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    SI6435 Price and Stock

    Vishay Siliconix SI6435ADQ-T1-E3

    MOSFET P-CH 30V 4.7A 8TSSOP
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    DigiKey SI6435ADQ-T1-E3 Digi-Reel 1
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    SI6435ADQ-T1-E3 Cut Tape
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    Vishay Siliconix SI6435ADQ-T1-GE3

    MOSFET P-CH 30V 4.7A 8TSSOP
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    Vishay Siliconix SI6435ADQ-T1-E3/BKN

    MOSFET; TSSOP8 Single 30V P-CH, 4.5V Rated | Siliconix / Vishay SI6435ADQ-T1-E3/BKN
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    RS SI6435ADQ-T1-E3/BKN Bulk 2,000
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    Vishay Intertechnologies SI6435ADQ-T1-E3

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    Bristol Electronics SI6435ADQ-T1-E3 1,577
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    Vishay Siliconix SI6435DQ-T1

    4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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    Quest Components SI6435DQ-T1 8,903
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    Find more SI6435 price and stock on Findchips.com

    SI6435 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI6435 Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    Si6435ADQ Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI6435ADQ Vishay Siliconix MOSFETs Original PDF
    Si6435ADQ-E3 Vishay Transistor Mosfet P-CH 30V 4.7A 8TSSOP Original PDF
    Si6435ADQ SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si6435ADQ-T1 Vishay Transistor Mosfet P-CH 30V 4.7A 8TSSOP REEL Original PDF
    SI6435ADQ-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    Si6435ADQ-T1-E3 Vishay Transistor Mosfet P-CH 30V 4.7A 8TSSOP REEL Original PDF
    SI6435ADQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.7A 8-TSSOP Original PDF
    SI6435ADQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.7A 8-TSSOP Original PDF
    SI6435DQ Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    Si6435DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6435DQ Vishay Intertechnology P-Channel 30-V (D-S) Rated MOSFET Original PDF

    SI6435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6435ADQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6435ADQ S-52526Rev. 12-Dec-05

    Si6435DQ

    Abstract: 2502P CBHK741B019 F63TNR FDW2502P
    Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6435DQ 2502P CBHK741B019 F63TNR FDW2502P

    S-49534

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-49534--Rev. 06-Oct-97 S-49534

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si6435DQ siliconix

    Abstract: Si6435DQ
    Text: Si6435DQ Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.040 @ VGS = -10 V "4.5 0.070 @ VGS = -4.5 V "3.4 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6435DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6435DQ S41471Rev. Si6435DQ siliconix

    Si6435ADQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6435ADQ 18-Jul-08

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S


    Original     		PDF Si6435ADQ Si6435ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si6435ADQ

    Abstract: No abstract text available
    Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S


    Original     		PDF Si6435ADQ Si6435ADQ-T1-GE3 08-Apr-05

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si6435DQ

    Abstract: No abstract text available
    Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si6435ADQ

    Abstract: No abstract text available
    Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S


    Original     		PDF Si6435ADQ Si6435ADQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S


    Original     		PDF Si6435ADQ Si6435ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361

    S-49534

    Abstract: Si6435DQ A244V SI6435
    Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-49534--Rev. 06-Oct-97 S-49534 A244V SI6435

    Si6435ADQ

    Abstract: SI6435
    Text: Si6435ADQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "5.5 0.055 @ VGS = –4.5 V "4.1 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6435ADQ G * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6435ADQ 08-Apr-05 SI6435

    Untitled

    Abstract: No abstract text available
    Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S


    Original     		PDF Si6435ADQ Si6435ADQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S


    Original     		PDF Si6435ADQ Si6435ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    mosfet Vds 30 Vgs 25

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-47958--Rev. 15-Apr-96 mosfet Vds 30 Vgs 25

    Untitled

    Abstract: No abstract text available
    Text: Si6435ADQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "5.5 0.055 @ VGS = –4.5 V "4.1 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6435ADQ G * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6435ADQ S-99421--Rev. 29-Nov-99

    5139 mosfet

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-47958--Rev. 15-Apr-96 5139 mosfet