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    SI9435DY Price and Stock

    onsemi SI9435DY

    MOSFET P-CH 30V 5.3A 8SOIC
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    DigiKey SI9435DY Reel 2,500
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    SI9435DY Cut Tape 1
    • 1 $0.7
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    Win Source Electronics SI9435DY 2,600
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    • 1000 $1.884
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    Vishay Intertechnologies SI9435DY

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    Bristol Electronics SI9435DY 3,686
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    Quest Components SI9435DY 2,948
    • 1 $2.5
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    SI9435DY 592
    • 1 $1.5
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    Vishay Siliconix SI9435DY

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    Bristol Electronics SI9435DY 3,070
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    SI9435DY 2,627
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    Quest Components SI9435DY 1,581
    • 1 $1.5
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    SI9435DY 1,217
    • 1 $0.9
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    SI9435DY 524
    • 1 $2.56
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    SI9435DY 400
    • 1 $1.3
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    SI9435DY 399
    • 1 $1.365
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    SI9435DY 74
    • 1 $3.9123
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    • 100 $2.6082
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    Vishay Siliconix SI9435DY-T1

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    Bristol Electronics SI9435DY-T1 2,972
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    Quest Components SI9435DY-T1 2,413
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    Vishay Intertechnologies SI9435DY-T1

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    Bristol Electronics SI9435DY-T1 1,064
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    Quest Components SI9435DY-T1 851
    • 1 $2.1
    • 10 $2.1
    • 100 $1.05
    • 1000 $0.84
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    SI9435DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI9435DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    Si9435DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI9435DY Kexin P-Channel Enhancement Mode MOSFET Original PDF
    Si9435DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9435DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style SO-8 Scan PDF
    SI9435DY-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF

    SI9435DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8 pin ic 9435

    Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


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    PDF Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435

    SI9435BDY-E3

    Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1
    Text: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1


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    PDF Si9435BDY Si9435DY Si9435BDY-E3 Si9435BDY-T1 Si9435DY-T1 Si9435BDY-T1-E3

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


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    PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si9435DY

    Abstract: No abstract text available
    Text: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original
    PDF Si9435DY S-00652--Rev. 27-Mar-00

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original
    PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET SI9435DY • Features ● 5.3 A, -30 V. RDS ON = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)


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    PDF SI9435DY

    inductor 100uH

    Abstract: capacitor 104 ceramic 10uf 25V capacitor CAPACITOR 0805 RESISTOR 1210 ceramic capacitor 104 Si9435DY 104 ceramic capacitor EP05Q03L Ceramic Capacitors 104
    Text: Server +12V INPUT 1 C1 0.47uF 2 R2 10k C2 27nF VL EXT MAX1846 3 C3 220pF 4 CS 8 COMP PGND REF FB GND 5 P1 Si9435DY 55mOhm 9 FREQ R1 150k 300kHz C4 0.1uF 1846-12b RWY 08/10/01 10 V+ C5 10uF 25V CER 7 6 L1 100uH DS5022P -104 D1 EP05 Q03L R3 0.1 0.25W R4 97.6k


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    PDF MAX1846 220pF Si9435DY 55mOhm 300kHz) 1846-12b 100uH DS5022P 250mA inductor 100uH capacitor 104 ceramic 10uf 25V capacitor CAPACITOR 0805 RESISTOR 1210 ceramic capacitor 104 104 ceramic capacitor EP05Q03L Ceramic Capacitors 104

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original
    PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


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    PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361

    Untitled

    Abstract: No abstract text available
    Text: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


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    PDF Si9435DY 08-Apr-05

    C149

    Abstract: R-163 TP0610T 100uf-16v c148 R164 R158 R159 MIC7221 Si9435DY
    Text: Automatic Battery Switch-Over Circuit U40 Si9435DY 12VDC D12 F6 D 5-8 S 1-3 AC Adaptor VSOURCE 2.0A • • • SS24 G 4 7uA Supply Current 15V Max Supply Voltage Rail-to-Rail Input/Output + C133 100uF 16V R159 10k C148 0.1uF R157 1k R122 10k D21 RB400D R158


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    PDF Si9435DY 12VDC 100uF RB400D Si4435DY MIC7221 TP0610T 2N7002 C149 R-163 TP0610T 100uf-16v c148 R164 R158 R159 MIC7221

    9435 fairchild

    Abstract: 9435 mosfet mosfet 9435 Si9435DY 9435 so8
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original
    PDF Si9435DY 9435 fairchild 9435 mosfet mosfet 9435 9435 so8

    Si9435DY

    Abstract: No abstract text available
    Text: Si9435DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.055 @ VGS = -10 V "5.1 0.07 @ VGS = -6 V "4.6 0.105 @ VGS = -4.5 V "3.6 -30 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET


    Original
    PDF Si9435DY S-42910--Rev.

