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    A14.A PACKAGE Search Results

    A14.A PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    A14.A PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A14.A Package Intersil 14 LEAD CERAMIC FRIT SEAL CERPACK PACKAGE Original PDF

    A14.A PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "ceramic frit"

    Abstract: A14A dip 28 dimension A14.A Package
    Text: Ceramic Package Ceramic Frit Seal Cerpack Packages Cerpack A14.A k 14 LEAD CERAMIC FRIT SEAL CERPACK PACKAGE INCHES e D1 A A b E1 Q E A C L c1 LEAD FINISH SYMBOL MIN MAX MIN MAX NOTES A - 0.085 - 2.16 - b 0.013 0.020 0.33 0.51 4 b1 0.013 0.017 0.33 0.43


    Original     		PDF 038mm) "ceramic frit" A14A dip 28 dimension A14.A Package

    Untitled

    Abstract: No abstract text available
    Text: Package outline HLQFN78R: plastic thermal enhanced low profile quad flat package; no leads; 78 terminals; resin based; body 12 x 12 x 1.15 mm B D SOT967-1 A terminal 1 index area E A detail X e1 eR L1 L D2 A14 v w b e A26 B10 D3 A13 M M C C A B C y1 C y A27


    Original     		PDF HLQFN78R: OT967-1

    Untitled

    Abstract: No abstract text available
    Text: Plastic Packages for Integrated Circuits Package Outline Drawing C69.5x5B 69 LEAD aQFN 5X5 PACKAGE WITH 0.40 PITCH Rev 1, 12/12 MILLIMETER A D B A A2 C PIN 1 CORNER C A1 E eee C C A10 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 B6 B7 B8 B9 B10 B11 B12 B13 B14


    Original     		PDF

    w68101

    Abstract: No abstract text available
    Text: W6810 SINGLE CHANNEL VOICEBAND CODEC Data Sheet Revision A14 -1- W6810 1. GENERAL DESCRIPTION The W6810 is a general-purpose single channel PCM CODEC with pin-selectable -Law or A-Law companding. The device is compliant with the ITU G.712 specification. It operates off of a single +5V


    Original     		PDF W6810 W6810 20-pin w68101

    LN5061

    Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
    Text: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­ VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT


    OCR Scan     		PDF 1N5059 1N5060 400Mm. LN5061 A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060

    in5062

    Abstract: A14P
    Text: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­


    OCR Scan     		PDF 1N5059 1N5060ion in5062 A14P

    1N5061

    Abstract: A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N
    Text: 7294621 POWEREX INC 74 I ieT J 7 5 1 4 1 ,2 1 T- °i~i3 DÜÜ1351 Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­


    OCR Scan     		PDF DDOiaa11] 270Mm 1N5061 A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N

    MPS-A13

    Abstract: MPS-A14
    Text: 111 E SOLID STATE 3875081 G E SOLID STATE DE~| 3ñ?5Qñl □ □IT'ifi? 1 01E 17987 D Signal Transistors MPS-A13, MPS-A14 T '¿< 7 « 2 7 Silicon Darlington Transistors TO-92 The GE/RCA M P S-A 13 and A14 are planar epitaxial passiva­ ted N PN silicon Darlington transistors designed for preampli­


    OCR Scan     		PDF 017cià MPS-A13, MPS-A14 CAMPS-A13andA14areplanarepitaxialpassiva- MPS-A13 100kHz) 100kQ MPS-A14

    LTC1040CN

    Abstract: LTC1040
    Text: S.O. PACKAGE UPDATE fjvrm. LTC1040CS TECHNOLOGY SPECIFICATION NOTICE =3V+ STROBE d - 1Vpp ON/ÖFF I— A+B I— = 3 OSC Août I_ = 3 Bout A14"I " Ü Part Number LTC1040CS Temo.Banae -40°<Ta<+85°C = □ B1 + A 1 -C = ZZ3B 1- A 2+C = . 1B2+ A2- c m


    OCR Scan     		PDF LTC1040CS LTC1040CN, LTC1040 12/92the LTC1040CN

    Untitled

    Abstract: No abstract text available
    Text: ELPAQ EMS256K8B A division of ELMO Semiconductor 35 - 55ns 2Mb CMOS STATIC SRAM FEATURES Pin Configuration High density SRAM module wc Organized as 262,144 x 8 A16 c Access time 35 - 55ns A12 A14 A7 Low power consumption


    OCR Scan     		PDF EMS256K8B 100yW 325mW

    DS1245V

    Abstract: No abstract text available
    Text: DS 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC 1 1 A16 A14 • DIP-package devices directly replace 128K x 8 vola­


    OCR Scan     		PDF 1245Y/A 1024K DS1245Y/AB DS1245Y) Hbl413D DS1245YL/ABL 34-PIN 68-pin 34P-SM DS1245V

    27C510

    Abstract: pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers
    Text: SMLS510A-AUGUST1990-REVISED JANUARY 1993 J AND N PACKAGESÎ {TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply 30 ] NC A 12[ 4 29 ] A14 A 7[ 5 28 ] A13 A 6f 6 27 ] A 8 A 5f 7 26 ] A9 A 4[ 8 25 ] A11 A 3f 9 A 2[ 10 24 ] G A 1 [ 11 AOf 12 22 ] È


    OCR Scan     		PDF TMS27C510 288-BIT TMS27PC510 SMLS510A-AUGUST1990-REVISED 27C510-12 27C/PC510-15 27C/PC510-17 27C/PC510-20 27C/PC510-25 27C510 pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers

    Untitled

    Abstract: No abstract text available
    Text: D S 1647/D S 1S 47P PHELlMiNARY f iA I • A C - Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT DS1647/DS1647P A I6 B 2 A14 §3 A l2 • Clock registers are accessed identical to the static RAM. These registers are resident In the eight top RAM locations.


