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    A2097 Search Results

    A2097 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
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    A2097 Price and Stock

    Toshiba America Electronic Components 2SA2097(TE16L1,NQ)

    TRANS PNP 50V 5A PW-MOLD
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    DigiKey 2SA2097(TE16L1,NQ) Cut Tape 1,356 1
    • 1 $1.16
    • 10 $0.73
    • 100 $1.16
    • 1000 $0.33871
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    2SA2097(TE16L1,NQ) Digi-Reel 1,356 1
    • 1 $1.16
    • 10 $0.73
    • 100 $1.16
    • 1000 $0.33871
    • 10000 $0.33871
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    2SA2097(TE16L1,NQ) Reel 2,000
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    • 10000 $0.28364
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    Mouser Electronics 2SA2097(TE16L1,NQ) 1,922
    • 1 $0.9
    • 10 $0.61
    • 100 $0.422
    • 1000 $0.308
    • 10000 $0.258
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    Avnet Asia 2SA2097(TE16L1,NQ) 24 Weeks 2,000
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    Chip1Stop 2SA2097(TE16L1,NQ) Cut Tape 990
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    • 10 $0.837
    • 100 $0.387
    • 1000 $0.308
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    Fairview Microwave Inc FMCA2097-48

    COAX CBL SMA TO TNC
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    DigiKey FMCA2097-48 Bag 1
    • 1 $188.5
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    Newark FMCA2097-48 Bulk 56 1
    • 1 $185.92
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    • 100 $150.06
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    RS FMCA2097-48 Bulk 8 Weeks 1
    • 1 $143
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    Fairview Microwave Inc FMCA2097-12

    COAX CBL SMA TO TNC
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    DigiKey FMCA2097-12 Bag 1
    • 1 $150.06
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    Newark FMCA2097-12 Bulk 208 1
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    RS FMCA2097-12 Bulk 8 Weeks 1
    • 1 $111
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    Fairview Microwave Inc FMCA2097-36

    COAX CBL SMA TO TNC
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    DigiKey FMCA2097-36 Bag 1
    • 1 $176.59
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    Newark FMCA2097-36 Bulk 75 1
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    RS FMCA2097-36 Bulk 8 Weeks 1
    • 1 $133
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    Fairview Microwave Inc FMCA2097-18

    COAX CBL SMA TO TNC
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    DigiKey FMCA2097-18 Bag 1
    • 1 $157.34
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    Newark FMCA2097-18 Bulk 150 1
    • 1 $152.11
    • 10 $141.3
    • 100 $122.77
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    RS FMCA2097-18 Bulk 8 Weeks 1
    • 1 $117
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    Find more A2097 price and stock on Findchips.com

    A2097 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V209617

    Abstract: MI6FAP100V1
    Text: Miniature Fuses Very HRC Fuses 6x46 FA Very Fast Acting 1000V from 0.1 to 1.25A Complying with UL recognized E76491 FERRAZ speciality 6.3x46 Product weight: 2.5g max. Catalog Number Reference Number Rated Voltage V Nominal Current (A) Breaking capacity @


    Original     		PDF E76491 MI6FAP100V0 W209733 X209734 Y209735 MI6FA100V0 G076458 MI6FAP100V1 V209617 MI6FAP100V1

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    transistor A2097

    Abstract: 2SA2097 A2097
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 transistor A2097 2SA2097 A2097

    A2097

    Abstract: 2SA2097
    Text: A2097 東芝トランジスタ シリコンPNPエピタキシャル形 A2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.27 V (最大)


    Original     		PDF 2SA2097 20070701-JA A2097 2SA2097

    2sa2097

    Abstract: transistor A2097 A2097
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 2sa2097 transistor A2097 A2097

    transistor A2097

    Abstract: No abstract text available
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 transistor A2097

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA2097

    Abstract: transistor pnp a110
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 2SA2097 transistor pnp a110

    transistor A2097

    Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 SC-64 transistor A2097 A2097 2SA2097 2SA20 transistor 2SA2097

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    transistor A2097

    Abstract: A2097 2SA2097
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 transistor A2097 A2097 2SA2097

    Untitled

    Abstract: No abstract text available
    Text: A2097 東芝トランジスタ シリコン PNP エピタキシャル形 A2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm : h FE = 200~500 I C = −0.5 A • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: V CE (sat) = −0.27 V (最大)


    Original     		PDF 2SA2097

    V209617

    Abstract: M076
    Text: Miniature Fuses Semiconductor Fuses Axial leads 6x46 FA Very fast acting Homologations reconnues UL E 76491 1 000 V ~ FA Approvals UL recognized E 76491 Spécialité FERRAZ TRES RAPIDE VERY FAST ACTING DE (FROM) 0,1A A (TO) 1A TAILLE (SIZE) : 6,3 x 46


    Original     		PDF 55x42x19) V209617 M076

    P076465

    Abstract: P075660 MI6FA100V1 MI6FAP100V1 fa6x46 J076460 MI6FAP100V0 G076458 V209617
    Text: Miniature Fuses Miniature Fuses Very HRC Fuses 6x46 1000V - FA Very Fast Acting FROM 0,1 TO 1A Ferraz-Shawmut speciality Approvals UL recognized E 76491 FERRAZ speciality Dimensions Ceramique tube Corps céramique 6x46 Ceramique tube Laiton nickelé brass


    Original     		PDF 6FAP100V1 55x42x19) P076465 P075660 MI6FA100V1 MI6FAP100V1 fa6x46 J076460 MI6FAP100V0 G076458 V209617

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    A2187

    Abstract: A2198 A2039 transistor A2039 A2039 transistor A2180 a2057 A1013 A2023 transistor A3301
    Text: IA-64 Assembler User’s Guide January 2000 Order Number: 712173-001 World Wide Web: http://developer.intel.com THIS DOCUMENT IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY, NONINFRINGEMENT, FITNESS FOR ANY PARTICULAR PURPOSE, OR ANY WARRANTY OTHERWISE ARISING OUT OF ANY


    Original     		PDF IA-64 32-bit A2187 A2198 A2039 transistor A2039 A2039 transistor A2180 a2057 A1013 A2023 transistor A3301

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    transistor A2097

    Abstract: No abstract text available
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097 SC-64 transistor A2097

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    Untitled

    Abstract: No abstract text available
    Text: A2097 TOSHIBA Transistor Silicon PNP Epitaxial Type A2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)


    Original     		PDF 2SA2097