Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AA S5J Search Results

    SF Impression Pixel

    AA S5J Price and Stock

    Carling Technologies VVAAS5J-100

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics VVAAS5J-100
    • 1 -
    • 10 $2.42
    • 100 $1.39
    • 1000 $0.932
    • 10000 $0.92
    		Buy Now
    Sager VVAAS5J-100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    AA S5J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    ck 5551

    Abstract: TE 555-1
    Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. AA DIST REVISIONS 22 LTR DESCRIPTION H REV; EC 0502-0501-97 DATE DUN APVD 0 1 AUG97 GG DW MATERIAL: HO U SI N G - PBT POLYESTER, SEE TABLE FOR COLOR.


    OCR Scan     		AUG97 27jjm 03jim 27jim Q9MAY94 S5j24_ amp3869S_ /home/amp38695/edmm ck 5551 TE 555-1 PDF

    ASY32

    Abstract: 2N2022 2N109 2G109 2N2495 2sb48 OC75N 0c307 2G201 2N3075
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		2N781t 2N1646 2N1853/18 2N1960t 2N1960/46T 2N1961t 200rn 1961/46t 2N2022 ASY32 2N109 2G109 2N2495 2sb48 OC75N 0c307 2G201 2N3075 PDF

    2SA475

    Abstract: tk24b OC75N 2SA370 2V631 PNP ASY32 0c307 2G109 A1383 Audio Power Amplifier MOSFET TOSHIBA
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		2N781t 2N1646 2N1853/18 2N1960t 2N1960/46T 2N1961t 200rn 1961/46t 2N2022 2SA475 tk24b OC75N 2SA370 2V631 PNP ASY32 0c307 2G109 A1383 Audio Power Amplifier MOSFET TOSHIBA PDF

    AC122-30

    Abstract: 2N2022 2SA479 2N1646 2sa171 2SA301 AF185 SFT155 XA131 usaf521es071m
    Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol


    OCR Scan     		USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 AC122-30 2N2022 2SA479 2N1646 2sa171 2SA301 AF185 SFT155 XA131 usaf521es071m PDF

    transistor FB 260N

    Abstract: AC122 AC122-30 2SA479 2SA208 GT123 2N384 AF185 SFT155 XA131
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 transistor FB 260N AC122 AC122-30 2SA479 2SA208 GT123 2N384 AF185 SFT155 XA131 PDF

    AC122-30

    Abstract: AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		B170024 4000n AC122-30 AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48 PDF

    2N1103

    Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155 PDF

    Untitled

    Abstract: No abstract text available
    Text: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs


    OCR Scan     		00104SG KMM591000N KMM591000N KM44C1000J-1M 20-pin KM41C1000AJ-1M 20-pln 30-pin 150ns PDF

    673103NL

    Abstract: No abstract text available
    Text: 1 -Megabit Dynamic RAM Control le r / Driver 673103 6 7 3 1 03A Ordering inform ation F eatures/ Benefits • Supports up to 1 M DRAMs PART NUMBER • Capable of addressing up to 8 M 16-bft words or 8 M bytes PACKAGE TEMPERATURE 673103 52D, • On-chip capacitive-load drivers capable of driving up to 88


    OCR Scan     		16-bft 30-nsec 35-nsec 73103A tpoF32 673103NL PDF

    AAZ22

    Abstract: 5252 F led driver 25C80 a25aa TM162G TM162 KS0066U-00 AZA22 KS0066UP tianma lcd
    Text: TIANMA MICROELECTRONICS CO., LTD DEVICE SPECIFICATION FOR LCD MODULE Model No. TM162GBCWU6 Prepared by: Date: Checked by : Date: V erified by : ^ A pproved by: äz/ _ /P ^ o c D a t e : Y i- x * Date: To: _ □ C U ST O M E R ’S A P P R O V A L


    OCR Scan     		TM162GBCWU6 AAZ22 5252 F led driver 25C80 a25aa TM162G TM162 KS0066U-00 AZA22 KS0066UP tianma lcd PDF

    ic 8035

    Abstract: processor 8035 Am8035-8 NS9500 processor+8035+practical+circuits 8035
    Text: Am8048/8035 S in g le C h ip 8 -B it M ic ro c o m p u te rs DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • • • • • • • The Am8048 contains a 1k x 8 program memory, a 64 x 8 RAM data memory, 27 I/O lines, and an 8 -bit timer/counter in


    OCR Scan     		Am8048/8035 MIL-STD-883 Am8048 Am9080A Am8035 ic 8035 processor 8035 Am8035-8 NS9500 processor+8035+practical+circuits 8035 PDF

    MOR56

    Abstract: mot schematic M0P41 compal m0r11 AM251S EL 817 c321 SS145 SS97 ss129
    Text: Model Name: N20U PCB No: LA542 Revision: 1A Model Name: N20U2 PCB No: LA542 Revision:3A N20U BLOCK DIA GRAM CPU DECOUPING PULL UP/FDOW N GEYSERVILLE Coppermine Geyserville uBGA2/uPGA2 CPU CLOCK ICS9248-92 PAGE 11 PAGES PAGE 3,4 LCD & CRT PC I/ISA PULL UP/DOWN


    OCR Scan     		LA542 N20U2 ICS9248-92 443BX 32/64MB LA-642 MOR56 mot schematic M0P41 compal m0r11 AM251S EL 817 c321 SS145 SS97 ss129 PDF

    dac 344C

    Abstract: cga to vga converter circuits DQ0Q11Q Alliance semiconductor promotion IBM vga registers vl-bus promotion 3210 planar YUV display vlbus
    Text: Alliance Semiconductor ProMotion-3210 Advanced MultiMedia User Interface Accelerator Databook Copyright 1 9 9 4 Alliance Sem iconductor Corporation All Rights R eserved lì0034Lftl OOOOlflT Ûb4 ProMotion-3210 Copyright © 1994 Alliance Semiconductor Corporation


    OCR Scan     		ProMotion-3210TM 0034L ProMotion-3210 Promotion-3210TM DQ0Q11Q 2E200Q0 dac 344C cga to vga converter circuits Alliance semiconductor promotion IBM vga registers vl-bus promotion 3210 planar YUV display vlbus PDF