Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI94 Search Results

    SF Impression Pixel

    SI94 Price and Stock

    Vishay Siliconix SI9407BDY-T1-E3

    MOSFET P-CH 60V 4.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9407BDY-T1-E3 Digi-Reel 18,943 1
    • 1 $1.93
    • 10 $1.23
    • 100 $1.93
    • 1000 $0.60233
    • 10000 $0.60233
    Buy Now
    SI9407BDY-T1-E3 Cut Tape 18,943 1
    • 1 $1.93
    • 10 $1.23
    • 100 $1.93
    • 1000 $0.60233
    • 10000 $0.60233
    Buy Now
    SI9407BDY-T1-E3 Reel 15,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.54256
    Buy Now
    RS SI9407BDY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.11
    Get Quote
    New Advantage Corporation SI9407BDY-T1-E3 10,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5
    Buy Now

    Vishay Siliconix SI9407BDY-T1-GE3

    MOSFET P-CH 60V 4.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9407BDY-T1-GE3 Digi-Reel 6,644 1
    • 1 $1.66
    • 10 $1.049
    • 100 $1.66
    • 1000 $0.50449
    • 10000 $0.50449
    Buy Now
    SI9407BDY-T1-GE3 Cut Tape 6,644 1
    • 1 $1.66
    • 10 $1.049
    • 100 $1.66
    • 1000 $0.50449
    • 10000 $0.50449
    Buy Now
    SI9407BDY-T1-GE3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.45257
    Buy Now
    RS SI9407BDY-T1-GE3 Bulk 1
    • 1 $1
    • 10 $0.95
    • 100 $0.85
    • 1000 $0.85
    • 10000 $0.85
    Get Quote
    New Advantage Corporation SI9407BDY-T1-GE3 37,500 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5214
    Buy Now

    Vishay Siliconix SI9435BDY-T1-E3

    MOSFET P-CH 30V 4.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9435BDY-T1-E3 Digi-Reel 6,308 1
    • 1 $1.4
    • 10 $0.885
    • 100 $1.4
    • 1000 $0.41764
    • 10000 $0.41764
    Buy Now
    SI9435BDY-T1-E3 Cut Tape 6,308 1
    • 1 $1.4
    • 10 $0.885
    • 100 $1.4
    • 1000 $0.41764
    • 10000 $0.41764
    Buy Now
    SI9435BDY-T1-E3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.37302
    Buy Now
    RS SI9435BDY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.84
    Get Quote
    Bristol Electronics SI9435BDY-T1-E3 2,130
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    New Advantage Corporation SI9435BDY-T1-E3 5,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3067
    Buy Now

    Vishay Siliconix SI9435BDY-T1-GE3

    MOSFET P-CH 30V 4.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9435BDY-T1-GE3 Cut Tape 2,371 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
    Buy Now
    SI9435BDY-T1-GE3 Digi-Reel 2,371 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
    Buy Now

    Vishay Siliconix SI9433BDY-T1-E3

    MOSFET P-CH 20V 4.5A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9433BDY-T1-E3 Digi-Reel 1,475 1
    • 1 $1.4
    • 10 $0.885
    • 100 $1.4
    • 1000 $0.41764
    • 10000 $0.41764
    Buy Now
    SI9433BDY-T1-E3 Cut Tape 1,475 1
    • 1 $1.4
    • 10 $0.885
    • 100 $1.4
    • 1000 $0.41764
    • 10000 $0.41764
    Buy Now
    RS SI9433BDY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.94
    Get Quote
    New Advantage Corporation SI9433BDY-T1-E3 5,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.46
    Buy Now

    SI94 Datasheets (114)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9400DY Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si9400DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9400DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO-8 Scan PDF
    Si9405DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9405DY Siliconix TRANSISTOR MOSFET SMD SO 8 Scan PDF
    Si9407AEY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9407AEY Vishay FET: P CHANNEL, 60V, 3.5A, 0.12 OHM, PACKAGE SO8 Original PDF
    Si9407AEY Vishay Intertechnology P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407AEY Vishay Telefunken P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407AEY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfet, P-Channel, -60, Dual, Pkg Style, SO-8 Scan PDF
    SI9407AEY-DS Vishay Telefunken DS-Spice Model for Si9407AEY Original PDF
    Si9407AEY SPICE Device Model Vishay P-Channel 50-V (D-S) MOSFET Original PDF
    SI9407AEY-T1 Vishay Intertechnology P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI9407BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC Original PDF
    SI9407BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC Original PDF
    Si9407DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9410ADY Vishay N-Channel Enhancement-Mode MOSFET Original PDF
    SI9410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si9410BDY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI94 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original
    Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si9436DY

