aegis A2a
Abstract: aegis A1B A2B 450 DO-205AB aegis A1A aegis a2b aegis DSASW0010065
Text: AEGIS SEMICONDUTORES LTDA. A1A:450.XX VOLTAGE RATINGS Part Number VRRM , VR V Max. rep. peak reverse voltage O This datasheet applies to: VRSM , VR (V) Max. nonrep. peak reverse voltage Metric thread: A1A:450.XX, A1B:450.XX O TJ = 0 to 200 C TJ = -40 to 0OC
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DO-205AB
aegis A2a
aegis A1B
A2B 450
DO-205AB
aegis A1A
aegis a2b
aegis
DSASW0010065
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A12B
Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for
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DS1280
68-pin
80-pin
DS1280FP-XX
44-pin
A12B
A14B
a17b
DS1280
A10B
A11B
A13B
DS1280FP-80
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IEC793
Abstract: No abstract text available
Text: Alcatel Multimode Fiber 50/125 Ref. A1b Process The fibers are manufactured using the APVD process. This is a deposition of Silicium dioxide and germanium dioxide inside a silica tube. The Alcatel APVD has been specifically developed for a mass production of fibers with a high
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150ns
IEC793
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aegis A1B
Abstract: aegis A1A aegis A2a aegis a2b aegis A1B 80 DO-205AA aegis A1A aegis 600/diode aegis a2b
Text: AEGIS SEMICONDUTORES LTDA. A1A:100.XX VOLTAGE RATINGS Part Number VRRM , VR V rep. peak reverse voltage This datasheet applies to: Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O O Metric thread: A1A:100.XX, A1B:100.XX O TJ = 0 to 180 C TJ = -40 to 0 C
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DO-205AA
aegis A1B
aegis A1A
aegis A2a
aegis a2b
aegis A1B 80
DO-205AA
aegis
A1A aegis
600/diode aegis a2b
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dallas ds1280
Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for
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DS1280
68-pin
80-pin
DS1280FP-XX
44-pin
dallas ds1280
A12B
A18B
a17b
DS1280
A10B
A11B
A13B
DS1280FP-80
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Z5U diode
Abstract: No abstract text available
Text: 積層陶瓷電容器 MULTILAYER CERAMIC CAPACITORS MODE : A1B MODE : A2Y T w T L d F F F=2.5 mm F=5 mm d=0.6mm SIZE CODE AND DIMENSIONS : Units in Inches millimeter SIZE CODE L R15 .150 (3.81) R20 R30 T LEAD DIAMETER(d) LEAD LENGTH(L) .150 (3.81) .100
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Neon Lamp A9A
Abstract: Neon Lamp 2ml Neon Lamp a2b B6A NE-21 715AS15 NE-2D ne51hr 56PR200 55-112R-0 6S6DC-120V
Text: CML Innovative Technologies MANU 067 CODE FIG. 1 FIG. 2 FIG. 4 ELECTRICAL INDUSTRY LAMPS FIG. 21 FIG. 22 FIG. 2 NEON LAMPS Cat. No. B6A NE-21 2ML(NE-38S) A1A(NE-2) A1B A1C A2A A2B(NE-2V) A9A(NE-2E) C2A(NE-2H) C2A-T(NE-2HT) A1G A1H C7A(NE-2D) C9A(NE-2J) *For 220-250 Volts
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NE-21)
NE-38S)
Neon Lamp A9A
Neon Lamp 2ml
Neon Lamp a2b
B6A NE-21
715AS15
NE-2D
ne51hr
56PR200
55-112R-0
6S6DC-120V
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Non-Linear Circuits Handbook Analog Devices
Abstract: remote irrigation control system Top Octave Synthesizer fuel tank AN-311 LM394 LF412 LM329 LM331A MM74C76
Text: A number of instrumentation applications can benefit from the use of logarithmic or exponential signal processing techniques. The design and use of logarithmic/exponential circuits are often associated with involved temperature compensation requirements and difficult to stabilize feedback
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circuit959
Non-Linear Circuits Handbook Analog Devices
remote irrigation control system
Top Octave Synthesizer
fuel tank
AN-311
LM394
LF412
LM329
LM331A
MM74C76
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Au1000
Abstract: Alchemy Semiconductor au1000 ALCHEMY SEMICONDUCTOR be0b 416SP a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
Text: APPLICATION NOTE EPSON GRAPHICS INTERFACES AND THE AU1000 Matt Brandt Epson Graphics Interfaces and the Au1000 REVISION NO.: 1.0 www.alchemysemi.com Page 1 of 7 Introduction The Epson graphics controller interface on the Au1000 is natively a 16 bit interface. If a 32 bit write is done to
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AU1000
Au1000
Alchemy Semiconductor au1000
ALCHEMY SEMICONDUCTOR
be0b
416SP
a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
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Untitled
Abstract: No abstract text available
Text: DS1750Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1750Y/AB Dual Voltage Partitioned 4096K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of VCc • Data is automatically protected during power loss A1B I1 1 321 2 3 4 31 1 A16 I1 A14 I1
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DS1750Y/AB
4096K
32-pin
DS1750Y)
DS1750A
DS1750Y/AB
32-PIN
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EABC80
Abstract: ca10 HABC80 EABC 80
Text: Dreifachdipd« - Triode für AM-PM-Demodulmtion und KT-YerStärkung a1B HABC80 *n <o o “ tc <o kBC,sAB 1 m ax. 21 Gewicht ca. 10 g 1»Heizerwerte für Serienspeisun# :-feiz Spannung Heizstrom Oxydkatode, indirekt geheizt V-h h ca. 19*0 0,15 y A Die übrigen Daten und Kurven sind denen der Type EABC 80 gleich«
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HABC80
EABC80
ca10
HABC80
EABC 80
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jackcon
Abstract: CC jackcon Z5U 2200 M 56ac
Text: ZN U MULTILAYER CERAMIC CAPACITORS MODE A1B MODE : A2Y 1u ~ r\• I L 1 - t- l T H fri F= 2.5 m m F=5 m m d = 0 .6 m m SIZE CODE AND DIMENSIONS : Units in Inches m illim e te r SIZE CODE L R15 .150 (3.81) T LEAD DIAMETER(d) .100 (2.54) 0.024 (0.60) W .150
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Untitled
Abstract: No abstract text available
Text: ± DRW NO. ZONE ALL D 4 , B4 A4 PART .NUMBER GROUND.CONTACT POST 960-610Y-A 0A 960-610Y-A 0B 960-610Y -A 0C 9 6 0 - 6 1 0 Y - A1A 9 6 0 - 6 1 0 Y - A1B 9 6 0 - 6 1 0 Y - A1C NO YES YES NO YES YES YES YES YES NO NO NO C -9 6 0 -6 1 0 Y -5 0 0 REV SCR NUMBER
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960-610Y
C-960-610Y-500
-960-610Y-500
C960-610Y-500
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Untitled
Abstract: No abstract text available
Text: ± TA B LE 1 P A R T NUMBER REV GROUND C O N T A C T MOUNTING POST 960-310Y-A0A B NONE Y ES 960-310Y-A0B B Y ES 960-310Y-A0C 960-310Y-A1A 9 6 0 - 3 1 0 Y - A1B B B 176-2005-740 176-2005-809 B B 960-310Y-A1C NONE Y ES NO 176-2005-740 176-2005-809 NO NO DRW NO.
