Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
1A023-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY5116400AT
HV51164CX
HY5116400AR
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4680M
Abstract: AAU2 AAU27
Text: HY51V4260B Seríes “H Y U N D A I 256K X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve
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HY51V4260B
16-bit
40pin
40/44pin
1AC26-10-MAY96
HY51V4260BJC
4680M
AAU2
AAU27
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HY5118160
Abstract: IPR12 hy5118160jc AAU27
Text: HY5118160 Series •HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5118160
16-bit
16-bit.
Sc5060)
1AD15-10-MAY95
HY5118160JC
IPR12
AAU27
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