Mali-400
Abstract: No abstract text available
Text: Allwinner Technology CO., Ltd. A13 User Manual V1.2 2013.01.08 A13 Allwinner Technology CO., Ltd. A13 Revision History Version Date Author V1.0 2012.04.16 Initial version V1.1 2012.10.25 Modify SDRAM/NAND module descriptions V1.2 2013.1.8 A13 User Manual V1.2
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Mali-400
Mali-400
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mpsa14
Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
Text: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)
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MPS-A131
MPS-A14
MPS-A65,
MPS-A66
T0-92A
MPS-A65
mps-a14
kps-a66
1500c
100mA
mpsa14
MPS-A13 pnp
MPSA65
Xl03
mpsa66
MPS-A13
MPS-A66
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2sk303
Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4
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2SA1256
2SA1343
2SA1655
2SK2167
2SK2168
2SK2170
2SK2171
2SK2260
2SK2218
2SK2219
2sk303
2SK283
sk184
SK174
2SK436
2SK848
P/N146071
2sd22
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DS87C520
Abstract: DS87C530
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 5/1/98 Subject: PRODUCT CHANGE NOTICE - D82202 Description: DS87C520 / DS87C530 revision change from A12 to A13
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D82202
DS87C520
DS87C530
actyywwA13,
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MPSA13M
Abstract: MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13
Text: MPS-A13 SILICON MPS-A14 NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for pre-amplifier input applications requiring high input impedance. • High D C Current Gain @ lc - 10 m A d c hFE = 5,000 (Min) M P S-A 1 3
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MPS-A13
MPS-A14
100/uAdc
MPSA13M
MPSA DARLINGTON
MPS-A13
MPS-A14
MPSA 13
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A14 marking SOT
Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices
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FMMT-A12
FIWIWT-A13
OT-23
FMMT-A13,
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
A14 marking SOT
A13 MARKING CODE
A12 marking
A12n
MARKING 3W SOT23
a13 marking sot23
marking code AD
transistor MARKING A12n
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MPS A13 transistor
Abstract: transistor mps 13 MPS-A13 MPS-A14 Transistor MPSA13 MPSA13
Text: Silicon r - 'x j Darlington Transistor M P S -A 1 3 M P S -A 1 4 The General Electric MPS-A13, A 14 are Silicon Planar Epi taxial Passivated NPN Darlington Transistors designed for preamplifier input applications where high impedance is a requirement. absolute maximum ratings: TA = 25°C unless otherwise sp
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MPS-A13
MPS-A14
MPS-A13,
10Vdc)
MPS A13 transistor
transistor mps 13
MPS-A14
Transistor MPSA13
MPSA13
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MPS-A13
Abstract: MPS-A14
Text: 111 E SOLID STATE 3875081 G E SOLID STATE DE~| 3ñ?5Qñl □ □IT'ifi? 1 01E 17987 D Signal Transistors MPS-A13, MPS-A14 T '¿< 7 « 2 7 Silicon Darlington Transistors TO-92 The GE/RCA M P S-A 13 and A14 are planar epitaxial passiva ted N PN silicon Darlington transistors designed for preampli
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017ciÃ
MPS-A13,
MPS-A14
CAMPS-A13andA14areplanarepitaxialpassiva-
MPS-A13
100kHz)
100kQ
MPS-A14
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1746-OW16
Abstract: 1746-Im16 1746-C9 1746-NO4I ULCS61ML5 1747-AIC 1746-A7 1746-P2 1746-P4 1746-C7
Text: ALLEN-BRADLEY SLC 500 Modular Chassis and Power Supplies Chassis Catalog Numbers: 1746-A4, -A7, -A10, and -A13 Power Supply Catalog Numbers: 1746-P1, -P2, -P3, -P4, and -P5 Product Data 88Ć213Ć19 88Ć213Ć39 SLC 500 modular chassis and power supplies provide flexibility in system
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500TM
1746-A4,
1746-P1,
10-slot,
13-slot
1746-OW16
1746-Im16
1746-C9
1746-NO4I
ULCS61ML5
1747-AIC
1746-A7
1746-P2
1746-P4
1746-C7
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EM51L256A-15J
Abstract: Etron Technology
Text: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5
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Em51L256A
28-Pin
300-mil
10ns/12ns/15ns
EM51L256A-15J
Etron Technology
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EM51M256A-15P
Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256
Text: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process
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Em51M256A
28-Pin
300-mil
10ns/12ns/15ns
004MAX
10MAX
EM51M256A-15P
Em51M256A-15
Etron
Etron Technology
ISB12
Em51m256
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EM51256C-15P
Abstract: em51256 Etron Technology EM51256C-10J
Text: EtronTech Em51256C 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5 5 24
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Em51256C
28-Pin
300-mil
10ns/12ns/15ns
EM51256C-15P
em51256
Etron Technology
EM51256C-10J
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MPSA13
Abstract: No abstract text available
Text: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .
