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    A170 VS Search Results

    A170 VS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    OPA170TDA2 Texas Instruments Single-Supply, Low-Power Operational Amplifier 0- 25 Only Visit Texas Instruments
    INA170EA/250 Texas Instruments 60V, High-Side, Bi-Directional, High-Speed, Current Output Current Sense Amplifier 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    OPA170AIDRLR Texas Instruments 36V, microPower, Rail-to-Rail Output, General Purpose Op Amp in MicroPackages 5-SOT-5X3 -40 to 125 Visit Texas Instruments Buy
    INA170EA/2K5 Texas Instruments 60V, High-Side, Bi-Directional, High-Speed, Current Output Current Sense Amplifier 8-VSSOP -40 to 85 Visit Texas Instruments Buy
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    A170 VS Price and Stock

    Amphenol Corporation HVSL1000062A170

    Automotive Connectors 10MM HVSL1000 ST PLG 2 WAY W/HVIL- A COD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HVSL1000062A170 137
    • 1 $90.83
    • 10 $83.36
    • 100 $73.23
    • 1000 $73.23
    • 10000 $73.23
    		Buy Now

    Amphenol Corporation HVSL1000082A170

    Automotive Connectors 10MM HVSL1000 RA PLG 2 WAY W/HVIL- A COD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HVSL1000082A170 78
    • 1 $136.25
    • 10 $125.05
    • 100 $116.22
    • 1000 $116.22
    • 10000 $116.22
    		Buy Now

    Amphenol Corporation HVSL1200082A170

    Automotive Connectors 70mm 2 contact A coding RA plug
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HVSL1200082A170 30
    • 1 $152.35
    • 10 $141.94
    • 100 $129.94
    • 1000 $129.94
    • 10000 $129.94
    		Buy Now

    Amphenol Corporation HVSL1000022A170

    Automotive Connectors 10MM HVSL1000 BM REC 2 WAY W/HVIL- A COD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HVSL1000022A170 12
    • 1 $46.21
    • 10 $40.01
    • 100 $35.14
    • 1000 $35.14
    • 10000 $35.14
    		Buy Now

    Amphenol Corporation HVSL1200062A170

    Automotive Connectors 70mm 2 contact A coding strt plug
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HVSL1200062A170 1
    • 1 $102.5
    • 10 $94.07
    • 100 $87.43
    • 1000 $87.43
    • 10000 $87.43
    		Buy Now
    Find more A170 VS price and stock on Findchips.com

    A170 VS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: biME D • 7ET4b21 □ □□bc!3fl 53b H P R X A170 R Powerex, Inc., 200 HHIIs Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POülEREX INC SHÎCO/l R&Ctifî&r


    OCR Scan     		7ET4b21 BP107, 72T4b51 00Gb241 PDF

    a1870

    Abstract: 1N5162 A187A 1N3261 1N3262 A170A A177 A180 A180A A187
    Text: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE 1N3289-96 GE TYPE SPECIFICATIONS •f A170 A177 - A 180 A 187 A V operation) 100 100 100 160 150 150 T c = <°C> 130 130 130 125 143 110 Max. average fo rw a rd cu rre n t (1 phase m 1N3260-75 A70 V RM (surge)


    OCR Scan     		1N3289-96 IN3260-75 A170A 1N3261 A180A A187A 1N3262 1N3289 A170B A177B a1870 1N5162 A187A A177 A180 A187 PDF

    BP107

    Abstract: A170 A170PM hi voltage rectifier 50 amperes
    Text: A _ A170 R Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 SUiCOfì ROCtÌfÌGr ^ q q A m p e re s A v e ra g e


    OCR Scan     		BP107, TEMPERATURE-200 BP107 A170 A170PM hi voltage rectifier 50 amperes PDF

    A180P

    Abstract: a1870 GE a70b a170 VS A177M 1N3261 1N3262 A170A A170M A180
    Text: RECTIFIERS 100 TO 150 AMPERES 1N3289-96 JIE DEC T Y P E 1N3260-75 GE T Y P E A70 A170 A177 - A180 A187 SPEC IFICATIO N S Max. average forward current 1 phase •f m ( A V operation) 100 100 100 160 150 150 130 130 130 125 143 110 T c = <°C> V RM (surge)


    OCR Scan     		1N3289-96 IN3260-75 A170A 1N3261 A180A A187A 1N3262 1N3289 A170B A177B A180P a1870 GE a70b a170 VS A177M A170M A180 PDF

    Burndy penetrox

    Abstract: Burndy penetrox A penetrox a70p penetrox A 1N3290R a1870 A187E ge 1n3289 1N3261
    Text: RECTIFIERS 100 TO 150 AMPERES JIE DEC TYPE 1N 3 2 8 9 -9 6 1 N 3 2 6 0 -7 5 A70 A170 A177 - A180 A187 A V operation) 100 100 100 160 150 150 T c = <°C> 130 130 130 125 143 110 GE TYPE SP E C IF IC A T IO N S •f Max. average forward current (1 phase


