Untitled
Abstract: No abstract text available
Text: Pm37LV512 512 Kbit 64K X 8 Dual-Voltage Multiple-Cycle-Programmable ROM FEATURES • Low Power Consumption - Typical 5 mA active read current - Typical 18 µA CMOS standby current Low Voltage Operation - Dual read VCC ranges: 2.7 V to 3.6 V or 4.5 V to
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Pm37LV512
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39f010
Abstract: 39f020 39F040 PM39F010-70JC PM39F040 39f0 555H A103 A114 A115
Text: PMC Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time
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Pm39F010
Pm39F020
Pm39F040
Pm39F010:
Pm39F020:
Pm39F040:
39f010
39f020
39F040
PM39F010-70JC
PM39F040
39f0
555H
A103
A114
A115
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Untitled
Abstract: No abstract text available
Text: Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time
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Pm39F010
Pm39F020
Pm39F040
Pm39F010:
Pm39F020:
Pm39F040:
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pm25lv512
Abstract: No abstract text available
Text: PMC Pm25LV512 / Pm25LV010 512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES Block Write Protection - The Block Protect BP1, BP0 bits allow part or entire of the memory to be configured as read-only. Single Power Supply Operation
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Pm25LV512
Pm25LV010
Pm25LV512:
Pm25LV010:
Pm25LV512/010
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pm25lv512
Abstract: No abstract text available
Text: Pm25LV512 / Pm25LV010 512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz / 33 MHz SPI Bus Interface FEATURES Block Write Protection - The Block Protect BP1, BP0 bits allow part or entire of the memory to be configured as read-only. Single Power Supply Operation
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Pm25LV512
Pm25LV010
25MHz
33MHz
Pm25LV512:
Pm25LV010:
33MHz
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PM25LV020
Abstract: Pm25LV010
Text: PMC Pm25LV010 / 020 / 040 1 Mbit / 2 Mbit / 4 Mbit 3.0 Volt-only, Serial Flash Memory With 33 MHz SPI Bus Interface FEATURES Sector, Block or Chip Erase Operation - Typical 40 ms sector, block or chip erase Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V
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Pm25LV010
Pm25LV010:
Pm25LV020:
Pm25LV040:
208mil
33MHz
PM25LV020
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A103
Abstract: A104 EN60747-5-2 KTLP161G
Text: cosmo KTLP161G High Reliability Photocoupler UL 1577 File No.E169586 Features VDE EN60747-5-2 (File No.40009235) Outside Dimension:Unit ( m m ) 1. Opaque type, mini-flat package. 2. Subminiature type cosmo (The volume is smaller than that of our 6 1 G
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KTLP161G
E169586)
EN60747-5-2
2500Vrms)
Ta-25
A103
A104
EN60747-5-2
KTLP161G
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prior H101
Abstract: HDSP-A801 equivalent DPA801
Text: Whpì H E W LE TT m L'Hâ PACKARD Low Current Seven Segment Displays Technical D ata Features D escription • • • • These low current seven segment displays are designed for applications requiring low power consumption. They are tested and selected for their
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SP-3350,
SP-5551,
SP-7511,
HDSP-A101,
HDSP-A801,
HDSP-A901,
SP-E100,
DSP-F101,
DI-15
DE-15.
prior H101
HDSP-A801 equivalent
DPA801
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TC57H1025AD-70
Abstract: A-102 kcs2
Text: 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CM O S U .V . E R A SA B LE AN D E LE C T R IC A LLY P R O G R A M M A B LE REA D O N LY M EM O R Y DESCRIPTION The TC57H1025AD is a 65,536 word X 16 bit high speed CMOS ultraviolet lig h t erasable and electrically program m able read
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TC57H1025AD
60mA/lMHz
TC57H1025AD.
TC57H1025ADâ
WDIF40-G-600A
TC57H1025AD-70
A-102
kcs2
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Untitled
Abstract: No abstract text available
Text: 4,194,304 W O R D x PRELIMINARY 1 BIT D Y N A M I C R A M D E S C R IP T IO N The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC514100AF/AJ/ASJ/AZ
TC514100AP/AJ/ASJ/AZ
300/350mil)
TC514100AP/AJ/ASJ/AZ.
a512K
TC5141OOAP/AJ/ASJ/AZâ
TC514100AP/AJ/ASJ/AZ-80
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TDC1001
Abstract: 74LS04 ttl 1001b8c TDC1025 Marking A103 low noise TMC12441 SMD CAPACITOR CODE b7 SMD marking A67 LS161 TDC1038
Text: A /D Converters T R in i TRW offers a line o f high performance A /D converters that addresses applications from 50kHz to 100MHz. For video bandwidths on the order o f 10MHz , w e have converters with resolutions o f 4 to 10 bits and conversion rates from 18Msps to lOOMsps. W e pioneered the monolithic video A /D converter in 1977,
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50kHz
100MHz.