    OCR Scan     		PDF 1647/D DS1647/DS1647P DS1647/DS1847P DS1847P DS9034PCX DS1647/DS

    1230Y

    Abstract: No abstract text available
    Text: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile


    OCR Scan     		PDF 1230Y/A DS1230Y/AB DS1230Y) DS1230AB) 2bl4130 013S3t S1230Y/AB DS1230YL/ABL 34-PIN DS34P 1230Y

    Untitled

    Abstract: No abstract text available
    Text: OS 1646/D S1646P E^A lLL SEMICONDUCTOR DS1646/DS1646P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, powerfail control circuit and lithium energy source NC 1 A16 1 A14 1 • Clock registers are accessed identical to the static


    OCR Scan     		PDF 1646/D S1646P DS1646/DS1646P DS164XP DS9034PCX DS1646-XXX 32-pin A0-A16 DS1646P-XXX 34-pin

    Untitled

    Abstract: No abstract text available
    Text: D S 1 2 4 9 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1249Y/AB 2048K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power k NC A ie • Data is automatically protected during power loss 1 A14 1 • Unlimited write cycles


    OCR Scan     		PDF DS1249Y/AB 2048K DS1249Y) DS1249AB) DS1249 152-bit,

    Untitled

    Abstract: No abstract text available
    Text: D S 1245Y/A B DALLAS SEMICONDUCTOR DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM NC ta 1 32 1 A16 I2 31 1 A14 A12 • Unlimited write cycles


    OCR Scan     		PDF 1245Y/A DS1245Y/AB 1024K 32-pin DS1245Y/AB 32-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1647/DS1647LPM P R E L IM IN A R Y DS1647/DS1647LPM DALLAS SEMICONDUCTOR Nonvolatile Timekeeping RAM PIN ASSIGNMENT FEATURES • Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source - 3 2 1 V cc 311 A15 A14 | 3


    OCR Scan     		PDF DS1647/DS1647LPM 68-pin 32-PIN DS1647LPM 34-PIN 34P-SM

    1245Y

    Abstract: No abstract text available
    Text: DS 1245Y/A B DALLAS SEMICONDUCTOR FEATURES DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT I 1 A14 • Data is automatically protected during power loss I 1 1 32 1 2 3 31 • Unlimited write cycles • Low-power CMOS • Full ±10% Vqc operating range DS1245Y


    OCR Scan     		PDF 1245Y/A Replaces128K DS1245Y/AB 1024K appli025 34-PIN 1245Y

    34-PIN

    Abstract: DS1345 DS1345W DS9034PC
    Text: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8


    OCR Scan     		PDF DS1345W 1024K 128Kx 34-PIN DS1345 DS1345W DS9034PC

    DALLAS SEMICONDUCTOR Ds1230

    Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
    Text: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1


    OCR Scan     		PDF DS1230 DS1230Y/AB DS1230Y) DS1230AB) 28-pin 2bl4130 DS1230YL/ABL 34-PIN 68-pin DALLAS SEMICONDUCTOR Ds1230 dallas ds1230 EEPROM 28256 1230Y DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS

    IN4247

    Abstract: IN4248 IN4245 IN4249 IN4246 a14s 1N4245 1N4246 1N4247 1N4305
    Text: 74C 01327 7294621 POWEREX INC ~7M » Ë ~ | 7 5 ,m b a i oDDiaa? 3 D 1N4305 SEE PAG E 229 Passivated IN4245 IN4246 IN4247 IN4248 IN4249 Rectifier TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE G E N E R A L ELECTRIC 1N4245-49 SE R IE S A R E A14 TYPES, 2.5 AMPERE


    OCR Scan     		PDF 75iMbai 1N4305 1N4245-49 270Mm 400Mm. IN4247 IN4248 IN4245 IN4249 IN4246 a14s 1N4245 1N4246 1N4247

    Untitled

    Abstract: No abstract text available
    Text: DS1350Y/AB m a l i a DS1350Y/AB 4096K Nonvolatile SRAM w j^ Battery Monitor a U A LLA 3 SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 AO • Data is automatically protected during power loss


    OCR Scan     		PDF DS1350Y/AB DS1350Y/AB 4096K DS1350Y) 34-PIN

    LC124

    Abstract: No abstract text available
    Text: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ


    OCR Scan     		PDF LH28F004SU-LC LH28F004SU -40-pin, TSOP040-P-1020) LH28F004SUT-LC15 40-pin LC124