    OCR Scan     		1N3289-96 IN3260-75 A170A 1N3261 A180A A187A 1N3262 1N3289 A170B A177B Burndy penetrox Burndy penetrox A penetrox a70p penetrox A 1N3290R a1870 A187E ge 1n3289 PDF

    AS 15 -g

    Abstract: WED8L24257V
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL AS 15 -g PDF

    a1870

    Abstract: A137N 1N3261 1N3262 A170A A177 A180 A180A A187 A187A
    Text: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 « 900 600 700 § 500 s 400 5 300 § 200 ! j 600 z H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 3 0 100 140 2 5 0 4 0 0 75 0 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 3000


    OCR Scan     		1N3289-96 IN3260-75 a1870 A137N 1N3261 1N3262 A170A A177 A180 A180A A187 A187A PDF

    WED8L24257V

    Abstract: DSP5630X
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X PDF

    Untitled

    Abstract: No abstract text available
    Text: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with


    Original     		W49F020 12-volt pro200336 PDF

    W49L401

    Abstract: W49L401T
    Text: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP


    Original     		W49L401 12-volt ope798 W49L401T PDF

    Untitled

    Abstract: No abstract text available
    Text: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with


    Original     		W49F020 12-volt PDF

    winbond w49f002up12b

    Abstract: W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U W49F002U
    Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations


    Original     		W49F002U W49F002U 12-volt winbond w49f002up12b W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U PDF

    W49F020T

    Abstract: W49F020
    Text: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with


    Original     		W49F020 W49F020 12-volt t21-62365999 W49F020T PDF

    W49F002A-12

    Abstract: ortec 142 W49F002A ortec 533
    Text: Preliminary W49F002A 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002A is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


    Original     		W49F002A W49F002A 12-volt W49F002A-12 ortec 142 ortec 533 PDF

    tpec

    Abstract: XX555 W49L401 W49L401T
    Text: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP


    Original     		W49L401 12-volt tpec XX555 W49L401T PDF

    w49f002up12b

    Abstract: W49F002U-12B W49F002U
    Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations


    Original     		W49F002U W49F002U 12-volt w49f002up12b W49F002U-12B PDF

    W29F002

    Abstract: W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B
    Text: Preliminary W49F002/B/U/N 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002/B/U/N is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt


    Original     		W49F002/B/U/N W49F002/B/U/N 12-volt W29F002 W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B PDF

    W29F020

    Abstract: W49F020 W49F020-70 W49F020-90
    Text: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not


    Original     		W49F020 W49F020 12-volt W29F020 W49F020-70 W49F020-90 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


    Original     		W49F002U 12-volt PDF

    W49F002U12BN

    Abstract: W49F002U w49f002up12b W49F002UP W49F002UP12N W49F002U90BN W49F002U-12B
    Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations


    Original     		W49F002U W49F002U 12-volt W49F002U12BN w49f002up12b W49F002UP W49F002UP12N W49F002U90BN W49F002U-12B PDF

    W49F002U12BN

    Abstract: W49F002UP12Z winbond w49f002up12b W49F002U-12BN W49F002U90BN W49F002U-12B W49F002UP12B
    Text: W49F002U Data Sheet 256K x 8 CMOS FLASH MEMORY Table of Content1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 3 FEATURES . 3


    Original     		W49F002U W49F002U12BN W49F002UP12Z winbond w49f002up12b W49F002U-12BN W49F002U90BN W49F002U-12B W49F002UP12B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM22LD16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features Functional Overview • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		FM22LD16 151-year 25-ns 55-ns 110-ns PDF

    SST31LF021E

    Abstract: 32-PIN
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LF021E Advance Information FEATURES: • Organized as 256K x8 Flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • • Flash Fast Erase and Byte-Program:


    Original     		SST31LF021E 32-Pin MO-142 SST31LF021E PDF

    SST31LF021

    Abstract: SST31LF021E
    Text: 2 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF021 / SST31LF021E SST31LF021 / 021E2Mb Flash x8 + 1Mb SRAM (x8) Monolithic ComboMemories Data Sheet FEATURES: • Monolithic Flash + SRAM ComboMemory – SST31LF021/021E: 256K x8 Flash + 128K x8 SRAM • Single 3.0-3.6V Read and Write Operations


    Original     		SST31LF021 SST31LF021E 021E2Mb SST31LF021/021E: MO-142 32-LEAD 32-tsop-WH-7 S71137-03-000 SST31LF021E PDF