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    ABB SEMICONDUCTORS SCR Search Results

    ABB SEMICONDUCTORS SCR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ABB SEMICONDUCTORS SCR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3 phase motor soft starter circuit diagram, ABB

    Abstract: abb SOFT STARTER CIRCUIT DIAGRAM thyristor testing 3 phase motor soft starter circuit diagram 3 phase motor soft starter diagram all types of thyristor and schematic igtb ABB Thyristor 1000 A thyristor ABB thyristor 5
    Text: Bi-Directional Control Thyristor Product Information ABB Semiconductors AG Bi-Directional Control Thyristor Product Information Björn Backlund, Jan-Olav Boeriis, Ken Thomas, Robert Waishar, Jürg Waldmeyer, Orhan Toker ABB Semiconductors AG February 1999.


    Original     		PDF

    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


    Original     		PDF 30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
    Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3


    Original     		PDF CH-5600 5SYA2053-02 the calculation of the power dissipation for the igbt and the inverse diode in circuits "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation

    ic 082 specifications

    Abstract: No abstract text available
    Text: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1800E170100 CH-5600 ic 082 specifications

    IGBT CHIP 600V ABB

    Abstract: ABB IGBT diode 1200V 2400E-12
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 2400E120100 5SYA1561-00 CH-5600 IGBT CHIP 600V ABB ABB IGBT diode 1200V 2400E-12

    1200G330100

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G330100 5SYA1563-01 CH-5600 1200G330100

    5SNA 1200E250100

    Abstract: No abstract text available
    Text: VCE IC = = 2500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E250100 Doc. No. 5SYA 1557-02 July 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200E250100 CH-5600 5SNA 1200E250100

    5SYA2039

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA 1556-02 July 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200E330100 CH-5600 5SYA2039

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA 1561-00 Jan.05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 2400E120100 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-02 09-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G330100 5SYA1563-02 CH-5600

    ABB IGBT

    Abstract: TF PTC 0300U120 5SNS 0300U120100
    Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1528-01 Jan. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless


    Original     		PDF 0300U120100 5SYA1528-01 CH-5600 ABB IGBT TF PTC 0300U120 5SNS 0300U120100

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 200 A IGBT Module LoPak4 SPT 5SNS 0200V120100 PRELIMINARY • • • • • Doc. No. 5SYA1526-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


    Original     		PDF 0200V120100 5SYA1526-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


    Original     		PDF 0300U120100 5SYA1528-01 CH-5600

    5SNA 1600N170100

    Abstract: 5SYA1564-01 ic 082 specifications MJ7200 2039
    Text: VCE IC = = 1700 V 1600 A ABB HiPakTM IGBT Module 5SNA 1600N170100 Doc. No. 5SYA1564-01 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1600N170100 5SYA1564-01 CH-5600 5SNA 1600N170100 ic 082 specifications MJ7200 2039

    5SNA

    Abstract: IGBT 6500 IC da 5SNA0750G650300
    Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power


    Original     		PDF 0750G650300 CH-5600 5SNA IGBT 6500 IC da 5SNA0750G650300

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability


    Original     		PDF 0150P450300 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 800 A ABB HiPakTM IGBT Module 5SNA 0800J450300 Doc. No. 5SYA1402-01 Mar. 12 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		PDF 0800J450300 5SYA1402-01 UL1557, E196689 CH-5600

    IGBT abb

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V120100 PRELIMINARY • • • • • Doc. No. 5SYA1524-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


    Original     		PDF 0150V120100 5SYA1524-00 Po150V120100 CH-5600 IGBT abb

    mj 340

    Abstract: 5SNS 0300U120100 5SNS0300U120100
    Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


    Original     		PDF 0300U120100 5SYA1528-01 Po300U120100 CH-5600 mj 340 5SNS 0300U120100 5SNS0300U120100

    IC 7400 configuration

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 800 A ABB HiPakTM IGBT Module 5SNA 0800J450300 Doc. No. 5SYA1402-00 July 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0800J450300 5SYA1402-00 CH-5600 IC 7400 configuration

    5SNA 1600N170100

    Abstract: a3600 ic 082 specifications C80025 5SNA1600N170100
    Text: VCE IC = = 1700 V 1600 A ABB HiPakTM IGBT Module 5SNA 1600N170100 Doc. No. 5SYA 1564-01 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1600N170100 CH-5600 5SNA 1600N170100 a3600 ic 082 specifications C80025 5SNA1600N170100

    igbt 5SNG

    Abstract: IC 7400 configuration 5SNG0150P450300 5SNG 0150P450300
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Sep 09 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


    Original     		PDF 0150P450300 CH-5600 igbt 5SNG IC 7400 configuration 5SNG0150P450300 5SNG 0150P450300

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 •    Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling


    Original     		PDF 0150P450300 UL1557, E196689 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 650 A ABB HiPak IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-04 06-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		PDF 0650J450300 UL1557, E196689 CH-5600