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    A30 TRANSISTOR Search Results

    A30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Thyristor bst 2

    Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
    Text: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse


    Original     		PDF CA3081, CA3082 1-888-I CA3082 CA3081) CA3082) 100mA Thyristor bst 2 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96

    K9F8G08U0M

    Abstract: K9F8G08U0M-PCB0 K9F8G08U K9XXG08XXM K9F8G08UXM SAMSUNG 4gb NAND Flash Qualification Report A3005H
    Text: K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9KAG08U1M K9F8G08U0M K9F8G08B0M K9F8G08UXM 100ns) K9F8G08U0M-PCB0 K9F8G08U K9XXG08XXM K9F8G08UXM SAMSUNG 4gb NAND Flash Qualification Report A3005H

    K9F8G08U0M

    Abstract: K9F8G08 K9F8G08U0M-PCB0 K9F8G08U K9F8G08UXM K9KAG08U1M K9F8G08U0 K9F8G k9f8g08x0m K9F8G08U0M-P
    Text: K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9KAG08U1M K9F8G08U0M K9F8G08B0M K9F8G08UXM 4224Byte 100ns) K9F8G08 K9F8G08U0M-PCB0 K9F8G08U K9F8G08UXM K9KAG08U1M K9F8G08U0 K9F8G k9f8g08x0m K9F8G08U0M-P

    K9F4G08U0B

    Abstract: K9K8G08U0B K9WAG08U1B K9K8G08U0B-PCB0 Samsung k9f4G08u0B K9WAG08U1B-PCB0 K9K8G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1B-P samsung K9K8G08U0B-PCB0
    Text: Advance FLASH MEMORY K9K8G08U0B K9WAG08U1B K9K8G08U0B K9WAG08U1B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U0B K9WAG08U1B K9F4G08U0B K9WAG08U1B K9K8G08U0B-PCB0 Samsung k9f4G08u0B K9WAG08U1B-PCB0 K9K8G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1B-P samsung K9K8G08U0B-PCB0

    K9WBG08U1M

    Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
    Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P

    K9K8G08U0A-PCB0

    Abstract: K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A
    Text: Preliminary FLASH MEMORY K9WAG08U1A K9K8G08U0A K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9XXG08UXA K9K8G08U0A-PCB0 K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A

    K9WAG08U1M-PCB0

    Abstract: K9K8G08U0M-PCB0 samsung 2GB Nand flash SAMSUNG 8gb NAND Flash memory K9XXG08UXM-XIB0 K9K8G08U samsung 1Gb nand flash samsung 8Gb nand flash serial flash memory 8gb K9K8G08U0M
    Text: Preliminary FLASH MEMORY K9WAG08U1M K9K8G08U0M K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1M K9K8G08U0M K9XXG08UXM K9WAG08U1M-PCB0 K9K8G08U0M-PCB0 samsung 2GB Nand flash SAMSUNG 8gb NAND Flash memory K9XXG08UXM-XIB0 K9K8G08U samsung 1Gb nand flash samsung 8Gb nand flash serial flash memory 8gb K9K8G08U0M

    K9K8G08U0A-PCB0

    Abstract: K9WAG08U1A-PCB0
    Text: Preliminary FLASH MEMORY K9WAG08U1A K9K8G08U0A K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9XXG08UXA AG08U1A K9K8G08U0A-PCB0 K9WAG08U1A-PCB0

    K9K8G08U0M

    Abstract: K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip
    Text: K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1M K9K8G08U0M K9NBG08U5M K9XXG08UXM K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip

    Samsung Flash K9WAG08U1A

    Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
    Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A

    K9G8G08U0M

    Abstract: K9G8G08U0 K9G8G08U K9G8G 128-page K9G8G08U0M-P K9G8G08U0M-PCB samsung 2GB Nand flash 121 pins "4bit correction" K9G8G08U0MPCB0
    Text: Preliminary FLASH MEMORY K9LAG08U1M K9G8G08U0M K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9LAG08U1M K9G8G08U0M K9XXG08UXM K9G8G08U0M K9G8G08U0 K9G8G08U K9G8G 128-page K9G8G08U0M-P K9G8G08U0M-PCB samsung 2GB Nand flash 121 pins "4bit correction" K9G8G08U0MPCB0

    CY7B199-12

    Abstract: LVT16245 SN74ACT3632-15 TMS27C040 TMS55160-70 SDRAM 1994 Texas Instruments U58 248 vram 32k 1995 AND sdram AND SN74LVT16244
    Text: Memory Interface on TMS320C8x Literature Number: BPRA069 Texas Instruments Europe December 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest


    Original     		PDF TMS320C8x BPRA069 TMS320C80 TMS320C80 TMS34020 CY7B199-12 LVT16245 SN74ACT3632-15 TMS27C040 TMS55160-70 SDRAM 1994 Texas Instruments U58 248 vram 32k 1995 AND sdram AND SN74LVT16244

    B34 transistor

    Abstract: 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R32C
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


    Original     		PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER B34 transistor 50MHZ CX20202A-1 CXD1178Q CXD2303Q R32C

    alu 74181

    Abstract: 25B22 f422 S2 f19
    Text: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),


    OCR Scan     		PDF CFT1812A CFT1812A 32-bit 74181-type) CFT1810A alu 74181 25B22 f422 S2 f19

    TRANSISTOR A30

    Abstract: A30 TRANSISTOR Intel 8237A
    Text: GFI2370A GFI2370A GFI2370A DMA CONTROLLER GENERAL DESCRIPTION : THE GFI2370A IS COMPATIBLE IN FUNCTIONALITY WITH THE INTEL 8237A 4-CHANNEL PROGRAMMABLE DMA CONTROLLER. THE PERFORMANCE IS MUCH IMPROVED OVER THE STANDARD PART. FOR A DETAILED FUNCTIONAL DESCRIPTION, SEE THE INTEL DATA BOOK.


    OCR Scan     		PDF GFI2370A GFI2370A LL7000 LSA2000 TRANSISTOR A30 A30 TRANSISTOR Intel 8237A

    a2724

    Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
    Text: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :


    OCR Scan     		PDF CFB0230A CFB023 32-bit CFB0230A flE-f32) a2724 Transistor A23 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder

    Untitled

    Abstract: No abstract text available
    Text: f Z T SGS-THOMSON *•7#s SD1463 TCC0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ . ■ ■ . 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION p 0UT = 125 W MIN. WITH 7.0 dB GAIN .400 .425 8LFL (M 168) X epoxy sealed O R D ER CODE


    OCR Scan     		PDF SD1463 TCC0204-125) SD1463

    dB-50

    Abstract: No abstract text available
    Text: CFI2371A CFI2371A CFI2371A DMA Controller DESCRIPTION : CFI2371A is designed to be fully compatible with the GFI2370A, except that channels 2 and 3 are not functionally supported. The CFI2371A is compatible to the CFX2370A in I/Os, in programming, and in channels 0 and 1 i.e., supporting also


    OCR Scan     		PDF CFI2371A CFI2371A GFI2370A, CFX2370A dB-50

    Untitled

    Abstract: No abstract text available
    Text: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST


    OCR Scan     		PDF SD1456

    Untitled

    Abstract: No abstract text available
    Text: GFI2371A GFI2371A GFI2371A DMA CONTROLLER GENERAL DESCRIPTION: THE GFI2371A MEGAFUNCTION IS DESIGNED TO BE FOLLY COMPATIBLE WITH THE GFI2370A, OR THE INTEL 8237A, EXCEPT THAT CHANNELS 2 AND 3 ARB NOT FUNCTIONALLY SUPPORTED. THIS ALLOWS FOR A LOWER GATE COUNT, WHICH GREATLY IMPROVES THE PERFORMANCE OVER


    OCR Scan     		PDF GFI2371A GFI2371A GFI2370A,

    Untitled

    Abstract: No abstract text available
    Text: BSE D POUIEREX INC f o m e i o • 72T4bEl 00QMM7A h HP R X KET24510HB High-Beta Six-Darlington Transistor Module • T - 3 3 -3 5 r Pow erex, In c., Hlllls Street, Youngwood, Pennsylvania 15697 4I2J 925-7272 Powerex Europe, S.A ., 428 Avenue G, Durand, BP107, 72003 L e Mans, France (43 41.14.14


    OCR Scan     		PDF 72T4bEl 00QMM7A KET24510HB BP107, Amperes/600 7STMb21 T-33-35

    NEC B536

    Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
    Text: NEC SILICON POWER TRANSISTORS HfCTR0N“ 2SB536,2SB537/2SD381,2SD382 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING PNP/NPN SILICON EPITAXIAL TRANSISTOR DESCR IPTIO N The 2SB536, 2SB537 and 2SD381, 2SD382 are silicon epitaxial transistors intended for a wide variety of


    OCR Scan     		PDF 2SB536 2SB537/2SD381 2SD382 2SB536, 2SB537 2SD381, 2SD382 537/2S 2SB536/2SD381 NEC B536 2SB536 NEC 2sD381 b536 B-536 nec b 537 b537

    Untitled

    Abstract: No abstract text available
    Text: CFI2370A CFI2370A CFI2370A DMA Controller DESCRIPTION: CFI2370A is compatible in functionality with the Intel 8237A 4-channel programmable DMA controller. Performance is improved mu c h over that of the standard part. I/Os can be made compatible to the standard part, as shown in the diagram on page 5 of


    OCR Scan     		PDF CFI2370A CFI2370A

    20NA50

    Abstract: No abstract text available
    Text: ¿57 TYP E SGS-THOMSON N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STW 20NA50 S T W 2 0 N A 50 ¡U È T O « dss 500 V R D S o n Id < 0.27 a 20 A . TYPICAL R Ds(on) = 0.22 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED


    OCR Scan     		PDF 20NA50 STW20NA50 O-247 20NA50