R1610N
Abstract: r161 R1610 R1612 30 position rotary potentiometers 5k R1610k
Text: Rotary Potentiometers R14 Size Mechanical characteristics: Total rotational angle 300 Rotational torque 2 ~ 20mN.m 20~200gf.cm without bushing 0.5N.m(5kgf.cm) with bushing 0.6N.m(6kgf.cm) Rotary Potentiometers 5 Rotation stopper strength Push pull strength
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200gf
L/30mmp-p
AC/20V
100Mage
R1612N-
R1613N-
R1610N
r161
R1610
R1612
30 position rotary
potentiometers 5k
R1610k
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a7x transistor
Abstract: aen6 MSP430 A7X ad AEN.5 ACTL12 MDB Resistor
Text: MSP430 Family 15 Analog-To-Digital Converter Analog-To-Digital Converter Topic Page 15.1 Overview 15-3 15.2 Analog-to-Digital Operation 15-5 15.3 ADC Control Registers 15-15 15 15-1 Analog-To-Digital Converter 15 15-2 MSP430 Family MSP430 Family Analog-To-Digital Converter
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MSP430
12-bit
Bit11
a7x transistor
aen6
A7X ad
AEN.5
ACTL12
MDB Resistor
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a7y transistor
Abstract: RASH soj20 Package UD61256 tsu a7y
Text: UD61256 Maintenance only 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time
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UD61256
PDIP16
SOJ20/26
UD61256
D-01109
D-01101
a7y transistor
RASH
soj20 Package
tsu a7y
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transistor a7y
Abstract: a7y transistor tsu a7y a7x transistor RASH soj20 Package ud61256 NS10000 tca 680 UD61256DC
Text: Maintenance only UD61256 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time
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UD61256
PDIP16
SOJ20/26
UD61256
D-01109
D-01101
transistor a7y
a7y transistor
tsu a7y
a7x transistor
RASH
soj20 Package
NS10000
tca 680
UD61256DC
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RASH
Abstract: transistor a7y UD61466
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
RASH
transistor a7y
UD61466
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104 k5k capacitor
Abstract: k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx
Text: IBM Mobile Systems ThinkPad Computer Hardware Maintenance Manual August 2004 This manual supports: ThinkPad T40/T40p, T41/T41p, T42/T42p MT 2373/2374/2375/2376/2378/2379 ThinkPad Dock II (MT 2877) Note Before using this information and the product it supports, be sure to read the general information
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T40/T40p,
T41/T41p,
T42/T42p
T42/T42p
92P2252
104 k5k capacitor
k5k 104 capacitor
104 capacitor k5k
ibm thinkpad t42
bmdc
ibm thinkpad t40
ibm t42
M1E wireless
ibm t40 lcd
1802 dfx
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UD61464DC
Abstract: 65536X4 RASH UD61464 RW100-50 A7X k
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
UD61464DC
65536X4
RASH
UD61464
RW100-50
A7X k
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a7y transistor
Abstract: a7x transistor transistor a7y UD61464 tv pattern generator RASH UD61464DC pd 223
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
a7y transistor
a7x transistor
transistor a7y
UD61464
tv pattern generator
RASH
UD61464DC
pd 223
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a7y transistor
Abstract: RASH UD61466 A7X k
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
a7y transistor
RASH
UD61466
A7X k
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A970 GR
Abstract: A950 transistor a970 transistor a950 A970 A970 GR 41 a970 transistor a7x transistor a950 o transistor a950 transistor datasheet
Text: CXD3048R CD Digital Signal Processor with Built-in Digital Servo + Shock-proof Memory Controller + Digital High & Bass Boost Description The CXD3048R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo, high & bass boost, shock-proof memory controller, 1-bit DAC and
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CXD3048R
CXD3048R
LQFP-120P-L051
P-LQFP120-16x16-0
A970 GR
A950
transistor a970
transistor a950
A970
A970 GR 41
a970 transistor
a7x transistor
a950 o transistor
a950 transistor datasheet
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Untitled
Abstract: No abstract text available
