Untitled
Abstract: No abstract text available
Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-51361--Rev.
18-Dec-96
Si64
51361
Si94
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PDF
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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Si9947DY
Abstract: Si4947DY Si4953DY Si6955DQ si6955
Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
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Si9947DY
Si4947DY
Si4953DY
Si6955DQ
S-47958--Rev.
15-Apr-96
si6955
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PDF
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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PDF
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Si4953DY
Abstract: No abstract text available
Text: Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET
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Si4953DY
S-47958--Rev.
15-Apr-96
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Original
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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PDF
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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PDF
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S-49534
Abstract: Si4953DY
Text: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET
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Si4953DY
S-49534--Rev.
06-Oct-97
S-49534
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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PDF
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-51361--Rev.
18-Dec-96
70513
51361
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PDF
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Si4953DY
Abstract: No abstract text available
Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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Si4953DY
Abstract: No abstract text available
Text: Si4953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.053 @ VGS = -10 V "4.9 0.095 @ VGS = -4.5 V "3.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET
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Si4953DY
S42234Rev.
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SI9947DY
Abstract: Si4947DY Si4953DY Si6955DQ
Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
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Si9947DY
Si4947DY
Si4953DY
Si6955DQ
S-47958--Rev.
15-Apr-96
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PDF
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
SI9430DY equivalent
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PDF
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Si4953DY
Abstract: Si4953DY-T1
Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1
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Si4953DY
Si4953DY-T1
08-Apr-05
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Si4953DY
Abstract: Si4953DY-T1
Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1
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Si4953DY
Si4953DY-T1
18-Jul-08
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74226
Abstract: RG154 Si4953DY Si4953ADY Si4953ADY-T1-E3 Si4953DY-T1 Si4953DY-T1-E3
Text: Specification Comparison Vishay Siliconix Si4953ADY vs. Si4953DY Description: Package: Pin Out: Dual P-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements Si4953ADY-T1-E3 Replaces Si4953DY-T1-E3 Si4953ADY-T1-E3 Replaces Si4953DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si4953ADY
Si4953DY
Si4953ADY-T1-E3
Si4953DY-T1-E3
Si4953DY-T1
06-Nov-06
74226
RG154
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V "4.9 0.095 @ VGS = - 4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET
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Si4953DY
S-49534--Rev.
06-Oct-97
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4953DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET
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Si4953DY
S-49534--Rev.
06-Oct-97
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Top side marking AHQ
Abstract: Si4953DY
Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Original
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Si4953DY
Top side marking AHQ
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PDF
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Si4953DY
Abstract: Si4953DY-T1
Text: Si4953DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1
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Si4953DY
Si4953DY-T1
S-31726--Rev.
18-Aug-03
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Untitled
Abstract: No abstract text available
Text: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)
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OCR Scan
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Si4953DY
S-49534â
06-Oct-97
DD17flflT
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S14435
Abstract: S14435DY S1443 70513 51361
Text: Temic SÌ9435DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y V D S V -30 r DS(on) (£2) I d (A ) 0.055 @ VGs = -10 V ±5.1 0.07 @ VGs = -6 V ±4.6 0.105 @ V<3s = -4.5 V ±3.6 Recom m ended upgrade: S14435DY or Si4953D Y Lower pro file ¡smaller size see Si6435DQ
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OCR Scan
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9435DY
S14435DY
Si4953D
Si6435DQ
S-51361--Rev.
18-Dec-96
S14435
S1443
70513
51361
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PDF
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