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VER01
960-310Y-A0C
960-310Y-A1A
960-310Y-A0B
C-960-310Y-500
960-310Y-A0A
960-310Y-A1C
310Y-500
C960-310Y-500-NO-POST
C960-310Y-500
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Untitled
Abstract: No abstract text available
Text: ± DRW NO. GROUND C O N T A C T 960-410Y-A0B 960-410Y-A0A YES NO KEY Y ES NO YES NO KEY NO KEY Y ES NO NO NO KEY NO YES YES NO KEY NO KEY Y ES NO 9 6 0 - 4 1 0 Y - A1B 960-410Y-A1A 960-410Y-A0C 960-410Y-A1C K EY P O S I T I O N ZONE REV AL L A B DC POST S C R NUMBER
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VER01
960-410Y-A0C
960-410Y-A1C
960-410Y-A1A
960-410Y-A0B
960-410Y-A0A
C-960-410Y-500
Q1109-C
10Y-S00
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Untitled
Abstract: No abstract text available
Text: 13 12 10 2.35 ADD FOR ,1.30ENDW ALU 1.78- 2.65 PIN A1a -PIN A1b O -1.30 O I o I O O O O o I I 32.2 2 5 .9 0 1 O O O O o O O H (ADD FOR END W ALL I-R O W A I-R O W R I-R O W C I-R O W n I-R O W F I-R O W F I-R O W G I-R O W H I I- R O W
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30ENDW
SD-76035-001
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L3360
Abstract: 939B
Text: P a r t N u m b e r • WSB-XXX-A1B—3B 1B -2 Notes M aterial B ody : G la ss F ib e r R e in fo rc e d P o ly b u ty le n e T e r e p h th a la te P .B .T . UL 94V —0 R a te d C o n ta c ts : P h o s p h o r B ro n z e s e le c tiv e g o ld p la tin g o v e r n ic k e l.
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WSB012A1A3B1B
6/1SB050A1A3B1B
WSB060A1A3B1B
WSB062A1A3B1B
\WRK\0THER\AP\WSB-254.
L3360
939B
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G530T
Abstract: No abstract text available
Text: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a
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64Kx16
486/Pentium
15ns/20ns/25ns
67MHz
Mb75Qflfl
GG0b313
10H07-11-MAY95
HY6716110/111
4b750flfl
1DH07-11-MAY95
G530T
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HY67V18110/111 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad dress counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a posrtiveedge triggered clock K .
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HY67V18110/111
486/Pentium
20ns/25ns/30ns
40MHz
1DH04-11-MAY95
HY67V18110/111
HY67V18110C
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Untitled
Abstract: No abstract text available
Text: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge
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HY67V16100/101
64Kx16
486/Pentium
7ns/12ns/17ns
67MHz
486/Pentium
1DH06-11-MAY9S
HY67V16100/101
1DH06-11-MAY95
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI HY67V18100/101 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .
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HY67V18100/101
486/Pentium
7ns/12ns/17ns
67MHz
486/Pentlum
1DH02-22-MAY95
HY67V18100/101
HY67V18100C
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Untitled
Abstract: No abstract text available
Text: H Y 6 7 V 1 6 1 1 0 /1 1 1 HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIM INARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a
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64Kx16
486/Pentium
20ns/25ns/30ns
50MHz
1DH03-11-MAY95
HY67V16110/111
4b750Ã
1DH08-11-MAY95
HY67V16110C
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .
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486/Pentium
7ns/12ns/17ns
67MHz
486/Pent
00DbSS3
1DH02-22-MAY95
HY67V18100/101
HY67V18100C
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5252 f 1110
Abstract: 5252 f 1101 EC000 MC68306 DRA-20 tas 5253
Text: SECTION 5 SYSTEM OPERATION This section contains detailed descriptions and programming information for the system functions and registers outside the EC000 core in the MC68306. NOTE None of the MC68306 internal resources are accessible by an external bus master. The following address map and operation
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EC000
MC68306.
MC68306
32-bit
MC68306
5252 f 1110
5252 f 1101
DRA-20
tas 5253
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