    Si9435DY

    Abstract: No abstract text available
    Text: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


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    PDF Si9435DY 18-Jul-08

    Simple PSpice Models Let You Simulate Common Battery

    Abstract: 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor
    Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.


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    PDF 5M994-N Simple PSpice Models Let You Simulate Common Battery 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor

    24V 20A SIEMENS battery charger

    Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
    Text: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.


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    PDF

    LTC1267

    Abstract: No abstract text available
    Text: LTC1267 LTC1267-ADJ/LTC1267-ADJ5 Dual High Efficiency Synchronous Step-Down Switching Regulators OBSOLETE: FOR INFORMATION PURPOSES ONLY Contact Linear Technology for Potential Replacement DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1267 series are dual synchronous step-down


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    PDF LTC1267 LTC1267-ADJ/LTC1267-ADJ5 LTC1267 400kHz. line05â Si9435DY 1000pF MBRS140T3

    factors on which internal internal resistance of a cell depends experiment

    Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH
    Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.


    Original
    PDF 5M994-N factors on which internal internal resistance of a cell depends experiment Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH

    TL494 car charger schematic diagram

    Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
    Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _


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    PDF accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram

    lg r40 MOTHERBOARD CIRCUIT diagram

    Abstract: I7 motherboard circuit diagram intel i5 MOTHERBOARD pcb CIRCUIT diagram schematic diagram converter fdd to usb MC3064 SW801 317 jrc VOLTAGE REGULATOR ATI RAGE mobility m1 CN603 C144* transistor REPLACEMENT
    Text: ORDER NO. CPD0010002C0 Notebook Computer CF-48 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-48 series are numbered in accordance with the types of the CPU, LCD


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    PDF CPD0010002C0 CF-48 CF-48 CN601 MMZ2012R102A JK601 CN503 FH12-8S-1SH lg r40 MOTHERBOARD CIRCUIT diagram I7 motherboard circuit diagram intel i5 MOTHERBOARD pcb CIRCUIT diagram schematic diagram converter fdd to usb MC3064 SW801 317 jrc VOLTAGE REGULATOR ATI RAGE mobility m1 CN603 C144* transistor REPLACEMENT

    BJT 2n3904

    Abstract: transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1
    Text: AN-003 Global Mixed-mode Technology Inc. Application Note 12V Fan Speed Controlling and Driving with G760A or G768B Introduction As the development of the technology, many electronic products have strong computing power. Because that the high computing power IC usually need more electricity, the chip will be getting hotter and hotter


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    PDF AN-003 G760A G768B BJT 2n3904 transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1

    MBRS130L

    Abstract: MBRS130LT3 MBRS140 MIC2177 MIC2178 MIC2178BWM TPSD107M010R0100 TPSE226M035R0300
    Text: Micrel MIC2178 MIC2178 2.5A Synchronous Buck Regulator General Description Features The Micrel MIC2178 is a 200kHz synchronous buck stepdown switching regulator designed for high-efficiency, battery-powered applications. The MIC2178 operates from a 4.5V to 16.5V input and


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    PDF MIC2178 MIC2178 200kHz 20-Lead MBRS130L MBRS130LT3 MBRS140 MIC2177 MIC2178BWM TPSD107M010R0100 TPSE226M035R0300

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    1W4148

    Abstract: SMP40P06
    Text: f T l K f t L LTC1159/LTC1159-3.3/LTC1159-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators FEATURES DCSCRIPTIOil • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20jiiA Supply Current in Shutdown The LTC 1159 series is afamily of synchronous step-down


    OCR Scan
    PDF LTC1159/LTC1159-3 3/LTC1159-5 250kHz LTC1148 LTC1147 LTC1159 1W4148 SMP40P06