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    SI6435DQ Price and Stock

    Vishay Siliconix SI6435DQ-T1

    4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI6435DQ-T1 8,903
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    Vishay Siliconix SI6435DQT1

    Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI6435DQT1 41,900
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    Vishay Huntington SI6435DQ-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI6435DQ-T1-E3 20,600
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    Silicon Laboratories Inc SI6435DQ-T1

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    Win Source Electronics SI6435DQ-T1 20,600
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    Vishay Huntington SI6435DQ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI6435DQ 19,245
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    • 100 $0.848
    • 1000 $0.566
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    SI6435DQ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6435DQ Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    Si6435DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6435DQ Vishay Intertechnology P-Channel 30-V (D-S) Rated MOSFET Original PDF

    SI6435DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6435DQ

    Abstract: 2502P CBHK741B019 F63TNR FDW2502P
    Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6435DQ 2502P CBHK741B019 F63TNR FDW2502P

    S-49534

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-49534--Rev. 06-Oct-97 S-49534

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si6435DQ siliconix

    Abstract: Si6435DQ
    Text: Si6435DQ Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.040 @ VGS = -10 V "4.5 0.070 @ VGS = -4.5 V "3.4 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6435DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6435DQ S41471Rev. Si6435DQ siliconix

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si6435DQ

    Abstract: No abstract text available
    Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361

    S-49534

    Abstract: Si6435DQ A244V SI6435
    Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-49534--Rev. 06-Oct-97 S-49534 A244V SI6435

    mosfet Vds 30 Vgs 25

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-47958--Rev. 15-Apr-96 mosfet Vds 30 Vgs 25

    5139 mosfet

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-47958--Rev. 15-Apr-96 5139 mosfet

    Si6435DQ

    Abstract: No abstract text available
    Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6435DQ

    mi4410

    Abstract: MI4435 S39421 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD
    Text: Application Note 9 Using the S39421 as the Primary Control Circuit on a VME Live Insertion Card High availability is a key feature of many types of systems today. Whether the system is a central office switch, a private branch exchange or a server it is important the


    Original     		PDF S39421 These30V MTSF2P03HD MMSF3P02HD MTD20P03HDL2 Si6435DQ Si6415DQ Si4431DY Si4435DY VME64x mi4410 MI4435 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    ltkd

    Abstract: LTC1771EMS8 uu ferrite core LTC1771 LTC1771E LTC1771ES8 LTC1771I LTC1771IS8 Si6447DQ UPS5817
    Text: Final Electrical Specifications LTC1771 Low Quiescent Current High Efficiency Step-Down DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1771 is a high efficiency current mode stepdown DC/DC controller that draws as little as 10µA DC


    Original     		PDF LTC1771 LTC1622 LTC1624 100mA, OT-23 LT1763 500mA, LTC1772 OT-23, 1771i ltkd LTC1771EMS8 uu ferrite core LTC1771 LTC1771E LTC1771ES8 LTC1771I LTC1771IS8 Si6447DQ UPS5817

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    P-channel power mosfet SO-8 30V 9.2A 20

    Abstract: Siliconix 100v P-Channel DPAK P-channel power mosfet SO-8 P-CHANNEL 45A TO-247 POWER MOSFET P-channel N-Channel power mosfet SO-8 Vishay Siliconix IRF7606 D-PAK MTSF3N03HD
    Text: Summit Microelectronics, Inc., 300 Orchard City Drive Campbell, CA 95008. Phone 408-378-6461 www.summitmicro.com Suggested Power MOSFET Switches for Hot-Swap Controller ICs Nov-99 N-Channel Part Number Manufacturer V BR DSS RDS(on) @ VGS=10V ID cont. @ 25°C


    Original     		PDF Nov-99 IRF7603 IRF7413 IRL3803S IRFR110 IRFR120 IRFR120N IRF3710S RFD20N03SM IRF7606 P-channel power mosfet SO-8 30V 9.2A 20 Siliconix 100v P-Channel DPAK P-channel power mosfet SO-8 P-CHANNEL 45A TO-247 POWER MOSFET P-channel N-Channel power mosfet SO-8 Vishay Siliconix IRF7606 D-PAK MTSF3N03HD

    S39421

    Abstract: Hot Swap Controller hot swap motorola application note an-1 CR injector driver VME 5v 3.3v timing sequence
    Text: SUMMIT S39421 MICROELECTRONICS, Inc. Hot Swap Voltage Controller FEATURES • Full Voltage Control for Hot Swap Applications – Card Insertion Detection – Platform Voltage Detection – Card Voltage Sequencing – 5 Volt, 12 Volt and 3.3 Volt • 12 Volt FET Enable Outputs


    Original     		PDF S39421 50V/Sec S39421 Hot Swap Controller hot swap motorola application note an-1 CR injector driver VME 5v 3.3v timing sequence

    S14435

    Abstract: S14435DY S1443 70513 51361
    Text: Temic SÌ9435DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y V D S V -30 r DS(on) (£2) I d (A ) 0.055 @ VGs = -10 V ±5.1 0.07 @ VGs = -6 V ±4.6 0.105 @ V<3s = -4.5 V ±3.6 Recom m ended upgrade: S14435DY or Si4953D Y Lower pro file ¡smaller size see Si6435DQ


    OCR Scan     		PDF 9435DY S14435DY Si4953D Si6435DQ S-51361--Rev. 18-Dec-96 S14435 S1443 70513 51361