10MHz)
18Msps
THC1200
12-bit
THC1202)
THC1200,
1001B8A
TDC1001
74LS04 ttl
1001b8c
TDC1025
Marking A103 low noise
TMC12441
SMD CAPACITOR CODE b7
SMD marking A67
LS161
TDC1038
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced
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TC51V4400ASJL/AFTL80
TC51V
4400ASJL/AFTL
TC51V4400ASJL/AFTL
TC51V4400/
512KX4
QQE542fl
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sn10020
Abstract: A101 A801 A901 HDSP-335X HDSP-751X HDSP-A10X HDSP-A80X HDSP-A90X HDSP-K12X
Text: W EWLETT mL'hSÌ HM H PACKARD Low Current Seven Segment Displays Technical Data Features • Low Power Consumption • Industry Standard Size • Industry Standard Pinout • Choice of Character Size 7.6 mm 0.30 in , 10 mm (0.40 in), 10.9 mm (0.43 in), 14.2
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HDSP-335X
IEDSP-555X
HDSP-751X
HDSP-A10X
HDSP-A80X
HDSP-A90X
HDSP-K12X,
sn10020
A101
A801
A901
HDSP-K12X
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A-102
Abstract: TC57 TC57H1025AD-70 TC57h1025 A106 tvs A12o
Text: r t f'fTJoiriit’ r ii tf ln r î » TC57H1 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CMOS U.V. ERASABLE AND ELECTRICALLY PR O G RAM M A BLE READ ONLY M EM O RY DESCRIPTION T h e TC57H1025AD is a 65,536 word X 16 b it h ig h speed CMOS u ltra v io le t lig h t e rasa b le and
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TC57H1025AD
60mA/lMHz
TC57H1025AD.
TC57H1025ADâ
WDIF40-G-600A
A-102
TC57
TC57H1025AD-70
TC57h1025
A106 tvs
A12o
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pcb design seven segment display
Abstract: A101 A801 HDSP-751X HDSP-A90X HDSP-E10X HDSP-F10X HDSP-K12X ANOD01
Text: m Low Current Seven Segment Displays Technical Data F eatu res D escrip tion • • • • These low current seven segment displays are designed for applications requiring low power consumption. They are tested and selected for their excellent low current character
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HDSP-S35X
IIDSP-555X
HDSP-751X
IIDSP-A80X
HDSP-A90X
HDSP-E10X
HDSP-F10X
HDSP-K12X,
pcb design seven segment display
A101
A801
HDSP-K12X
ANOD01
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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chn 347
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF010
32-Pin
SST37VF010
chn 347
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF512
32-Pin
SST37VF512
pro-657-0204
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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Untitled
Abstract: No abstract text available
Text: 4 Megabit 512K x 8-Bit Multi-Purpose Flash SST39VF040Q Advance Information FEATURES: • Organized as 512 K x 8 • • Single 2.7-3.6V Read and Write Operations • • V • Superior Reliability - • Uniform 4 KByte sectors Block Erase Capability (8 blocks)
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SST39VF040Q
SST39VF040Q
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amd athlon II PIN LAYOUT voltage ground
Abstract: D-K7600M block diagram of amd Athlon II D-K7650M STPCLK amd athlon II PIN LAYOUT voltage ground 64 AMD Athlon II ddr ic a109
Text: aa/y/ttfonnati0n AMD Athl Processor Data Sheet AM DÎI 0557555 0 0 b 7170 m Preliminary Information 1999 Advanced Micro Devices, Inc A ll rights reserved. The contents of this docum ent are provided in connection w ith Advanced Micro D evices, Inc. “AM D” products. AMD m akes no representations or
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AMD-751TM
AMD-756TM
D257525
21016F/0--O
fi035
amd athlon II PIN LAYOUT voltage ground
D-K7600M
block diagram of amd Athlon II
D-K7650M
STPCLK
amd athlon II PIN LAYOUT voltage ground 64
AMD Athlon II
ddr ic a109
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Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
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SST39SF010
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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SST39VF400Q
Abstract: 39VF400
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400Q / SST39VF400 A dvance Inform ation FEATURES: • Organized as 256 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: • V ddq
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16-Bit)
SST39VF400Q
SST39VF400
SST39VF400Q
39VF400
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