IC 4556
Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.
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a23SbOS
62702-F
G--14
IC 4556
4556D
transistor Siemens 14 S S 92
GPB16
4556 d
transistor BF 939
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2f5 transistor
Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF
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a23SbOS
2f5 transistor
Transistor BFT 99
TIC 122 Transistor
2SC 2090
Transistor BFT 44
U/25/20/TN26/15/850/BFT75
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Untitled
Abstract: No abstract text available
Text: • A23SbOS 0035334 2 ■ SIEG Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E » ■ A23SbDS Q03flM33 M « S I E 6 B82412 EMI Suppression Chokes SIEMENS AKTIENGESELLSCHAF
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A23SbOS
A23SbDS
Q03flM33
B82412
023SbOS
G03fl43b
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Untitled
Abstract: No abstract text available
Text: • A23SbOS 0035334 2 ■ SIE G Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E D ■ ô235bD5 QG3Ô437 1 « S I E G B82422 EMI Suppression Chokes
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A23SbOS
235bD5
B82422
B-39-13
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SAE0700
Abstract: SAE 0700 ic sae 0700
Text: 47E J> SIEMENS A23SbOS 003S1Q7 H « S I E 6 SIEMENS AKTIENGESELLSCHAF Audible Signal Device SAE 0700 Bipolar 1C Features • • • • Direct AC-voltage feeding possible through integrated bridge rectifier Integrated overvoltage protection through Z-diode, approx. 28 V
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A23SbOS
003S1Q7
67000-A2445
E35b05
nF1000
SAE0700
SAE 0700
ic sae 0700
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diode 3a05
Abstract: No abstract text available
Text: büE J> -O £ a23SbOS DG4fc.Sfll SÜ3 » S I E G SFH 484501 SIEMENS 5 X 40 STRIPE ARRAY SIEMENS AKTIENGESELLSCHAf FEATURES P a cka g e D im e n sio n s in m m • GRINSCH-Quantum-Well Structure with Dielectric Coating (Asymmetrical l= V □L • Monochromatic Radiation Source
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a23SbOS
diode 3a05
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Untitled
Abstract: No abstract text available
Text: faOE D • a23SbOS D0Mb353 Sé? B S I E G SIEMENS -T'*t- S 3 PHOTOTRANSISTOR OPTOCOUPLER SIEMENS AKTIENGESELLSCHAF FEATURES • IL2B P a c k a g e D im e n s io n s in In c h e s m m F iv e C T R S e le c t io n s • H ig h C o lle c t o r - E m it t e r V o lt a g e , B V CEO= 5 0 V
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a23SbOS
D0Mb353
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SIEMENS thyristor
Abstract: VDR Siemens US-802 BR103 BR 103 thyristor 1
Text: 2SC D • a23SbOS 0004755 T BISIEfi \ Silicon M iniature Thyristor 25C C K 7 5 5 BR103 - S I E M E N S AKTIEN6ESELLSCHAF - BR 103 is a silicon planar thyristor in a TO-92 plastic package 10 A 3 DIN 41868 . This thyristor is suitable for various applications within iow power ranges, e.g. controls
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a23SbQS
Q0Q47SS
68000-A729
SIEMENS thyristor
VDR Siemens
US-802
BR103
BR 103
thyristor 1
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TRANSISTOR G13
Abstract: c 939 transistor bf 4556 d BF939
Text: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
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Q62702-F
fl235b05
0Q04557
TRANSISTOR G13
c 939
transistor bf
4556 d
BF939
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SIEMENS THYRISTOR
Abstract: BR103 us-802 gk 803
Text: 2SC D • a23SbOS 0004755 T «¡SIEfi \ Silicon Miniature Thyristor 25C 04 755 BR103 D - S I E M E N S AKTIEN6ESELLSCHAF - BR 1 03 is a silicon planar thyristor in a T O -9 2 plastic package 10 A 3 DIN 41868 . This thyristor is suitable for various applications within low power ranges, e.g. controls
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a23SbOS
BR103
fl535b05
0QQM757
23SbQS
SIEMENS THYRISTOR
BR103
us-802
gk 803
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3Tg 21 10 siemens
Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Text: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper
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A23SbOS
C67076-A2101-A2
C67076-A2008-A2
3Tg 21 10 siemens
BSM25GB100D
3Tg 21 20 siemens
siemens igbt BSM 150 Gb 160 d
siemens 3TG
3TG siemens
pl0l
siemens igbt BSM 300
T-23
siemens igbt BSM 25 Gb 100 d
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BF245
Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
Text: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar
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S23SbQS
