Untitled
Abstract: No abstract text available
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
|
PDF
|
2502P
Abstract: FDW2502P
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
2502P
FDW2502P
|
PDF
|
FDW2502PZ
Abstract: No abstract text available
Text: FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502PZ
FDW2502PZ
|
PDF
|
2502P
Abstract: FDW2502P
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
2502P
FDW2502P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
|
PDF
|
2502P
Abstract: FDW2502P
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
2502P
FDW2502P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
|
PDF
|
2502P
Abstract: FDW2502P
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
2502P
FDW2502P
|
PDF
|
FDW2502PZ
Abstract: No abstract text available
Text: FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502PZ
FDW2502PZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
|
PDF
|
2502P
Abstract: CBHK741B019 F63TNR FDW2502P h994
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2502P
h994
|
PDF
|
2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2502PZ
Text: FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502PZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2502PZ
|
PDF
|
2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2502PZ 355mm
Text: FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2502PZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2502PZ
355mm
|
PDF
|
2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
SI6926DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6926DQ
|
PDF
|
|
|
2506p
Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW2506P
2506p
diode s4 53a
2506p marking
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2506P
|
PDF
|
2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
|
Original
|
FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
|
PDF
|
MOSFET TSSOP-8
Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
|
Original
|
FDW2507N
MOSFET TSSOP-8
2502P
2507N
CBHK741B019
F63TNR
FDW2502P
FDW2507N
Fairchild MOSFET TSSOP-8 dual n-channel
|
PDF
|
DIODE S4 75a
Abstract: No abstract text available
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
|
Original
|
FDW2507NZ
DIODE S4 75a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LTC3736-1 Dual 2-Phase, No RSENSETM, Synchronous Controller with Spread Spectrum FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3736-1 is a 2-phase dual synchronous stepdown switching regulator controller with tracking that
|
Original
|
LTC3736-1
550kHz,
16-Lead
28-Lead
10-Pin
37361f
|
PDF
|
Si6435DQ
Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
|
Original
|
Si6435DQ
2502P
CBHK741B019
F63TNR
FDW2502P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory
|
Original
|
LTC3776
LTC3736-1
LTC3737
LTC3831
3776fa
|
PDF
|
diode 8a 600v
Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List
|
Original
|
Power247TM,
diode 8a 600v
4 pin optocoupler
4PIN optocoupler
bidirectional optocoupler toshiba
logic level complementary MOSFET
IGBT gate optocoupler driver for a buck converter
hma121
0.75KW
layout 48 VOLT 150 AMP smps
FET pair n-channel p-channel full bridge
|
PDF
|
FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW252P
Text: FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
|
Original
|
FDW252P
FDW2502P
2502P
CBHK741B019
F63TNR
FDW252P
|
PDF
|
FDW2520C
Abstract: LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8
Text: LTC3736-2 Dual 2-Phase, No RSENSE , Synchronous Controller with Output Tracking DESCRIPTION TM FEATURES n n n n n n n n n n n n n n n n No Current Sense Resistors Required Out-of-Phase Controllers Reduce Required Input Capacitance Tracking Function Wide VIN Range: 2.75V to 9.8V
|
Original
|
LTC3736-2
24-Lead
LTC3808
16-Lead
LTC3809/LTC3809-1
10-Lead
37362fb
FDW2520C
LTC3736-2
LTC3736EGN-2
Si9801DY
TSSOP-8 footprint and soldering sot-23
marking g02 tssop8
flyback pwm tssop8
|
PDF
|
