28LV64
Abstract: 28LV64PC-4 hex55 DSA009112
Text: Turbo IC, Inc. 28LV64 LOW VOLTAGE CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 200 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28LV64
28LV64
28LV64PC-4
hex55
DSA009112
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IDT707278S/L
Abstract: A12L IDT707278
Text: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture Four independent 8K x 16 banks 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns
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16-bit
IDT707278S/L
IDT707278S/L
A12L
IDT707278
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M28C64
Abstract: M28C64-A PDIP28 PLCC32
Text: M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A
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M28C64
M28C64
M28C64-A
M28C64-xxW
PLCC32
PDIP28
M28C64-A
PDIP28
PLCC32
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A12L
Abstract: IDT70V7278
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7278S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 kilobit of memory on chip
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IDT70V7278S/L
16-bit
200mV
A12L
IDT70V7278
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N4078
Abstract: A12L IDT70V7278 F4078
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7278S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 kilobit of memory on chip
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IDT70V7278S/L
16-bit
200mV
N4078
A12L
IDT70V7278
F4078
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M28LV64
Abstract: PDIP28 PLCC32 A6A12
Text: M28LV64 LOW VOLTAGE PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:
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M28LV64
200ns
M28LV64)
PDIP28
PLCC32
TSOP28
M28LV64
PDIP28
PLCC32
A6A12
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d0025
Abstract: No abstract text available
Text: XL28C64B EXEL Microelectronics, Inc. 8K X 8 CMOS Electrically Erasable PROM 6ms Nonvolatile Write Cycle 1 28 VCC A 12 2 27 WE A7 3 26 NC A7 3 26 NC A6 4 25 A8 A6 4 25 A8 A5 5 24 A9 A5 5 24 A9 A4 6 23 A11 A4 6 23 A11 A3 7 22 OE A3 7 22 OE A2 8 21 A10 A2 8 21
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XL28C64B
150ns,
200ns
250ns
120ns
D0025
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M28C64
Abstract: PDIP28 PLCC32
Text: M28C64 PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:
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M28C64
M28C64)
PDIP28
PLCC32
TSOP28
M28C64
PDIP28
PLCC32
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Untitled
Abstract: No abstract text available
Text: M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection • Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A – 2.7 V to 3.6 V for M28C64-xxW
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M28C64
M28C64
M28C64-A
M28C64-xxW
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A12L
Abstract: IDT70V7278 PN100-1
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7278S/L Features ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 kilobit of memory on chip
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IDT70V7278S/L
16-bit
A12L
IDT70V7278
PN100-1
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns
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16-bit
IDT707278S/L
200mV
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M28C64
Abstract: M28C64-A PDIP28 PLCC32
Text: M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection • Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A – 2.7 V to 3.6 V for M28C64-xxW
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M28C64
M28C64
M28C64-A
M28C64-xxW
PLCC32
PDIP28
M28C64-A
PDIP28
PLCC32
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IDT707278S/L
Abstract: A12L IDT707278
Text: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT707278S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns
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IDT707278S/L
16-bit
200mV
IDT707278S/L
A12L
IDT707278
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M28C64 llllM J ilL liM W Iie i 64K 8K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: - 90 ns at 5V - 120ns at 3 V > SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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M28C64
120ns
M28C64-xxW
PDIP28
TSOP28
TSOP28
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Text: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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M28C64
120ns
M28C64-xxW
PDIP28
PLCC32
TSOP28
TSOP28
M28C64
M28C64-W
PDIP28
PLCC32
S028
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28C65 seeq
Abstract: M28C65 A6A12
Text: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • Military and Extended Temperature Range • - 5 5 ° C to + 125° C Operation Military . _ 40° C to + 85° C Operation (Extended) ■ ■ CMOS Technology Low Power • 60 mA Active
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E/M28C65
MD40002B/C
E/M28C65
28C65
MD400026/C
28C65 seeq
M28C65
A6A12
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eeprom 28c65
Abstract: 28C65-250 28C65 28C65 seeq
Text: 28C65 Technology, Incorporated Timer E2 64K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • - 5 5 ° C to +125° C Operation Military • - 4 0 ° C t o +85° C Operation (Extended) • 0° C to +70° C Operation (Commercial)
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28C65
28C65
MD400110/A
eeprom 28c65
28C65-250
28C65 seeq
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Untitled
Abstract: No abstract text available
Text: M39208 Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 100ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39208
100ns
TSOP32
M39208
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Untitled
Abstract: No abstract text available
Text: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron
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E/M28C64
E/M28C64
M28C64
MD400001/D
28C64
125-C
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seeq 28C64
Abstract: 8c643 28C64 EEPROM 28C64 plcc 28C64-250 28C64 military eeprom+28c64
Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time a Byte Write Mode ■ Write Cycle Completion Indication
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28C64
28C64
MD400004/D
seeq 28C64
8c643
28C64 EEPROM
28C64 plcc
28C64-250
28C64 military
eeprom+28c64
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28c64 military
Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
Text: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range
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28C64
0106/A
28C64
MD400106/A
28c64 military
28C64 plcc
28c64-200
28C64 EEPROM
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KM28C64-20
Abstract: KM28C65-25 KM28C64-25 SAMSUNG KM28C64 km28c64
Text: KM28C64/KM28C65 CMOS EEPROM 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64/KM28C65: Commercial — KM28C64I/KM28C65I: Industrial • Simple Byte Write — Single TTL Level Write Signal — Latched Address and Data
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KM28C64/KM28C65
KM28C64/KM28C65:
KM28C64I/KM28C65I:
KM28C65)
32-byte
200ns
30mA--
KM28C64/C65
KM28C64-20
KM28C65-25
KM28C64-25
SAMSUNG KM28C64
km28c64
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Text: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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M28C64
120ns
M28C64-xxW
M28C64
M28C64-W
TSOP28
TSOP28
PDIP28
PLCC32
S028
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Untitled
Abstract: No abstract text available
Text: IMAGE UNAVAILABLE ^DDMt.^7 OSt.3170 TE? • XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches, high voltage generators and supplemental inadvertent
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XL28C64
64-byte
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