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    K9F8G08U0A-P

    Abstract: K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0
    Text: Advance FLASH MEMORY K9WBG08U5A K9F8G08U0A K9F8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U5A K9F8G08U0A 100ns) K9F8G08U0A-P K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0

    K9F8G08U0M

    Abstract: K9F8G08 K9F8G08U0M-PCB0 K9F8G08U K9F8G08UXM K9KAG08U1M K9F8G08U0 K9F8G k9f8g08x0m K9F8G08U0M-P
    Text: K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9KAG08U1M K9F8G08U0M K9F8G08B0M K9F8G08UXM 4224Byte 100ns) K9F8G08 K9F8G08U0M-PCB0 K9F8G08U K9F8G08UXM K9KAG08U1M K9F8G08U0 K9F8G k9f8g08x0m K9F8G08U0M-P

    K9F8G08U0M

    Abstract: K9F8G08U0M-PCB0 K9F8G08U K9XXG08XXM K9F8G08UXM SAMSUNG 4gb NAND Flash Qualification Report A3005H
    Text: K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9KAG08U1M K9F8G08U0M K9F8G08B0M K9F8G08UXM 100ns) K9F8G08U0M-PCB0 K9F8G08U K9XXG08XXM K9F8G08UXM SAMSUNG 4gb NAND Flash Qualification Report A3005H

    K9WBG08U1M

    Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
    Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    k9gag08u0m-pcb0

    Abstract: K9GAG08U0M samsung k9gag08u0m K9F8G08U0M K9GAG08 K9GAG08U K9GAG K9GAG08B0M K9LBG08U1M K9F8G08
    Text: Preliminary FLASH MEMORY K9GAG08B0M K9GAG08U0M K9LBG08U1M K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9GAG08B0M K9GAG08U0M K9LBG08U1M K9XXG08UXM 4224Byte 100ns) k9gag08u0m-pcb0 samsung k9gag08u0m K9F8G08U0M K9GAG08 K9GAG08U K9GAG K9GAG08B0M K9LBG08U1M K9F8G08

    K9KAG08U0A

    Abstract: K9QCG08U5A K9F8G08U0A K9F8G08 K9F8G08U SAMSUNG 4gb NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9QCG08U5A K9QCG08U5A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9QCG08U5A 100ns) K9KAG08U0A K9QCG08U5A K9F8G08U0A K9F8G08 K9F8G08U SAMSUNG 4gb NAND Flash Qualification Report

    NAND08GW3B2CN6

    Abstract: NAND128W3A28N6 NAND01GW3B2BN6 NAND256W3A2B K9F4G08V0A NAND08GW3B2CN nand512w3a2c2a6 15cells UARTRS485 SAMSUNG RF MODULATORS
    Text: SPEAr320S Embedded MPU with ARM926 core for industrial and consumer applications Datasheet − production data Features • ARM926EJ-S CPU core, up to 333 MHz ■ Multilayer bus matrix, up to 166 MHz ■ Internal memories: 32 KB ROM, 8 KB SRAM ■ Memory interfaces:


    Original     		PDF SPEAr320S ARM926 ARM926EJ-S DDR2-666, LPDDR-333) 8-/16-bit 8-/16-bit NAND08GW3B2CN6 NAND128W3A28N6 NAND01GW3B2BN6 NAND256W3A2B K9F4G08V0A NAND08GW3B2CN nand512w3a2c2a6 15cells UARTRS485 SAMSUNG RF MODULATORS

    NAND128W3A28N6

    Abstract: nand512w3a2c2a6
    Text: SPEAr320S Embedded MPU with ARM926 core for industrial and consumer applications Datasheet − production data Features • ARM926EJ-S CPU core, up to 333 MHz ■ Multilayer bus matrix, up to 166 MHz ■ Internal memories: 32 KB ROM, 8 KB SRAM ■ Memory interfaces:


    Original     		PDF SPEAr320S ARM926 ARM926EJ-S DDR2-666, LPDDR-333) 8-/16-bit 8-/16-bit NAND128W3A28N6 nand512w3a2c2a6

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    NAND128W3A28N6

    Abstract: NAND256W3A2B K9F4G08V0A NAND08GW3B2CN6 NAND08GW3B2CN NAND02GW3B2CN6 SST25LF TFT capacitive touchscreen, 16M colors NAND08GW3B2C-N nand flash algorithm, arm9, micron
    Text: SPEAr320S Embedded MPU with ARM926 core for industrial and consumer applications Datasheet − production data Features • ARM926EJ-S CPU core, up to 333 MHz ■ Multilayer bus matrix, up to 166 MHz ■ Internal memories: 32 KB ROM, 8 KB SRAM ■ Memory interfaces:


    Original     		PDF SPEAr320S ARM926 ARM926EJ-S DDR2-666, LPDDR-333) 8-/16-bit 8-/16-bit NAND128W3A28N6 NAND256W3A2B K9F4G08V0A NAND08GW3B2CN6 NAND08GW3B2CN NAND02GW3B2CN6 SST25LF TFT capacitive touchscreen, 16M colors NAND08GW3B2C-N nand flash algorithm, arm9, micron

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand