siemens BSM b2

Abstract: BTS 472 E transistor RCA 467 B37 zener diode bts 43202 bts43202 RCA 40839 RCA 467 ABB Semiconductors SCR siemens relay 24v/dc
Contextual Info: fl535b05 D0127S5 SIEM ENS T IS M PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features * Load dump and reverse battery protection1 80 VLoad dump * Clamp of negative voltage at output Vbb- I/o u t Avalanche Clamp 58 * Short-circuit protection

Contextual Info: ÔÛD D • fl535b05 OOmfaflM û «SIEfi 88D 14684 D T - , 3 ¿7 ” / 3 *=* BUZ 58 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channei a 1000 V Drain-source voltage K>s = 3,6 A Continuous drain current h Draln-source on-resistance ^D S o n = 2,6 a

80487

Abstract: D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D929 Q62702-D930 BD 202 transistors
Contextual Info: 2SC T> U fl535b05 QQ04373 7 M S I E 6 . PNP Silicon Planar Transistors -T-33'rt BD 487 _BD 488 SIEMENS AKTIENGESELLSCHAF 04373 B D 4 8 7 and B D 4 8 8 are epitaxial P N P silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The

BU 103 t transistor

Abstract: DIN 41872 BU 103 A transistor 2U25
Contextual Info: 55C D fl535b05 0004ÔSM 1 « S I E G , • T-33-29 NPN Silicon Darlington Power Transistor BU X 28 Not for new design - SIEMENS AKTIEN6ESELLSCHAF -BU X 28 is a triple diffused monolithic NPN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between

F245C

Abstract: F245A BC 245 C bf245 BF 245 2bf245 BF 245 B Siemens transistors rf C 245 b bf245c
Contextual Info: 25C D • fl535b05 Q0Q4MS7 2 « S I E Û T - K BF 245 A BF 245 B "BF 245 C N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 57 - l ï D - BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar

C67078-A1607-A3

Abstract: BUZ58A
Contextual Info: ÔÛD D • fl535b05 OOmfaflM û «SIEfi 88D 14684 D T - ,3 ¿7 ”/ 3 *=* BUZ 58 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channei a 1000 V Drain-source voltage K>s = 3,6 A Continuous drain current h a Draln-source on-resistance ^ D S o n =

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

Contextual Info: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

Contextual Info: fl235b05 ODfllSCH 3ññ SIEMENS PROFET BTS 432 12 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 80 H o a d dump • Clamp of negative voltage at output 58 Vbb-VouT Avalanche Clamp • Short-circuit protection

siemens ts 4140

Abstract: a0d0h
Contextual Info: SIEMENS SAB-C503 8-Bit CMOS Microcontroller • Compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 8 K x 8 ROM SAB-C503-1R only • 256 x 8 RAM • Four 8-bit ports, (including one input port for digital or analog input)

cn/A/U 237 BG

Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Fast 32-bit division, 16-bit 2 multiplication,

TCA315A

Abstract: TCA 325 A tca325 tca322 TCA325A tca315
Contextual Info: 47E » • SIEMENS 023Sb05 0034734 T « S I E G SIEMENS AKTIEN6ESELLSCHAF T ' 1 ^ 5 3 Comparators with Darlington Input TTL-Compatible TCA 312 TCA 315 Features Bipolar 1C • • • • • • • • 2 Very high input resistance Large control range High output current

Contextual Info: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time

siemens ts 4140

Abstract: slma PEB2040 TS01S HSCC "digital switching system" TI344
Contextual Info: SIEMENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS IC Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter SFH 229 SFH 229 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

7a3 diode

Abstract: KDS 8L V103 125W 140W kds 8a NF 430 n a3
Contextual Info: ÔÔD D • 0535bQ5 D01SQ3Ô 4 H S I E G SIEMENS AKTIENGESELLSCHAFT"''3 ^ '"/^ Main ratings BUZ 354 N-Channel = 500 V Draln-source voltage l^is = 8A Continuous drain current /d Drain-source on-resistance ^D S o n = 0,8 a Description Case SIPMOS, N-channel, enhancement mode

kp 72

Contextual Info: ,•— Infineon technologies Surface Mount Piezoresistive Silicon Absolute Pressure Sensor KP 202-R/RK KP 203-R/RK Preliminary Features • • • • • High sensitivity and linearity Fast response Very small dimensions Low cost Produced in qualified semiconductor

Contextual Info: Silicon Piezoresistive Pressure Sensor KPY 62-RK KPY 66-RK Features • • • • Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability • High long term stability

SMD Transistor t30

Abstract: transistor SMD t30
Contextual Info: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level

28N05L

Contextual Info: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: Infineon technologies Surface Mount Capacitive Silicon Absolute Pressure Sensor KP 100 Preliminary Features • • • • • • • Digital output Serial Peripheral Interface SPI Offset calibrated CMOS compatible surface micromachining Diagnostic modes