    Abstract: No abstract text available
    Text: Si9436DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 6.8 0.060 @ VGS = 4.5 V 5.6 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si9436DY S-01831--Rev. 21-Aug-00 PDF

    Si9410BDY

    Abstract: Si9410BDY-T1-E3
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 11-Mar-11 PDF

    Si9407BDY-T1-GE3

    Abstract: Si9407BDY Si9407BDY-T1-E3
    Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11 PDF

    8 pin ic 9435

    Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original
    Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435 PDF

    Si9424BDY-E3

    Abstract: Si9424BDY-T1 Si9424DY-T1 Si9424BDY-T1-E3 Si9424BDY Si9424DY
    Text: Specification Comparison Vishay Siliconix Si9424BDY vs. Si9424DY Description: P-Channel, 2.5 V G-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9424BDY Replaces Si9424DY Si9424BDY-E3 (Lead (Pb)-free version) Replaces Si9424DY Si9424BDY-T1 Replaces Si9424DY-T1


    Original
    Si9424BDY Si9424DY Si9424BDY-E3 Si9424BDY-T1 Si9424DY-T1 Si9424BDY-T1-E3 PDF

    SI9435BDY-E3

    Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1
    Text: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1


    Original
    Si9435BDY Si9435DY Si9435BDY-E3 Si9435BDY-T1 Si9435DY-T1 Si9435BDY-T1-E3 PDF

    SI9434BDY-T1-E3

    Abstract: Si9434BDY-T1 Si9434BDY
    Text: Si9434BDY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.3 0.055 @ VGS = −2.5 V −5.1 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)


    Original
    Si9434BDY Si9434BDY--E3 Si9434BDY-T1--E3 08-Apr-05 SI9434BDY-T1-E3 Si9434BDY-T1 PDF

    Si9424BDY-T1-E3

    Abstract: Si9424BDY Si9424BDY-T1
    Text: Si9424BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 7.1 0.033 at VGS = - 2.5 V - 6.1 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT S SO-8 S 1


    Original
    Si9424BDY Si9424BDY-T1 Si9424BDY-T1-E3 08-Apr-05 PDF

    Si9434BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9434BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si9434BDY 12-Aug-04 PDF

    Si9422DY

    Abstract: NC012
    Text: SPICE Device Model Si9422DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original
    Si9422DY NC012 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si9424DY S-56950--Rev. 11-Jan-99 PDF

    Si9400DY

    Abstract: No abstract text available
    Text: Si9400DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 S S SO-8 NC 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si9400DY 08-Apr-05 PDF

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original
    Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94 PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SOĆ8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    Si9410DY P-38889--Rev. PDF

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original
    Si9434DY Si9424DY S-47586--Rev. 30-Apr-96 PDF

    Si9426DY

    Abstract: No abstract text available
    Text: Si9426DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    Si9426DY S-47958--Rev. 15-Apr-96 PDF

    Si9433DY

    Abstract: No abstract text available
    Text: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si9433DY S-00652--Rev. 27-Mar-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original
    Si9433BDY 2002/95/EC Si9433BDY-T1-E3 Si9433BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Power MOSFET, Fairchild

    Abstract: Si9410DY
    Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original
    Si9410DY Power MOSFET, Fairchild PDF

    AN609

    Abstract: Si9424BDY
    Text: Si9424BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si9424BDY AN609 10-Aug-07 PDF

    133532

    Abstract: AN609 Si9410BDY
    Text: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si9410BDY AN609 10-Aug-07 133532 PDF

    8D-13

    Abstract: No abstract text available
    Text: _ Si9422DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product VostV Rds ON) <ß) Id (A) 200 0 .420 @ V GS = 10 V ± 1 .7 D O S O -8 d: 13 0 Œ Œ CZ ID 0 XI D Z3 0 <J| Top View N-Channel MOSFET RATIN G S


    OCR Scan
    Si9422DY i9422DY ov-98 8D-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si9426DY Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) 20 r DS(on) (£2) I d (A) 0.0135 @ VGs = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 i D Q SO-8 6 s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan
    Si9426DY S-49532â 02-Feb-98 PDF