PI74ST1G125TEX
Abstract: No abstract text available
Text: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V – 3.6V
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PI74ST1G125
PI74ST1G125
PS8521H
PI74ST1G125TX
PI74ST1G125TEX
PI74ST1G125CX
PI74ST1G125CEX
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Untitled
Abstract: No abstract text available
Text: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V –3.6V
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PI74ST1G125
PI74ST1G125
PI74ST
MO-203AA
PS8521E
PI74ST1G125TX
PI74ST1G125CX
PS8521E
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Untitled
Abstract: No abstract text available
Text: PI74STX1G02 SOTiny Gate STX 2-Input NOR Description Features • • • • • High-speed: tPD = 5.0ns typical into 15pF @ 5V VDD Broad Operating Range: VDD = 1.65V – 5.5V Power down high-impedance inputs/outputs High output drive: ±24mA at 3V VDD
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PI74STX1G02
PI74STX1GT02
PI74STX
PS8557C
MO-203B/AA
PI74STX1G02TEX
PI74STX1G02CEX
OT-23,
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63 sot23 6pin
Abstract: PI74STX1GU04CEX
Text: PI74STX1GU04 SOTinyTM Gate STX Unbuffered Inverter Description Features • • • • • • – – – High-speed: tPD = 2.6ns typical into 50pF @ 5V VDD Unbuffered Output Broad operating range: VDD = 1.65V – 5.5V Power down high-impedance inputs/outputs
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PI74STX1GU04
PI74STX1GU04
PD-2074
PI74STX1GU04TEX
PI74STX1GU04CEX
PI74STX1GU04ZRE
PS8562E
63 sot23 6pin
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AF4415P
Abstract: 4415P 4415-P
Text: AF4415P P-Channel 20-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability These miniature surface mount MOSFETs utilize
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AF4415P
015x45
AF4415P
4415P
4415-P
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si9934
Abstract: No abstract text available
Text: Si9934DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si9934DY
si9934
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Untitled
Abstract: No abstract text available
Text: PSoC 3: CY8C38 Family Datasheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C38 family offers a modern method of signal acquisition, signal
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CY8C38
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DIODE marking S4 06
Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Text: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDW6923
DIODE marking S4 06
MOSFET TSSOP-8
S4 DIODE schottky
2502P
CBHK741B019
F63TNR
FDW2502P
FDW6923
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2504P diode
Abstract: h9942 FDW2502P 2502P CBHK741B019 F63TNR FDW2504P
Text: FDW2504P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2504P
2504P diode
h9942
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2504P
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DIODE marking S4 97
Abstract: No abstract text available
Text: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6963DQ
DIODE marking S4 97
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2506p
Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2506P
2506p
diode s4 53a
2506p marking
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2506P
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FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW2521C h994 2521c fairchild
Text: FDW2521C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FDW2521C
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2521C
h994
2521c fairchild
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Untitled
Abstract: No abstract text available
Text: DATASHEET 19MHz Radiation Hardened 40V Quad Rail-to-rail Input-output, Low-power Operational Amplifiers ISL70444SEH Features The ISL70444SEH features four low-power amplifiers optimized to provide maximum dynamic range. These op amps feature a unique combination of rail-to-rail operation on
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19MHz
ISL70444SEH
ISL70444SEH
038mm)
FN8411
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sx8733
Abstract: d1al active noise cancellation
Text: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 8 + ADC - SMBUS SMBCLK VDD
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SX8733/SX8743/SX8744
SX8733
SX8743
SX8744
SX8733,
SX8743
SX8744
ISO9001
91/February
d1al
active noise cancellation
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LM86
Abstract: MMBT3906 acs transistor
Text: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 8 + ADC - SMBUS SMBCLK VDD
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SX8733/SX8743/SX8744
SX8733
SX8743
SX8744
ISO9001
91/February
LM86
MMBT3906
acs transistor
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Untitled
Abstract: No abstract text available
Text: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK D2- SMBDAT VDD SX8743 1 3 8 + ADC - SMBUS SMBCLK VDD P3 2 3 P1 4 +- + ADC - SMBUS 7
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SX8733/SX8743/SX8744
SX8733
SX8743
SX8744
ISO9001
91/February
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Untitled
Abstract: No abstract text available
Text: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDI030N06
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LIA SOT23-3
Abstract: No abstract text available
Text: SX8733 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 + ADC - SMBUS 8 SMBCLK VDD 7 SMBDAT P1 SX8744
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SX8733
SX8733
SX8743
SX8744
SX8733,
SX8743
SX8744
ISO9001
LIA SOT23-3
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Untitled
Abstract: No abstract text available
Text: SX8733 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK ALARM 2 D2+ D2- SMBDAT VDD SX8743 1 + + - MUX VSS D1+ D1- 3 + ADC - SMBUS 8 SMBCLK VDD 7 SMBDAT P1 SX8744
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SX8733
SX8733
SX8743
SX8744
SX8733,
SX8743
SX8744
ISO9001
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Untitled
Abstract: No abstract text available
Text: FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS on = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDMS015N04B
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Untitled
Abstract: No abstract text available
Text: SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT General Description Features Fairchild’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,
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SGL50N60RUFD
261ns
O-264
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Untitled
Abstract: No abstract text available
Text: SQM40N10-30 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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SQM40N10-30
AEC-Q101
2002/95/EC
O-263
O-263
SQM40N10-30-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQM120N10-09 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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SQM120N10-09
AEC-Q101
2002/95/EC
O-263
O-263
SQM120N10-09-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQM47N10-24L Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedc
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SQM47N10-24L
AEC-Q101
2002/95/EC
O-263
O-263
SQM47N10-24L-GE3
11-Mar-11
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