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    AC 187 NPN TRANSISTOR TO 1 Search Results

    AC 187 NPN TRANSISTOR TO 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    AC 187 NPN TRANSISTOR TO 1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD118

    Abstract: 2SD1187
    Text: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0


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    2SD1187 2SD118 2SD1187 PDF

    5660-6R

    Abstract: No abstract text available
    Text: Cassette Style AC-DC Converters 250 Watt AC-DC Converters with PFC KP Series KP Series Input voltage from 187.255 V AC 1 or 2 isolated outputs up to 56.5 V DC 4 kV AC I/O electric strength test voltage • Power factor >0.95, harmonics <IEC/EN61000-3-2 • Output power up to 280 Watt


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    IEC/EN61000-3-2 5660-6R PDF

    Melcher KP 5000

    Abstract: melcher kp 5000 converter 5660-6R schroff power supply 11006 KP Series
    Text: Rugged Environment AC-DC Converters >100 Watt 250 Watt AC-DC Converters with PFC KP Series KP Series Input to output isolation Double output • Power factor >0.95, harmonics <IEC/EN61000-3-2 • Output power up to 280 Watt • Input over- and undervoltage lock-out


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    IEC/EN61000-3-2 Melcher KP 5000 melcher kp 5000 converter 5660-6R schroff power supply 11006 KP Series PDF

    melcher H1000

    Abstract: H1000 melcher ac-dc converter dc dc converter melcher h1000 Melcher M 3000 Melcher family K 1000 ac-dc
    Text: H-Family AC-DC Converters <100 W 50 W AC-DC Converters Single output: Dual output: Triple output: Benign Environment H-Family series 110H/230H1000 series 110H/230H2000 series 110H/230H3000 • Two input voltage ranges suitable for most AC mains • Efficient input filter and built-in surge and transient


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    110H/230H1000 110H/230H2000 110H/230H3000 melcher H1000 H1000 melcher ac-dc converter dc dc converter melcher h1000 Melcher M 3000 Melcher family K 1000 ac-dc PDF

    melcher H1000

    Abstract: H1000 melcher ac-dc converter ttl to sine convertor ac-dc converter full wave type diagram Transient Suppressor Mark U01
    Text: H-Family AC-DC Converters <100 W 50 W AC-DC Converters Single output: Dual output: Triple output: Benign Environment H-Family series 110H/230H1000 series 110H/230H2000 series 110H/230H3000 • Two input voltage ranges suitable for most AC mains • Efficient input filter and built-in surge and transient


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    110H/230H1000 110H/230H2000 110H/230H3000 melcher H1000 H1000 melcher ac-dc converter ttl to sine convertor ac-dc converter full wave type diagram Transient Suppressor Mark U01 PDF

    LK5660-7R

    Abstract: L3032 LK2000
    Text: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6


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    BCD20001-G 16-Dec-2010 LK5660-7R L3032 LK2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz BFP181R Q62702-F1685 OT-143R BFP181R PDF

    BF 182 transistor

    Abstract: transistor 182 marking code M21
    Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    900MHz OT-143 Q62702-F1396 BF 182 transistor transistor 182 marking code M21 PDF

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    Q62702-F1594 OT-143R 900MHz 1S211 2I k PDF

    DB-1MS

    Abstract: No abstract text available
    Text: SIEMENS BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz Q62702-F1271 1=C It RFs m B F P 181 PO ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1271 OT-143 DB-1MS PDF

    HIGH POWER DIODE

    Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
    Text: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor


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    D66DWT273 D66EW1 D66DW/EW 460VAC D66DW -D66DW HIGH POWER DIODE "Power Diode" 500V 20A 132 1506 diode EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor PDF

    11744 502

    Abstract: No abstract text available
    Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package


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    900MHz Q62702-F1378 OT-143 11744 502 PDF

    transistor B 1184

    Abstract: No abstract text available
    Text: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    900MHz BFP182R OT-143R Q62702-F1601 transistor B 1184 PDF

    CX-RVM5

    Abstract: MS-RF22 CX-ND300R D100 npn transistor CX-D100-PN FX-D1 CX-30 FX-11A FX-13 CX-ND300R-PN-J
    Text: Amplifier Built-in Inverter Light Resistant Photoelectric Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS CX-RVM5/D100/ND300R FX-13 FX-11A Fiber Sensors Reliable and Easy to Use CX-20 FZ-10 Marked Conforming to EMC Directive Insusceptible to Inverter Fluorescent Light


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    CX-RVM5/D100/ND300R FX-13 FX-11A FZ-10 CX-20 8-M30 MS-RF23 RF-230 CX-RVM5 MS-RF22 CX-ND300R D100 npn transistor CX-D100-PN FX-D1 CX-30 FX-11A FX-13 CX-ND300R-PN-J PDF

    Q62702-F1378

    Abstract: MJE 280 power transistor
    Text: BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz OT-143 Q62702-F1378 Dec-11-1996 Q62702-F1378 MJE 280 power transistor PDF

    VPS05178

    Abstract: on BE 187 TRANSISTOR
    Text: BFP 280 NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communications systems pager, cordless 4 telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    VPS05178 OT-143 900MHz Oct-12-1999 VPS05178 on BE 187 TRANSISTOR PDF

    marking 93A

    Abstract: TRANSISTOR BI 187
    Text: BFP 93A NPN Silicon RF Transistor 3  For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A


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    VPS05178 OT-143 900MHz Oct-12-1999 marking 93A TRANSISTOR BI 187 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


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    Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008 PDF

    ILD256T

    Abstract: No abstract text available
    Text: ILD256T Dual AC Input Phototransistor Small Outline Surface Mount Optocoupler FEATURES • Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum • Bidirectional AC Input • SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available only on Tape and Reel Option


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    ILD256T 17-August-01 ILD256T PDF

    Q62702-F1396

    Abstract: BF 182 transistor
    Text: BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    900MHz OT-143 Q62702-F1396 Dec-12-1996 Q62702-F1396 BF 182 transistor PDF

    IC 2272

    Abstract: Q62702-F1601 GMA marking
    Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    900MHz OT-143R Q62702-F1601 Jan-21-1997 IC 2272 Q62702-F1601 GMA marking PDF

    Q62702-F1271

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    900MHz OT-143 Q62702-F1271 Dec-11-1996 Q62702-F1271 PDF

    VPS05178

    Abstract: No abstract text available
    Text: BFP 180 NPN Silicon RF Transistor 3  For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2  F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    VPS05178 OT-143 900MHz Oct-12-1999 VPS05178 PDF

    VPS05178

    Abstract: BFP183
    Text: BFP 183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    VPS05178 OT-143 900MHz Oct-12-1999 VPS05178 BFP183 PDF