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    ABB THYRISTOR CONTROL UNIT Search Results

    ABB THYRISTOR CONTROL UNIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRT155C81A475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155C81A475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13D Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    GRT155D70J475ME13J Murata Manufacturing Co Ltd AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    ABB THYRISTOR CONTROL UNIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3 phase motor soft starter circuit diagram, ABB

    Abstract: abb SOFT STARTER CIRCUIT DIAGRAM thyristor testing 3 phase motor soft starter circuit diagram 3 phase motor soft starter diagram all types of thyristor and schematic igtb ABB Thyristor 1000 A thyristor ABB thyristor 5
    Text: Bi-Directional Control Thyristor Product Information ABB Semiconductors AG Bi-Directional Control Thyristor Product Information Björn Backlund, Jan-Olav Boeriis, Ken Thomas, Robert Waishar, Jürg Waldmeyer, Orhan Toker ABB Semiconductors AG February 1999.


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    IGCT

    Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
    Text: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the


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    ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT PDF

    schematic diagram igbt inverter welding machine

    Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
    Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality


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    abb r1561

    Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
    Text: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .


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    D0201 D-69006 abb r1561 ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002 PDF

    GTO thyristor Curve properties

    Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
    Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by


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    30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 2630 A = 4130 A = 43x103 A = 0.85 V = 0.16 mΩ Bi-Directional Control Thyristor 5STB 24Q2800 Doc. No. 5SYA1053-02 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


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    24Q2800 5SYA1053-02 24Q2800 CH-5600 PDF

    ABB thyristor 5

    Abstract: No abstract text available
    Text: VSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1580 A 2480 A 29700 A 1.2 V 0.458 mΩ Ω Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-02 Apr. 02 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


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    18U6500 5SYA1037-02 18U6500 18U6200 18U5800 CH-5600 ABB thyristor 5 PDF

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    Abstract: No abstract text available
    Text: VDM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1920 A = 3020 A = 32x103 A = 0.96 V = 0.285 mΩ Bi-Directional Control Thyristor 5STB 18N4200 Doc. No. 5SYA1040-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


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    18N4200 5SYA1040-04 18N4200 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 2430 A = 3820 A = 43x103 A = 0.85 V = 0.16 mΩ Bi-Directional Control Thyristor 5STB 24N2800 Doc. No. 5SYA1041-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


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    24N2800 5SYA1041-04 24N2800 CH-5600 PDF

    abb phase control thyristors

    Abstract: No abstract text available
    Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 5200 V = 1980 A = 3100 A = 42x103 A = 1.06 V = 0.219 m Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-03 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


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    25U5200 5SYA1038-03 CH-5600 abb phase control thyristors PDF

    Untitled

    Abstract: No abstract text available
    Text: VDM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 May 07 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •


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    13N6500 5SYA1035-04 13N6500 CH-5600 PDF

    gate turn-off

    Abstract: No abstract text available
    Text: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •


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    13N6500 5SYA1035-03 CH-5600 gate turn-off PDF

    ABB s

    Abstract: No abstract text available
    Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


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    13N6500 5SYA1035-04 13N6500 65echanical CH-5600 ABB s PDF

    abb phase control thyristors

    Abstract: No abstract text available
    Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1580 A = 2480 A = 29.7x103 A = 1.2 V = 0.458 m Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-03 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


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    18U6500 5SYA1037-03 18U6500 650echanical CH-5600 abb phase control thyristors PDF

    ABB thyristor 5

    Abstract: A110 B110 C110
    Text: VSM IT AV M IT(RMS) ITSM VT0 rT = = = = = = 5200 V 1980 A 3100 A 42x10 A 1.06 V 0.219 mΩ Ω Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-02 Jul. 03 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


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    25U5200 5SYA1038-02 25U5000 25U4600 CH-5600 ABB thyristor 5 A110 B110 C110 PDF

    5SHX 14H4502

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 1100 ITSM = 9 VT0 = 1.5 rT = 1.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 PRELIMINARY Doc. No. 5SYA 1227- 02 Feb. 99 • • • • • • • • Features Direct fiber optic control


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    14H4502 CH-5600 5SHX 14H4502 PDF

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    Abstract: No abstract text available
    Text: Key Parameters VDRM = 5500 ITGQM = 280 ITSM = 3 VT0 = 1.5 rT = 5.4 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 03D6004 PRELIMINARY Doc. No. 5SYA 1225-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


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    03D6004 CH-5600 PDF

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    Abstract: No abstract text available
    Text: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


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    10H6004 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 340 ITSM = 3 VT0 = 1.5 rT = 4.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 PRELIMINARY Doc. No. 5SYA 1224-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


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    04D4502 CH-5600 PDF

    ABB MCCB 160

    Abstract: ABB MCCB pst 39 transformer PSR37-600-81 ABB soft starter PSTB MANUAL abb soft start PSR16 OS160D PSR105-MS495 OS125D
    Text: So fts ta rte rs Type PSR, PSS & PST B Softstarters Softstarters Type PSR, PSS & PST(B) Low Voltage Products & Systems ABB Inc. • 888-385-1221 • www.abb.us/lowvoltage 6.1 1SXU000023C0202 fts So rs te r ta General information PSR Softstarters Softstarters


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    1SXU000023C0202 ta23C0202 PSR105 PSR25 ABB MCCB 160 ABB MCCB pst 39 transformer PSR37-600-81 ABB soft starter PSTB MANUAL abb soft start PSR16 OS160D PSR105-MS495 OS125D PDF

    hp 2800 diode

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 PRELIMINARY Doc. No. 5SYA1223-03 Feb. 99 • • • • • • • • Features Direct fiber optic control


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    08F4502 5SYA1223-03 CH-5600 hp 2800 diode PDF

    abb phase control thyristors

    Abstract: 5szk
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 6.4x103 A = 1V = 1.5 mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    04D4200 5SYA1025-05 04D4200 CH-5600 abb phase control thyristors 5szk PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 19x103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-06 Jul 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


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    12F4200 5SYA1021-06 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 7.1•103 A = 1V = 1.5 mW Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-07 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


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    04D4200 5SYA1025-07 CH-5600 PDF