Untitled
Abstract: No abstract text available
Text: Rectangular Connectors High Density Standard Module HDSM Connectors Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Basic design offers 38, 78, 120, 152, 200, 304, and 400 contact designs High reliability twist pin and socket per MIL-DTL-83513 and MIL-DTL-55302
|
Original
|
PDF
|
MIL-DTL-83513
MIL-DTL-55302
positionW-16878
|
Untitled
Abstract: No abstract text available
Text: OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E − SEPTEMBER 2003 − REVISED MAY 2008 6.5MHz, 585µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES D D D D D D D D DESCRIPTION LOW OFFSET: 5mV max LOW IB: 10pA (max) HIGH BANDWIDTH: 6.5MHz RAIL-TO-RAIL INPUT AND OUTPUT
|
Original
|
PDF
|
OPA373,
OPA2373
OPA374
OPA2374,
OPA4374
SBOS279E
OPAx373
OT23-5,
OT23-6,
OT23-8
|
Untitled
Abstract: No abstract text available
Text: OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E − SEPTEMBER 2003 − REVISED MAY 2008 6.5MHz, 585µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES D D D D D D D D DESCRIPTION LOW OFFSET: 5mV max LOW IB: 10pA (max) HIGH BANDWIDTH: 6.5MHz RAIL-TO-RAIL INPUT AND OUTPUT
|
Original
|
PDF
|
OPA373,
OPA2373
OPA374
OPA2374,
OPA4374
SBOS279E
OPAx373
OT23-5,
OT23-6,
OT23-8
|
Untitled
Abstract: No abstract text available
Text: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84 -40 qC TO RELATIVE HUMIDITY 40 % TO 60 qC (2) 95 % RH MAX. (3)
|
Original
|
PDF
|
a77a84
b77b84
a9a76
b9b76
|
Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
|
Original
|
PDF
|
128Mb
144Mb
HS032N02E
HS032N02D
HS032N02C
HS032N02B
HS032E02E
HS032E02D
HS032E02C
HS032E02B
Device marking code B12 B13 B14 B15 B16
MARKING b56
Device marking code B52
marking A78
a80 marking code
marking code B49
a64 marking code
A45 interface
marking code B38
HS032E02B
|
Untitled
Abstract: No abstract text available
Text: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84 -10 qC TO RELATIVE HUMIDITY 40 % TO 60 qC (2) 95 % RH MAX. (3)
|
Original
|
PDF
|
a77a84
b77b84
a9a76
b9b76
|
EIA-364-65
Abstract: EIA364-65 EIA-364-23 EIA-364-13 EIA-364-09 EIA-364-20 EIA-364-27 EIA-364-31
Text: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 1 50 V AC VOLTAGE RATING 85 qC 0.75A CURRENT No.a1㨪a8,a77㨪a84 STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE -40 qC TO 60 qC (2) 95 % RH MAX. (3) RELATIVE HUMIDITY
|
Original
|
PDF
|
a77a84
b77b84
a9a76
b9b76
EIA-364-23]
EIA-364-65
EIA364-65
EIA-364-23
EIA-364-13
EIA-364-09
EIA-364-20
EIA-364-27
EIA-364-31
|
marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
|
Original
|
PDF
|
256MB
288Mb
HS256N08E
HS256N08D
HS256N08C
HS256N08B
HS256E08E
HS256E08D
HS256E08C
marking code B49
MARKING b56
marking A71
marking A46 B36
Device marking code B12 B13 B14 B15 B16
a80 marking code
a64 marking code
marking code B38
A45 interface
A77 marking
|
Untitled
Abstract: No abstract text available
Text: V ish ay I nt e rt e chnolo g y, I nc . I INNOVAT AND TEC O L OGY PRV4 N HN potentiometer O 19 62-2012 Resistors - High 2 W Power Rating Industrial Potentiometer Key Benefits • • • • • • • • High 2 W power rating Offers US bushing threads and a fully-sealed IP67 package
|
Original
|
PDF
|
operat01
14-Feb-11
DocumentVMN-PT0057-1202
|
Untitled
Abstract: No abstract text available
Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
|
Original
|
PDF
|
MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
|
MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
|
Original
|
PDF
|
MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
|
HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
|
Original
|
PDF
|
HYR16xx49G
128MB
128MB,
HYR163249G-653
HYR163249G-840
HYR166449G-653
HYR166449G-845
A17 INFINEON
|
a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
|
a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a74 marking code
MARKING B82
MARKING B83
a80 marking code
B11 marking code
Device marking code B12 B13 B14 B15 B16
marking A45
a64 marking code
A79 marking code
a86 diode
|
|
a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
|
Untitled
Abstract: No abstract text available
Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning
|
Original
|
PDF
|
MS18R1622
256/288Mbit
1066MHz-35
16Mx18)
288Mb
16K/32ms
|
marking B44
Abstract: DH0 165
Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V
|
Original
|
PDF
|
MS18R1622
256/288Mbit
16Mx18)
288Mb
16K/32ms
marking B44
DH0 165
|
Untitled
Abstract: No abstract text available
Text: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR16R0828DR
128Mb
8Mx16)
16K/32ms
|
a74 marking code
Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning
|
Original
|
PDF
|
MS18R1622
256/288Mbit
288Mbit
1066MHz-35
16Mx18)
288Mb
16K/32ms
a74 marking code
A37 diode
marking .A55
transistor marking A21
256-288 MBit Direct RDRAM
MS18R1622AH0-CK8
MS18R1624AH0-CK8
a92 614
|
b41 Marking
Abstract: No abstract text available
Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
b41 Marking
|
A76 MARKING CODE
Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
A76 MARKING CODE
a77 package marking
a80 marking code
marking A32
marking A45
marking code B38
MR18R162WEG0-CM8
MARKING B17
MARKING CODE B82
marking a86
|
transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
|
Original
|
PDF
|
MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
transistor marking A21
a74 marking code
b82 400
B83 004
marking B44
MARKING CODE b48
|
Untitled
Abstract: No abstract text available
Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V
|
Original
|
PDF
|
MS18R1622
288Mbit
16Mx18)
288Mb
16K/32ms
|
MARKING CODE 11gb
Abstract: No abstract text available
Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
|
Original
|
PDF
|
MR18R326GAG0
256/288Mbit
32Mx18)
16pcs
576Mb
32K/32ms
MARKING CODE 11gb
|