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    SI9410BDY Price and Stock

    Vishay Siliconix SI9410BDY-T1-E3

    MOSFET N-CH 30V 6.2A 8SO
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    DigiKey SI9410BDY-T1-E3 Digi-Reel 1
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    SI9410BDY-T1-E3 Cut Tape
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    Bristol Electronics SI9410BDY-T1-E3 1,703
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    Vishay Siliconix SI9410BDY-T1-GE3

    MOSFET N-CH 30V 6.2A 8SO
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    Bristol Electronics SI9410BDY-T1-E3 3,719
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    SI9410BDY-T1-E3 943
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    Quest Components SI9410BDY-T1-E3 1,532
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    SI9410BDY-T1-E3 1,488
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    SI9410BDY-T1-E3 754
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    Bristol Electronics SI9410BDY-T1 2,000
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    Quest Components SI9410BDY-T1 505
    • 1 $1.85
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    Bristol Electronics SI9410BDY-S08 150
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    SI9410BDY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si9410BDY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si9410BDY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI9410BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.2A 8SOIC Original PDF
    SI9410BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.2A 8SOIC Original PDF

    SI9410BDY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si9410BDY

    Abstract: Si9410BDY-T1-E3
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 11-Mar-11 PDF

    133532

    Abstract: AN609 Si9410BDY
    Text: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si9410BDY AN609 10-Aug-07 133532 PDF

    Si9410BDY

    Abstract: Si9410BDY-T1
    Text: Si9410BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY


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    Si9410BDY Si9410BDY-T1 25Duty S-31409--Rev. 07-Jul-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY


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    Si9410BDY Si9410BDY-T1 Si9410BDY--E3 Si9410BDY-T1--E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


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    Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si9410BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si9410BDY 0-to-10V 27-Jun-03 PDF

    Si9410BDY-T1

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


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    Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 11-Mar-11 Si9410BDY-T1 PDF

    SI9410DY-T1

    Abstract: Si9410BDY-E3 Si9410BDY-T1-E3 SI9410DY Si9410BDY TF11 Si9410BDY-T1
    Text: Specification Comparison Vishay Siliconix Si9410BDY vs. Si9410DY Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9410BDY Replaces Si9410DY Si9410BDY-E3 (Lead (Pb)-free version) Replaces Si9410DY Si9410BDY-T1 Replaces Si9410DY-T1


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    Si9410BDY Si9410DY Si9410BDY-E3 Si9410BDY-T1 Si9410DY-T1 Si9410BDY-T1-E3 TF11 PDF

    Si9410BDY-E3

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY


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    Si9410BDY Si9410BDY-T1 Si9410BDY--E3 Si9410BDY-T1--E3 08-Apr-05 Si9410BDY-E3 PDF

    Si9410BDY

    Abstract: Si9410BDY-E3 Si9410BDY-T1
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY


    Original
    Si9410BDY Si9410BDY-T1 Si9410BDY--E3 Si9410BDY-T1--E3 70TERISTICS S-50153--Rev. 31-Jan-05 Si9410BDY-E3 PDF

    Si9410BDY

    Abstract: Si9410BDY-T1-E3
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original
    Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 18-Jul-08 PDF

    Si9410BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si9410BDY 18-Jul-08 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


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    STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC PDF

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original
    STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference PDF

    MMBD4148wS

    Abstract: Si9410BDY ic 2415A Si2314BDS MAX5927 Si9410 2415a Bipolar NPN Transistor sot23
    Text: Maxim > App Notes > HOT-SWAP AND POWER SWITCHING CIRCUITS INTERFACE CIRCUITS Keywords: hot-swap, five-channel, positive and negative channels, MAX5927, MAX5927A, five-channel hot swap circuit Apr 21, 2008 APPLICATION NOTE 4228 A Five-Channel Three +V and Two -V Hot-Swap Reference Design


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    MAX5927, MAX5927A, MAX5927A com/an4228 MAX5927: MAX5927A: AN4228, APP4228, Appnote4228, MMBD4148wS Si9410BDY ic 2415A Si2314BDS MAX5927 Si9410 2415a Bipolar NPN Transistor sot23 PDF