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    A19-300 425 Search Results

    A19-300 425 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BT412

    Abstract: BB48 1334 A31 BH292 BK276 BK377 BL301
    Text: CASE STYLES OUTLINE DIMENSIONS inch mm case no. B C D E F G H J K BB48 .50 12.70 .39 9.91 .225 5.72 .025 0.63 .07 1.78 .100 2.54 .250 6.35 .350 8.89 .06 1.52 .31 7.87 3.0 A1, E1 BG 291 BG 419 BH292 BJ293 BJ360 BJ398 BK276 . BK 343 BK377 BL301 BL372 BN333


    Original     		PDF BH292 BJ293 BJ360 BJ398 BK276 BK343 BK377 BL301 BL372 BN333 BT412 BB48 1334 A31 BH292 BK276 BK377 BL301

    PSD302

    Abstract: PSD303 PSD311 waferscale psd3xx PSD301 PSD304R PSD311 PSD312 PSD313 PSD314R
    Text: Programmable Peripheral PSD3XX Family Field-Programmable Microcontroller Peripheral Key Features ❏ Single Chip Programmable Peripheral for Microcontroller-based Applications ❏ Wide Operating Voltage Range — L-Versions: 3.0 to 5.5 volts — Others: 4.5 to 5.5 volts


    Original     		PDF

    IS49NLC96400

    Abstract: No abstract text available
    Text: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz


    Original     		PDF IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 533MHz 533MHz) 144ball)

    IS49NLC36160-18BL

    Abstract: FBGA144 IS49NLC96400
    Text: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz


    Original     		PDF IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 533MHz 533MHz) 144ball) IS49NLC36160-18BL FBGA144

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx

    GS4576C36GL-24I

    Abstract: GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I
    Text: GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 576Mb 067Gb/s/pin 4576Cxx GS4576C36GL-24I GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I

    LLDRAM

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx LLDRAM

    576mb

    Abstract: delta A221 J2/GS4576C09GL-24I
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx 576mb delta A221 J2/GS4576C09GL-24I

    J2/GS4576C09GL-24I

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 576Mb 4576Cxx J2/GS4576C09GL-24I

    J2/GS4576C09GL-24I

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx J2/GS4576C09GL-24I

    DK97

    Abstract: RLDRAM J2/GS4576C09GL-24I
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 576Mb 4576Cxx DK97 RLDRAM J2/GS4576C09GL-24I

    J2/GS4576C09GL-24I

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball µBGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 576Mb 067Gb/s/pin 4576Cxx J2/GS4576C09GL-24I

    LLDRAM

    Abstract: 144BallBGA A212 A221 ba2163 J2/GS4576C09GL-24I
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 576Mb 067Gb/s/pin 4576Cxx LLDRAM 144BallBGA A212 A221 ba2163 J2/GS4576C09GL-24I

    J2/GS4576C09GL-24I

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx J2/GS4576C09GL-24I

    IS49NLS18320

    Abstract: No abstract text available
    Text: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at


    Original     		PDF IS49NLS96400 IS49NLS18320 576Mb 533MHz 533MHz) IS49NLS1832025BLI IS49NLS9640033BI IS49NLS9640033BLI IS49NLS1832033BI IS49NLS1832033BLI IS49NLS18320

    IS49NLC96400

    Abstract: No abstract text available
    Text: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz


    Original     		PDF IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 533MHz 533MHz) 144-ball)

    IS49NLC96400

    Abstract: No abstract text available
    Text: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)


    Original     		PDF IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 400MHz 800Mb/s/pin 400MHz) IS49NLC96400-5BLI IS49NLC36160-33BLI IS49NLC18320-5BI

    issi 935

    Abstract: DK QK BA1 K11 33bl IS49NLC96400
    Text: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)


    Original     		PDF IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 400MHz 800Mb/s/pin 400MHz) 144-ball lead20-25BLI issi 935 DK QK BA1 K11 33bl

    29LV008

    Abstract: AM29LV008 flash am29lv008B PAL PATTERN GENERATOR SA10 SA11
    Text: PRELIMINARY Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements ■ Compatibility with JEDEC standards


    Original     		PDF Am29LV008T/Am29LV008B 40-pin 16-038-TSOP-1 TSR040 Am29LV008 29LV008 flash am29lv008B PAL PATTERN GENERATOR SA10 SA11

    M1017

    Abstract: IS49NLS18160
    Text: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at


    Original     		PDF IS49NLS93200 IS49NLS18160 288Mb 533MHz 533MHz) IS49NLS1816025BLI IS49NLS9320033BI IS49NLS9320033BLI IS49NLS1816033BI IS49NLS1816033BLI M1017 IS49NLS18160

    BC25 327

    Abstract: AF3 din 74 j29 p190 U28 726 IO464 BC25 328 547 B34 R3E28 AH36 AE31
    Text: XC4000XLA/XV Field Programmable Gate Arrays January 28, 1999 Version 1.0 0* R XC4000XLA/XV Field Programmable Gate Arrays XC4000XV Family Field Programmable Gate Arrays Package Pinouts XC40110XV Pinout Table XC40110XV Pinout Table (Continued) XC40110XV Pinout Table


    Original     		PDF XC4000XLA/XV XC4000XV XC40110XV HQ240 BG352 BG432 BG560 BC25 327 AF3 din 74 j29 p190 U28 726 IO464 BC25 328 547 B34 R3E28 AH36 AE31

    a1018

    Abstract: IS49NLS18160
    Text: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at


    Original     		PDF IS49NLS93200 IS49NLS18160 288Mb 533MHz 533MHz) IS49NLS1816025BLI IS49NLS9320033BI IS49NLS9320033BLI IS49NLS1816033BI IS49NLS1816033BLI a1018 IS49NLS18160

    2Mbit EPROM

    Abstract: 80C196K
    Text: Programmable Peripheral PSD3XX Family Field-Programmable Microcontroller Peripheral Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ Wide Operating Voltage Range — L-Versions: 3.0 to 5.5 volts — Others: 4.5 to 5.5 volts


    OCR Scan     		PDF

    386SX

    Abstract: VL82C286 t056 5091M TD351 VL82C331 tSU57 LIM EMS 4.0 vlsi 386sx VL82C320
    Text: VLSI T e c h n o l o g y , in c . VL82C320 SYSTEM CONTROLLER/DATA BUFFER DESCRIPTION The VL82C320 contains the system control and data buffering functions in a 160-lead quad flat pack. The VL82C320's functions are highly program m able via a set of internal


    OCR Scan     		PDF VL82C320 VL82C320 160-lead tim66 160-PIN 386SX VL82C286 t056 5091M TD351 VL82C331 tSU57 LIM EMS 4.0 vlsi 386sx