Text: KA711/I DUAL COMPARATOR DUAL HIGH-SPEED DIFFERENTIAL COMPARATOR T h e KA711/1 contain tw o voltage com parators w ith the separate differential inputs, a com m on output and provi sion fo r strobing each side independently. T h e device features high accuracy, fa st response, low offset voltage,
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KA711/I
KA711/1
KA711:
KA711I:
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a7x transistor
Abstract: diode t25 4 F0
Text: 6N135 6N136 Infineon :hno I High-Speed TRIOS Optocoupler FEA TU R ES Isolation Test Voltage: 530 0 V RMS T T L C om patible H igh Bit R ates: 1.0 M bit/s H igh C om m o n -M o d e In terfe re n c e Im m unity B an dw idth 2 .0 M H z O p en -C o lle c to r O u tput
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6N135
6N136
1-888-lnfineon
6N135/136
a7x transistor
diode t25 4 F0
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Untitled
Abstract: No abstract text available
Text: Contents Pin Pin Functions. 1 Block Diagram. 2
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S-29530A
9630A
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sis 6326
Abstract: No abstract text available
Text: SFH6325 SFH6326 Infineon High-Speed Dual Optocoupler Dim ensions in in ches mm FEATURES • Isolation Test Voltage: 5300 V RMS • TTL Compatible • Bit Rates: 1.0 MBit/s • High Common-mode Transient Immunity • Bandwidth 2.0 MHz • Open-Collector Output
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SFH6325
SFH6326
E52744
1-888-lnfineon
SFH6325/SFH6326
sis 6326
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Untitled
Abstract: No abstract text available
Text: KM736V790 128Kx36 Synchronous SRAM Document Tills 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft December. 15. 1997 Prelim inary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2
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KM736V790
128Kx36
128Kx36-Bit
14ELECTRONICS
100-TQFP-1420A
15ELECTRONICS
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Untitled
Abstract: No abstract text available
Text: KM29V16000ATS_ FLASH MEMORY Document Tills 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBERS p a ra m e te r: 5ms Typ. —» 2ms(Typ.).
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KM29V16000ATS
264-Byte
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Untitled
Abstract: No abstract text available
Text: Contents Features. 1 Pin Assignm ent. 1 Pin
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Untitled
Abstract: No abstract text available
Text: Contents Features. 1 Pin A ssignm ent. 1 Pin F unctions. 1 Block Diagram. 2
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S-29530A
9630A
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D0243
Abstract: No abstract text available
Text: FLASH MEMORY KM29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Celi Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29V32000TS/RS
250us
D0243
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Untitled
Abstract: No abstract text available
Text: Ml IVnO DATA SHEET SEPTEMBER 1988 HM 65231 2K x 8 C M O S DUAL PORT RAM FEATURES . ONE SEPARATE ADDRESS/DATA PORT, ONE MULTIPLEXED ADDRESS/DATA PORT . 3 PROGRAMMABLE ARBITRATION MODES ON CHIP . INT AND BUSY OUTPUTS . FULLY STATIC OPERATION . TTL COMPATIBLE INPUT/OUTPUT
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HM65231isa
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ad2y
Abstract: AD7Y A10y hm3 65231 mhs p-8088
Text: IH M A f l H S DATA SHEET SEPTEMBER 1988 HM 65231 2K x 8 C M O S DUAL PORT RAM FEATURES . HIGH SPEED, FAST ACCESS TIME : COMMERCIAL : 80 ns max INDUSTRIAL : 100 ns max MILITARY: 120 ns max . STANDBY CURRENT: 3 mA . OPERATING SUPPLY CURRENT: 60 mA max . BATTERY BACK UP OPERATION :
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35C102
Abstract: No abstract text available
Text: Contents Features. 1 Pin Assignment.
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S93C66D
Abstract: S93C46d S93C56D S93C56 93c 66m S-93C56ADFJ
Text: Contents Features. 1 Pin A ssignm Pin F un ctions. 1 Block Diagram . 2
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Untitled
Abstract: No abstract text available
Text: Contents F e a tu re s . 1 Pin A ssignm en t.
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