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MPS-A15Â
MPS-A14
MPS-A66
MPS-A13
MPS-A14
mps-a65
mps-a66
1500c
100kHz
MPS-A13,
MPSA13
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27256 EPROM
Abstract: EVQV
Text: t 28 — A I2 — 2 27 — A7 — 3 2 6 -A13 V dd CMOS 32,768-Word by 8-Bit LSI Static ROM A6 — 4 25 -AS A9 — 9 24 -A 9 Features: A4 — 6 23 - AH A3 — 7 22 -O E /O E A2 — 8 21 -A IO 9 2 0 - 5 E /C E • A synchronous operation
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CDM53256
------A13
28-pin
CDM53256
92CM-3S216R1
27256 EPROM
EVQV
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A13 MARKING CODE
Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability
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TSC5802D
O-251
O-252
TSC5802DCH
TSC5802DCP
O-251
75pcs
A13 MARKING CODE
transistor a13
MARKING a13
A13 transistor
a13 marking transistor
diode MARKING CODE a13
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power transistor Ic 4A NPN to - 251
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability
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TSC5804D
O-251
O-252
TSC5804DCH
TSC5804DCP
O-251
75pcs
power transistor Ic 4A NPN to - 251
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN Transistor 450v 1A
transistor a13
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Untitled
Abstract: No abstract text available
Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer
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TS13005CK
O-126
TS13005CK
50pcs
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Transistor A14
Abstract: MMBTA14LT1 MMBTA13LT1
Text: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces
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MMBTA13/14LT1
100uA
100mA
100MHz
40x40x1
300us
MMBTA13LT1
MMBTA14LT1
Transistor A14
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Transistor A14
Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
Text: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage
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MMBTA13LT1/14LT1
100mA
100MHz
40x40x1
300us
MMBTA13LT1
MMBTA14LT1
Transistor A14
a14 Transistor
a13 marking transistor
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Transistor MPSA13
Abstract: mpsa14
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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MPSA13
MPSA14
MIL-STD-202,
100mA,
100mA
100MHz
300ms,
DS11111
Transistor MPSA13
mpsa14
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transistor a13
Abstract: MARKING WL MPSA13 MPSA14
Text: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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MPSA13
MPSA14
MIL-STD-202,
MPSA14
100mA,
100mA
100MHz
transistor a13
MARKING WL
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mpsa14
Abstract: No abstract text available
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic
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MPSA13
MPSA14
MIL-STD-202,
100mA,
100mA
100MHz
DS11111
mpsa14
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MPSA14
Abstract: MPSA13 impsa13
Text: 3IÌB5 MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages « -E -* TO-92 Mechanical Data_ • • •
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MPSA13
MPSA14
MIL-STD-202,
MPSA14
100mA,
100mA
100MHz
300ns,
impsa13
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Untitled
Abstract: No abstract text available
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,
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OCR Scan
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MPSA13
MPSA14
IL-STD-202,
100mA,
100mA
100MHz
300ns,
DS11111
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