A17A
Abstract: HM62V8100I a4 096 HM62V8100
Text: HM62V8100I Series Block Diagram TSOP LSB A5 A6 A7 A4 A3 A9 A10 A11 A12 A13 MSB A14 V CC V SS • • • • • Row decoder I/O0 Memory matrix 2,048 x 4,096 Column I/O • • Input data control • • Column decoder I/O7 LSB MSB A16 A17A18 A19 A0 A1 A2 A15A8
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HM62V8100I
A17A18
A15A8
A5A0A19
A17A
a4 096
HM62V8100
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A17A
Abstract: tsop datasheet diode a3 TSOP
Text: HM628100I Series Block Diagram TSOP LSB A5 A6 A7 A4 A3 A9 A10 A11 A12 A13 MSB A14 V CC V SS • • • • • Row decoder I/O0 Memory matrix 2,048 x 4,096 Column I/O • • Input data control Column decoder I/O7 LSB MSB A16 A17A18 A19 A0 A1 A2 A15A8 •
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HM628100I
A17A18
A15A8
A17A
tsop datasheet
diode a3
TSOP
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HM628100LTTI-5SL
Abstract: A17a
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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BU-61843
Abstract: No abstract text available
Text: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE/µ-ACE MICRO-ACE ] FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)
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BU-6174X/6184X/6186X
553A/B
MIL-STD-1553
bu482
1-800-DDC-5757
A5976
G1-01/02-0
BU-61843
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LX50CM4128
Abstract: linvex technology
Text: LINVEX TECHNOLOGY, CORP. LX50CM4128 512K x 8 Bit ROM and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • Both ROM and RAM in one chip • Wide Operating Voltage Range: 1.8 - 3.3V • Fast Access Time 1.8 V Operation: 500 ns Max.
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LX50CM4128
LX50CM4128
A0-A18
A0-A16
linvex technology
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Untitled
Abstract: No abstract text available
Text: LINVEX TECHNOLOGY, CORP. PRELIMINARY LX59CF4128 512K x 8 Bit FLASH and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF4128 is a combination memory chip consist of 4M-bit FLASH Memory organized as 512K words by 8 bits and a 1-Meg-bit Static
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LX59CF4128
LX59CF4128
40-pin
A0-A18
A0-A16
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BU-61843
Abstract: No abstract text available
Text: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE/µ-ACE MICRO-ACE ] FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)
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BU-6174X/6184X/6186X
553A/B
MIL-STD-1553
bu16-2482
1-800-DDC-5757
A5976
M-12/04-0
BU-61843
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BU-64843X
Abstract: BU-64843H MN-6186X-002 MILSTD-1773 BU-64843T Mini-ACE Users Guide J-11-J1 MIL-STD-1773 MN-6186X-001 BU-64843
Text: Make sure the next Card you purchase has. BU-64843X/64863X TOTAL-ACE COMPLETE MIL-STD-1553 SOLUTION DATA SHEET FEATURES • World's First, Fully Integrated, MIL-STD-1553 Terminal & Transformer Solution • Small Package 312 Ball BGA 1.1 in x 0.6 in or 1.1 in x 0.7 in
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BU-64843X/64863X
MIL-STD-1553
BU-64843T
BU-64843X
BU-64843H
MN-6186X-002
MILSTD-1773
Mini-ACE Users Guide
J-11-J1
MIL-STD-1773
MN-6186X-001
BU-64843
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dss-1005 bu6484
Abstract: dss-1003 bu64863
Text: Make sure the next Card you purchase has. BU-6474X/6484X/6486X Mini-ACE Mark3/Micro-ACE®*-TE ® FEATURES • Fully Integrated 3.3 or 5.0 Volt, 1553 A/B Notice 2 Terminal • World’s First all 3.3 Volt Terminal • Transceiver Power-Down Options • World’s Smallest CQFP MIL-STD-1553
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BU-6474X/6484X/6486X
MIL-STD-1553
80-pin
324-Ball
MIL-STD1553
1-800-DDC-5757
A5976
N-10/07-0
dss-1005 bu6484
dss-1003
bu64863
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BU-61860B
Abstract: BU-61843 bu 61865 BU-61743
Text: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE /µ-ACE MICRO-ACE® ] ® FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)
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BU-6174X/6184X/6186X
553A/B
MIL-STD-1553
1553ion
1-800-DDC-5757
A5976
BU-61860B
BU-61843
bu 61865
BU-61743
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BU-64863B
Abstract: bu64863 BU-64840B3-E02 DSS-3330 mark s07 BU-61860 BU-64863E8
Text: Make sure the next Card you purchase has. BU-6474X/6484X/6486X MINI-ACE MARK3/MICRO-ACE®*-TE ® FEATURES • Fully Integrated 3.3 or 5.0 Volt, 1553 A/B Notice 2 Terminal • World’s First all 3.3 Volt Terminal • Transceiver Power-Down Options • World’s Smallest CQFP MIL-STD-1553
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BU-6474X/6484X/6486X
MIL-STD-1553
80-pin
324-Ball
J-STD-020
BU-64XXXXC/D)
BU-64863B
bu64863
BU-64840B3-E02
DSS-3330
mark s07
BU-61860
BU-64863E8
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EM680FU16
Abstract: No abstract text available
