zl58
Abstract: marking 3L2 diode DIODE 3L2 abb CA5-10 AF460 CAL18-11 AF145 WB75-A ABB MCCB 160 VM750H
Text: 1 e lin e th rs ss acto o r t Ac con 1 Accessories for A/AF/AL & AE contactors Auxiliary contact blocks – Standard Maximum number of contact blocks Positioning 4 blocks: A9 – A26 AE9 – AE26 Front mounting AL9 – AL26 single pole 5 blocks: A30, A40, AE30, AE40, AL30, AL40
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AE110
AF110
CAL5-11
CA5-10
A26-40-00
A40-30-10
AL40-30-10
AE9-AE45
zl58
marking 3L2 diode
DIODE 3L2
abb CA5-10
AF460
CAL18-11
AF145
WB75-A
ABB MCCB 160
VM750H
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Untitled
Abstract: No abstract text available
Text: OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E − SEPTEMBER 2003 − REVISED MAY 2008 6.5MHz, 585µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES D D D D D D D D DESCRIPTION LOW OFFSET: 5mV max LOW IB: 10pA (max) HIGH BANDWIDTH: 6.5MHz RAIL-TO-RAIL INPUT AND OUTPUT
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OPA373,
OPA2373
OPA374
OPA2374,
OPA4374
SBOS279E
OPAx373
OT23-5,
OT23-6,
OT23-8
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PDF
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Untitled
Abstract: No abstract text available
Text: OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E − SEPTEMBER 2003 − REVISED MAY 2008 6.5MHz, 585µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES D D D D D D D D DESCRIPTION LOW OFFSET: 5mV max LOW IB: 10pA (max) HIGH BANDWIDTH: 6.5MHz RAIL-TO-RAIL INPUT AND OUTPUT
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Original
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OPA373,
OPA2373
OPA374
OPA2374,
OPA4374
SBOS279E
OPAx373
OT23-5,
OT23-6,
OT23-8
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PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321321, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit, the µPD44321321 is a 1,048,576-word by 32-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit,
PD44321321
576-word
32-bit
PD44321361
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PDF
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Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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128Mb
144Mb
HS032N02E
HS032N02D
HS032N02C
HS032N02B
HS032E02E
HS032E02D
HS032E02C
HS032E02B
Device marking code B12 B13 B14 B15 B16
MARKING b56
Device marking code B52
marking A78
a80 marking code
marking code B49
a64 marking code
A45 interface
marking code B38
HS032E02B
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marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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256MB
288Mb
HS256N08E
HS256N08D
HS256N08C
HS256N08B
HS256E08E
HS256E08D
HS256E08C
marking code B49
MARKING b56
marking A71
marking A46 B36
Device marking code B12 B13 B14 B15 B16
a80 marking code
a64 marking code
marking code B38
A45 interface
A77 marking
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322181, 44322321, 44322361 32M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD44322181 is a 2,097,152-word by 18-bit, the µPD44322321 is a 1,048,576-word by 32-bit and the µPD44322361 is a 1,048,576-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using
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PD44322181,
32M-BIT
PD44322181
152-word
18-bit,
PD44322321
576-word
32-bit
PD44322361
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PDF
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Untitled
Abstract: No abstract text available
Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
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PDF
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx49G
128MB
128MB,
HYR163249G-653
HYR163249G-840
HYR166449G-653
HYR166449G-845
A17 INFINEON
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A74 marking
Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
A74 marking
a80 marking code
MS18R3266AH0-CT9
a74 marking code
diode code B74
marking A32
marking code B38
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
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a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a74 marking code
MARKING B82
MARKING B83
a80 marking code
B11 marking code
Device marking code B12 B13 B14 B15 B16
marking A45
a64 marking code
A79 marking code
a86 diode
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PDF
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
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PDF
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marking B44
Abstract: DH0 165
Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V
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MS18R1622
256/288Mbit
16Mx18)
288Mb
16K/32ms
marking B44
DH0 165
|
PDF
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Untitled
Abstract: No abstract text available
Text: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828DR
128Mb
8Mx16)
16K/32ms
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PDF
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a74 marking code
Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning
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MS18R1622
256/288Mbit
288Mbit
1066MHz-35
16Mx18)
288Mb
16K/32ms
a74 marking code
A37 diode
marking .A55
transistor marking A21
256-288 MBit Direct RDRAM
MS18R1622AH0-CK8
MS18R1624AH0-CK8
a92 614
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b41 Marking
Abstract: No abstract text available
Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
b41 Marking
|
PDF
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A76 MARKING CODE
Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
A76 MARKING CODE
a77 package marking
a80 marking code
marking A32
marking A45
marking code B38
MR18R162WEG0-CM8
MARKING B17
MARKING CODE B82
marking a86
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PDF
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transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
transistor marking A21
a74 marking code
b82 400
B83 004
marking B44
MARKING CODE b48
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PDF
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Untitled
Abstract: No abstract text available
Text: MS16R1622 4/8 AF0-CK8 Preliminary Revision History Version 1.0 (July 2001) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Page 0 Rev.1.0 July 2001 MS16R1622(4/8)AF0-CK8 Preliminary (16Mx16)*2(/4/8)pcs Rambus RIMM based on 256Mb A-die, 32s banks,16K/32ns Ref, 2.5V
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MS16R1622
16Mx16)
256Mb
16K/32ns
|
PDF
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288Mb
256/288Mb
600MHz
711MHz
800MHz
A23 851 diode
diode 910 b34
HYMR225616
HYMR26416
256MX16
H-745
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PDF
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Untitled
Abstract: No abstract text available
Text: MS18R1624 8 MN0-CK8 Preliminary Revision History Version 1.0 (May 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(M-die) base RIMM Datasheet. Version 1.1 (August 2001) * Update based on the latest Rambus RIMM Datasheet Page No. 7 Change Description
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MS18R1624
256/288Mbit
16Mx18)
288Mb
16K/32ns
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H-840
Abstract: H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose
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256/288Mb
H-840
H-745
|
PDF
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