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    k 117

    Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
    Text: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1


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    PDF BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCW35 BCY30A BCY31A T0532 BCY39A

    BUW52

    Abstract: LE17
    Text: 37E D S E M E L A B LTD A1331A7 DOODlIt SEMELAB BUW 52 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for high current, high speed, low voltage applications M EC H A N IC A L DATA Dimensions in mm FEATURES . l o w v ce sat • FAST SWITCHING • HIGH CURRENT


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    PDF c200V BUW52 LE17

    BUW91

    Abstract: 0DG02 LE17
    Text: SENELAB LTD 3 7E J UL 0 6 1988 A1331A7 D 5EMELAB BUW 91 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation M EC H A N IC A L DATA Dim ensionsin mm FEATURES • LOW VCE SAT


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    PDF 0DG020Ã BUW91 curre27f! 1003C 300ns BUW91 0DG02 LE17

    Untitled

    Abstract: No abstract text available
    Text: Reliability Polarity Option TVpe No. A1331A7 O Q O O O m 37E D SEMELAB LTD Package v CEO <C eont hF E @ v CE/fC »T Pd 2N2817 2N2818 2N2819 2N2820 2N2821 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T063 T063 T063 T063 T063 150 200 80 100 150 20


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    PDF A1331A7 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

    BAX65

    Abstract: BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106B BD107A
    Text: SEMELAB LTD 37E D • A1331A7 GODDQTfi 1 J S E M E L A B MANUFACTURING E ■c Polarity Package VCEO cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T05 T05 45 45 64 64 0.6 0.6 0.1 0.1 j i r / PNP PNP PNP PNP PNP T05 T05 T05 T05 T05 64 32 32 64 32 0.1


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    PDF BAX65 BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106AN BD106B BAX65 BCY34A BCY58 BCY59 BCY79 BD107A

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50


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    PDF A1331A7 000DQ24 2N5861 2N5864 2N5865 2N5867 2N5868 2N5869 2N5870 2N5871

    BUP34

    Abstract: LE17 900Volts
    Text: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob


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    PDF G00013M BUP34 O-220 100Voltsf 33-oi LE17 900Volts

    Untitled

    Abstract: No abstract text available
    Text: im ittl mi SEME IRFN150 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 k 3.5 ► i 1 3.5 1 3 ^D(cont) 3.0 R DS(on) ii r FEATURES i • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> r 100V 19A 0.070Q V DSS 0.25 • SMALL FOOTPRINT - EFFICIENT USE OF


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    PDF IRFN150 -220SM 300ms, A1331A7

    Untitled

    Abstract: No abstract text available
    Text: mi WM8024 SEME LAB Description WM8024 is a dual 8 bit voltage output digital to analogue converter DAC with buffered reference input (high impedance). WM8024 is guaranteed monotonie and is simple to use, running from a standard 5V supply. Digital interfacing to the WM8024 is via a simple 3 pin serial interface, and is CMOS/TTL and microprocessor


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    PDF WM8024 WM8024

    IRF9240SM

    Abstract: Scans-007819 t0220s
    Text: im IP P i llll SEME IRF9240SM LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 V DSS 0.25 -8 A ^D(cont) 3.0 3.5 -2 0 0 V vr 0.051 n ^DS(on) irt"— *— FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF


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    PDF IRF9240SM -200V T0-220SM -100A/ 300ms, DDD1504 IRF9240SM Scans-007819 t0220s

    BFC61

    Abstract: 139 LM DIODE
    Text: Mil i t t l mi SEME BFC61 LAB 4TH GENERATION MOSFET T0220-AC Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 'DSS I D(cont) ^DS(on) Pin 1 — Gate Pin 2 — Drain 1000V 3.6A 4.00A Pin 3 — Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)


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    PDF BFC61 T0220-AC MIL-STD-750 BFC61 139 LM DIODE