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    A212001E Search Results

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    A212001E Price and Stock

    Infineon Technologies AG PTFA212001EV4XWSA1

    RF MOSFET LDMOS 30V H-36260-2
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    Infineon Technologies AG PTFA212001EV4R0XTMA1

    RF MOSFET LDMOS 30V H-36260-2
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    Infineon Technologies AG PTFA212001EV4R250XTMA1

    RF MOSFET LDMOS 30V H-36260-2
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    A212001E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC-600A

    Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
    Text: A212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The A212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A BCP56 LM7805 RO4350

    PTFA212001E

    Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4
    Text: A212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The A212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4

    Untitled

    Abstract: No abstract text available
    Text: A212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The A212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2

    LM7805

    Abstract: PTFA212001E
    Text: A212001E PTFA212001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The A212001E and PTFA212001F are thermally-enhanced, 200-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA212001E PTFA212001F 200-watt, H-30260-2 H-31260-2 LM7805

    A211801E

    Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E
    Text: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh


    Original     		PDF H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E