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Rochester Electronics LLC SI4953DY MOSFET 2P-CH 30V 4.9A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4953DY	Bulk	2,500		358	1 - 10 - 100 - 1000 $0.84 10000 $0.84	Buy Now
onsemi SI4953DY Transistor MOSFET Array Dual P-Channel 30V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4953DY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4953DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
FAIRCHILD SI4953DY SI4953DY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SI4953DY		2,500		373	1 - 10 - 100 - 1000 $1.0073 10000 $1.0073	Buy Now
Vishay Intertechnologies SI4953DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4953DY-T1		2,771			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation SI4953DY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4953DY		2,573			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SI4953DY		2,500		1	1 - 10 - 100 $0.8058 1000 $0.6688 10000 $0.5963	Buy Now

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SI4953D Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4953DY	Fairchild Semiconductor	Dual P-Channel Enhancement Mode MOSFET	Original	PDF
SI4953DY	Fairchild Semiconductor	Dual P-Channel Enhancement Mode MOSFET	Original	PDF
Si4953DY	Fairchild Semiconductor	Dual P-Channel Enhancement Mode MOSFET	Original	PDF
Si4953DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI4953DY	Vishay Telefunken	Dual P-channel 30-v(d-s) Mosfet	Original	PDF
SI4953DY_NL	Fairchild Semiconductor	Dual P-Channel Logic Level PowerTrench MOSFET	Original	PDF
Si4953DY-T1	Vishay Siliconix	Dual P-Channel 30-V(D-S) MOSFET	Original	PDF

SI4953D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	Si4953DY	PDF
Si64 Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94 Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96	PDF
Si9947DY Abstract: Si4947DY Si4953DY Si6955DQ si6955 Contextual Info: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ	Original	Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96 si6955	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Contextual Info: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)	OCR Scan	Si4953DY S-49534â 06-Oct-97 DD17flflT	PDF
Si4953DY Contextual Info: Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-47958--Rev. 15-Apr-96	PDF
Si9430DY Abstract: Si4435DY Si4953DY Si6435DQ Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
S-49534 Abstract: Si4953DY Contextual Info: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-49534--Rev. 06-Oct-97 S-49534	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361 Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361	PDF
Si4953DY Contextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	Si4953DY	PDF
Si4953DY Contextual Info: Si4953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.053 @ VGS = -10 V "4.9 0.095 @ VGS = -4.5 V "3.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET	Original	Si4953DY S42234Rev.	PDF

Si4953DY Contextual Info: Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-47958--Rev. 15-Apr-96	PDF
Si9430DY Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 SI9430DY equivalent	PDF
Si4953DY Abstract: Si4953DY-T1 Contextual Info: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1	Original	Si4953DY Si4953DY-T1 08-Apr-05	PDF
Si4953DY Abstract: Si4953DY-T1 Contextual Info: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1	Original	Si4953DY Si4953DY-T1 18-Jul-08	PDF
74226 Abstract: RG154 Si4953DY Si4953ADY Si4953ADY-T1-E3 Si4953DY-T1 Si4953DY-T1-E3 Contextual Info: Specification Comparison Vishay Siliconix Si4953ADY vs. Si4953DY Description: Package: Pin Out: Dual P-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4953ADY-T1-E3 Replaces Si4953DY-T1-E3 Si4953ADY-T1-E3 Replaces Si4953DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4953ADY Si4953DY Si4953ADY-T1-E3 Si4953DY-T1-E3 Si4953DY-T1 06-Nov-06 74226 RG154	PDF
Contextual Info: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V "4.9 0.095 @ VGS = - 4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-49534--Rev. 06-Oct-97	PDF
Contextual Info: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET	Original	Si4953DY S-49534--Rev. 06-Oct-97	PDF
Top side marking AHQ Abstract: Si4953DY Contextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	Si4953DY Top side marking AHQ	PDF
Si4953DY Abstract: Si4953DY-T1 Contextual Info: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1	Original	Si4953DY Si4953DY-T1 S-31726--Rev. 18-Aug-03	PDF
S14435 Abstract: S14435DY S1443 70513 51361 Contextual Info: Temic SÌ9435DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y V D S V -30 r DS(on) (£2) I d (A ) 0.055 @ VGs = -10 V ±5.1 0.07 @ VGs = -6 V ±4.6 0.105 @ V<3s = -4.5 V ±3.6 Recom m ended upgrade: S14435DY or Si4953D Y Lower pro file ¡smaller size see Si6435DQ	OCR Scan	9435DY S14435DY Si4953D Si6435DQ S-51361--Rev. 18-Dec-96 S14435 S1443 70513 51361	PDF

SI4953D Search Results

SI4953D Price and Stock

Rochester Electronics LLC SI4953DY

onsemi SI4953DY

FAIRCHILD SI4953DY

Vishay Intertechnologies SI4953DY-T1

Fairchild Semiconductor Corporation SI4953DY

SI4953D Datasheets (7)

SI4953D Datasheets Context Search

Si64

Si4435DY

Si9947DY

Si4435DY

Si4953DY

Si9430DY

Si4435DY

S-49534

Si4435DY

Si4435DY

Si4953DY

Si4953DY

Si4953DY

Si9430DY

Si4953DY

Si4953DY

74226

Top side marking AHQ

Si4953DY

S14435