT960T1	Motorola	MEDIUM POWER TMOS FET 300 mA 60 VOLTS	Original	PDF
MMFT960T1	On Semiconductor	Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000	Original	PDF
MMFT960T1	On Semiconductor	Power MOSFET 300 mA, 60 Volts	Original	PDF
MMFT960T1	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 1000mA, 60V, Pkg Style SOT223	Scan	PDF
MMFT960T1/D	On Semiconductor	N-hannel Enhancement-ode Silicon Gate	Original	PDF
MMFT960T1-D	On Semiconductor	Power MOSFET 300 mA, 60 Volts N-Channel SOT-223	Original	PDF
MMFT960T1G	On Semiconductor	Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000	Original	PDF
MMFT960T1G	On Semiconductor	Power MOSFET 300 mA, 60 Volts	Original	PDF

MMFT960T1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FT960 Abstract: MMFT960T1 MMFT960T3 SMD310 Text: MOTOROLA Order this document by MMFT960T1/D SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for	Original	MMFT960T1/D MMFT960T1 FT960 MMFT960T1 MMFT960T3 SMD310	PDF
ft960 Abstract: MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223	Original	MMFT960T1 OT-223 OT-223 MMFT960T1/D ft960 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET	PDF
TSOP 48 thermal resistance Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72	PDF
Untitled Abstract: No abstract text available Text: MMFT960T1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)800m’ Minimum Operating Temp (øC)-65	Original	MMFT960T1	PDF
FT960 Abstract: ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223	Original	MMFT960T1 OT-223 OT-223 MMFT960T1/D FT960 ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET	PDF
Untitled Abstract: No abstract text available Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223	Original	MMFT960T1 MMFT960T1/D	PDF
FT960 Abstract: MMFT960T1 SMD310 Text: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223	Original	MMFT960T1 r14525 MMFT960T1/D FT960 MMFT960T1 SMD310	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
CS5170 Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .	Original	SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control	PDF
N-Channel JFET FETs Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are	Original	O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF

E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl	PDF
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S	PDF
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G	PDF
ft960 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching a pplications such as	OCR Scan	OT-223 MMFT960d MMFT960T1 ft960	PDF
FT960 Abstract: No abstract text available Text: MMFT960T1* M AXIM UM RATINGS T q = 25°C Unless O therw ise Noted Rating Symbol Value Unit V d SS 60 Volts Drain-to-Gate Voltage Vd g 60 Volts G ate-to-Source Voltage — C ontinuous VGS r 30 Volts Drain C urrent — C ontinuous — Pulsed 'D 'DM 1.0 2.0	OCR Scan	FT960 MMFT960T1* 318E-04, OT-223 O-261AA) MMFT960T1	PDF
sot223, 31 64 Abstract: No abstract text available Text: 1 MOTOROLA Order this document by m m fto o ti/d SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS	OCR Scan	OT-223 MMFT960T1/D sot223, 31 64	PDF
FT960 Abstract: No abstract text available Text: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	OCR Scan	MMFT960T1/D OT-223 FT960	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	MMFT960T1 OT-223 b3b7255	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	OT-223	PDF

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MMFT960T1 Price and Stock

onsemi MMFT960T1

onsemi MMFT960T1G

Motorola Semiconductor Products MMFT960T1

MMFT960T1 Datasheets (9)

MMFT960T1 Datasheets Context Search

FT960

ft960

TSOP 48 thermal resistance

Untitled

FT960

Untitled

FT960

MC68B21CP

transistor mosfet buv18a

BC337 BC547

schematic diagram atx Power supply 500w

CS5170

N-Channel JFET FETs

FSQ510 Equivalent

E3P102

BC517 spice model

MLED96

NTP2955G

ft960

FT960

sot223, 31 64

FT960

Untitled

Untitled