Text: merging Memory & Logic Solutions Inc. EM680FU16 Series Low Power, 512Kx16 SRAM Document Title 512K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft April 12 , 2002 0.1 2’nd Draft Changed Icc, Icc1 value &
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EM680FU16
512Kx16
100ns
120ns
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8 pin ceramic dip microsemi
Abstract: No abstract text available
Text: WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES Automatic Page Write Operation Read Access Times of 150, 200, 250, 300ns • Internal Address and Data Latches for JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
MIL-STD-883
Typical/100mA
8 pin ceramic dip microsemi
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interrupt service in embedded system
Abstract: am29f016 AD0-AD15 AM29F010 Am186ES
Text: Breaking Through the 1 MByte Address Barrier Using the Am186ES Microcontroller The x86 architecture has come to dominate the microprocessor landscape as the most successful architecture in the world. The 186 is the 16-bit microcontroller version of the x86 architecture and it has had similar success in the 16-bit
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Am186ES
16-bit
16-bit
Am186,
Am188,
interrupt service in embedded system
am29f016
AD0-AD15
AM29F010
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EDI8F8512C
Abstract: EDI8F8512LP EDI8F8512LP100B6C A17-A18
Text: EDI8F8512C White Electronic Designs 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION 512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.
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EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
256Kx4
100ns
the128Kx8
256Kx4
EDI8F8512LP
EDI8F8512LP100B6C
A17-A18
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Untitled
Abstract: No abstract text available
Text: 512K x 8 SRAM MODULE SYS8512FKX-70/85/10/12 Issue 5.0: November 1999 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Features Description The SYS8512FKX is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line package
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SYS8512FKX-70/85/10/12
SYS8512FKX
S8512FKXLI-10
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128kx8 eeprom
Abstract: No abstract text available
Text: WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES Automatic Page Write Operation Read Access Times of 150, 200, 250, 300ns • Internal Address and Data Latches for JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
MIL-STD-883
128kx8 eeprom
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Untitled
Abstract: No abstract text available
Text: Make sure the next Card you purchase has. BU-6474X/6484X/6486X MINI-ACE MARK3/MICRO-ACE®*-TE TM ® FEATURES • Fully Integrated 3.3 or 5.0 Volt, 1553 A/B Notice 2 Terminal • World’s First all 3.3 Volt Terminal • Transceiver Power-Down Options • World’s Smallest CQFP MIL-STD-1553
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BU-6474X/6484X/6486X
MIL-STD-1553
80-pin
324-Ball
BU-64840B3-E02â
BU-64840B
3-E02.
MIL-STD-1553
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EDI8F8512C
Abstract: EDI8F8512LP
Text: EDI8F8512C 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION 512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate. Random Access Memory
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EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
256Kx4
100ns
the128Kx8
256Kx4
EDI8F8512LP
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Untitled
Abstract: No abstract text available
Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
3E30114
EDI7F8512C120BSC
EDI7F8512C150BSC
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Untitled
Abstract: No abstract text available
Text: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
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smd A7t
Abstract: smd code A7t
Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
smd A7t
smd code A7t
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3B1065
Abstract: 34X2245 s34x245 34X245
Text: QS34X245Q3, QS34X2245 PRELIMINARY Q High-Speed CMOS QUICkSwitCh Qs34X245q3 QS34X2245Q3 32-Bit MultiWidth Bus Switches FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • • • The QS34X245 is a member of the MultiWidth™ family of QuickSwitch devices and provides a set of
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QS34X245Q3,
QS34X2245
s34X245q3
QS34X2245Q3
32-Bit
QS34X245
MDSL-00117-02
3B1065
34X2245
s34x245
34X245
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Untitled
Abstract: No abstract text available
Text: _ EDI7F32512C m m ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 512Kx32 CMOS Flash EEPROM Module Features The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit CMOS Flash and Erasable Read Only Memory Module. Organized as Electrically Erasable Programmable
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EDI7F32512C
512Kx32
EDI7F32512C
512Kx8
EDI7F32512C120BMC
EDI7F32512C150BMC
EDI7F32512C200BMC
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