Q0044S7
o-BF245C
Q62702-F236
Q62702-F209
Q62702-F182
Q62702-F205
BF245A
AKTIEN6ESELLSCHAF-BF245C
103MHz
BF245
BF 245
2SC 1885
transistor BF 509
bf245b
bf245a
transistor BF245 A
BF 245 C
Q62702-F205
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S150
Abstract: UX-1111-084-GH-Y-33 011X1
Text: SIEMENS AKTIENGESELLSCHAF 47E i> • a23SbOS 0027450 4 « S I E G S IE M E N S KOM 0622059 64-ELEMENT SILICON CIRCULAR ARRAY VERY LOW DARK CURRENT Outline Drawing Dimensions mm Chip 4 ,03 Seal I 1 O o PC boa rd 1 0 .4 27,4 ¿54 spacing t tl % ft 25 %i 30 24
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fi235bD5
D02745D
64-ELEMENT
011x1
S150
UX-1111-084-GH-Y-33
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Untitled
Abstract: No abstract text available
Text: • a23SbOS 00^03*1 737 SIEMENS 2 Kbit 256 x 8 bit Serial CMOS EEPROMs, Serial Peripheral Interface SLx 25C02 Preliminary Features • Data EEPROM internally organized as 256 bytes and 32 pages x 8 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation
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a23SbOS
25C02
GPS051
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:
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5117800AJ-50/-60/-70/-80
235b05
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siemens ts 4140
Abstract: a0d0h
Text: SIEMENS SAB-C503 8-Bit CMOS Microcontroller • Compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 8 K x 8 ROM SAB-C503-1R only • 256 x 8 RAM • Four 8-bit ports, (including one input port for digital or analog input)
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SAB-C503
SAB-C503-1R
16-bit
10-bit
15-bit
P-LCC-44
SAF-C503
SAB-C503-L/C503-1R
SAB-C503-LN
siemens ts 4140
a0d0h
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Untitled
Abstract: No abstract text available
Text: 47E D • SIEM EN S A235bGS 0034130 SIEMENS AKTIENGESELLSCHAF Infrared Signal Receiver 4 ■ SIE6 TDA 4065 Preliminary Data Bipolar 1C Features • • • • • • High input sensitivity Improved com pensation for extraneous light in range of normal indoor illuminance
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A235bGS
Q67000-A8246
4065-X
67000-A8247
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12
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S879-B200-V1
fl23SbD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and
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P-DSO-28-1
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Untitled
Abstract: No abstract text available
Text: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2
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SAB-C501
SAB-C501
16-bit
P-DIP-40
P-LCC-44
SAF-C501
SAB-C501-L/C501
80C32/C52
80C52
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BTS409L1
Abstract: E3062 siemens profet description E3043 E3062A smd diode EG - 413 Q67060S6107A2 v2l smd zener
Text: Û235bd5 00fim04 =115 S IE M E N S PROFET BTS409L1 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 M-Oad dump • Clamp of negative voltage at output Wbb-VbuT Avalanche • Short-circuit protection Vbb operation)
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235bd5
00fim04
BTS409L1
23SbOS
O-22QAB/5
Q67060-S6107-A2
O-22QAB/5,
E3043
BTS409L1
E3062
siemens profet description
E3062A
smd diode EG - 413
Q67060S6107A2
v2l smd zener
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c535
Abstract: 80C535 80c515 poe cci 1033 siemens 80C535 microcontroller 80c535-n sab-80535 80C51 sab80c51 B158-H6579-X-X-7600
Text: SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
0235bD5
L1D30
023SbOS
c535
80C535
poe cci 1033
siemens 80C535 microcontroller
80c535-n
sab-80535
80C51
sab80c51
B158-H6579-X-X-7600
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siemens scr
Abstract: scr 6A scr siemens 235L BTS620L1 BTS621L1 GPT05167
Text: m ¿castas ooôil^i iôt m SIEMENS PROFET BTS620L1 Smart Two Channel Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 • Short-circuit protection VLoad dump • Current limitation Vbb operation) • Thermal shutdown
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BTS620L1
23SbOS
fl23SbOS
O-220AB/7
Q67060-S6301-A2
GPT05167
siemens scr
scr 6A
scr siemens
235L
BTS620L1
BTS621L1
GPT05167
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N1475
Abstract: No abstract text available
Text: f l 235 bOS G G 37 b 47 7 • MKT Capacitors SI EMENS A KT I EN 6 E S E L L S C H A F M7E D - - SIEG E3 B 3 2 5 2 0 .B 3 2 52 9 / f 'C f S l 7 ' O S. M e t a liz a d p o ly e s t e r film c a p a c it o r s in a c c o r d a n c e w it h D IN 4 4 1 1 2
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