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    Balluff Inc BCC0A6Y (ALTERNATE: BCC A55A-0000-20-RN028-020)

    Connector/cable, Male receptacle 1 1/8 in. , 2.00 m | Balluff BCC0A6Y
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    RS BCC0A6Y (ALTERNATE: BCC A55A-0000-20-RN028-020) Bulk 1
    • 1 $112.22
    • 10 $112.22
    • 100 $112.22
    • 1000 $112.22
    • 10000 $112.22
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    A6YA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET N SOT-23

    Abstract: Diode SOT-23 marking 27 ST3006SRG Power MOSFET N-Channel sot-23 marking 54 sot23 a6ya sot-23 MARKING CODE 54 N mosfet sot-23 N Channel sot23 sot-23 MARKING CODE NC
    Text: ST3006SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3006SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST3006SRG ST3006SRG OT-23 OT-23 MOSFET N SOT-23 Diode SOT-23 marking 27 Power MOSFET N-Channel sot-23 marking 54 sot23 a6ya sot-23 MARKING CODE 54 N mosfet sot-23 N Channel sot23 sot-23 MARKING CODE NC

    a6ya

    Abstract: ST3406
    Text: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST3406 ST3406 OT-23-3L OT-23-3L a6ya

    Untitled

    Abstract: No abstract text available
    Text: ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST3406SRG ST3406SRG OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST3406 ST3406 OT-23-3L OT-23-3L

    M51V

    Abstract: hu7w M3900 1/160-N D-7988 XELTEK TQFP 100 pin ic MACH435 1086H CIC-144QF
    Text: •■m H H I Programming Support & Tools »EY O N D PER FO R M A N TE VANTIS APPROVED PROGRAMMERS1 For more information on the products listed below, please consult a local Vantis sales office. Manufacturer Advin 1050-L E. Duane Ave. Sunnyvale, CA 94086 408 243-7000


    OCR Scan     		PDF 1050-L D-7988 AL71LT, D-6798 M51V hu7w M3900 1/160-N XELTEK TQFP 100 pin ic MACH435 1086H CIC-144QF