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    BFP183 Price and Stock

    Infineon Technologies AG BFP183E7764HTSA1

    RF TRANS NPN 12V 8GHZ SOT143-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP183E7764HTSA1 Cut Tape 14,928 1
    • 1 $0.23
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    BFP183E7764HTSA1 Digi-Reel 14,928 1
    • 1 $0.23
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    BFP183E7764HTSA1 Reel 6,000 3,000
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    Avnet Americas BFP183E7764HTSA1 Reel 4 Weeks 18,000
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    Verical BFP183E7764HTSA1 270,000 18,000
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    BFP183E7764HTSA1 21,000 3,000
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    BFP183E7764HTSA1 18,000 343
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    BFP183E7764HTSA1 9,000 3,000
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    Arrow Electronics BFP183E7764HTSA1 21,000 4 Weeks 3,000
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    BFP183E7764HTSA1 9,000 4 Weeks 3,000
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    Newark BFP183E7764HTSA1 Cut Tape 17,940 5
    • 1 $0.27
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    BFP183E7764HTSA1 Reel 3,000
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    Rochester Electronics BFP183E7764HTSA1 3,000 1
    • 1 $0.086
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    Chip1Stop BFP183E7764HTSA1 Cut Tape 18,000
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    EBV Elektronik BFP183E7764HTSA1 9,000 5 Weeks 3,000
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    New Advantage Corporation BFP183E7764HTSA1 6,000 1
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    Infineon Technologies AG BFP183WH6327XTSA1

    RF TRANS NPN 12V 8.5GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP183WH6327XTSA1 Digi-Reel 9,352 1
    • 1 $0.23
    • 10 $0.157
    • 100 $0.1188
    • 1000 $0.09861
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    BFP183WH6327XTSA1 Cut Tape 9,352 1
    • 1 $0.23
    • 10 $0.157
    • 100 $0.1188
    • 1000 $0.09861
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    BFP183WH6327XTSA1 Reel 6,000 3,000
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    • 10000 $0.0927
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    Avnet Americas BFP183WH6327XTSA1 Reel 8 Weeks 12,000
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    Verical BFP183WH6327XTSA1 252,000 12,000
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    BFP183WH6327XTSA1 18,000 3,000
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    BFP183WH6327XTSA1 11,800 341
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    Arrow Electronics BFP183WH6327XTSA1 18,000 8 Weeks 3,000
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    Newark BFP183WH6327XTSA1 Cut Tape 2,712 5
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    Rochester Electronics BFP183WH6327XTSA1 12,000 1
    • 1 $0.0869
    • 10 $0.0869
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    • 1000 $0.0739
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    TME BFP183WH6327XTSA1 2,448 1
    • 1 $0.245
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    Chip1Stop BFP183WH6327XTSA1 Cut Tape 11,800
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    EBV Elektronik BFP183WH6327XTSA1 9 Weeks 3,000
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    Win Source Electronics BFP183WH6327XTSA1 9,001
    • 1 -
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    Infineon Technologies AG BFP183WE6327BTSA1

    RF TRANS NPN 12V 8GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP183WE6327BTSA1 Reel 12,000
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    Win Source Electronics BFP183WE6327BTSA1 27,000
    • 1 -
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    Infineon Technologies AG BFP 183 E7764

    RF Bipolar Transistors NPN Silicon RF TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFP 183 E7764 17,244
    • 1 $0.26
    • 10 $0.152
    • 100 $0.109
    • 1000 $0.103
    • 10000 $0.087
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    Infineon Technologies AG BFP 183W H6327

    RF Bipolar Transistors RF BIP TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BFP 183W H6327 11,286
    • 1 $0.19
    • 10 $0.108
    • 100 $0.079
    • 1000 $0.079
    • 10000 $0.078
    		Buy Now
    Verical BFP 183W H6327 12,000 421
    • 1 -
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    • 100 -
    • 1000 $0.1739
    • 10000 $0.1602
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    Quest Components BFP 183W H6327 9,600
    • 1 $0.53
    • 10 $0.53
    • 100 $0.53
    • 1000 $0.53
    • 10000 $0.159
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    CoreStaff Co Ltd BFP 183W H6327 12,000
    • 1 $0.288
    • 10 $0.288
    • 100 $0.157
    • 1000 $0.106
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    Find more BFP183 price and stock on Findchips.com

    BFP183 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP183 Infineon Technologies For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Original PDF
    BFP183 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP183 Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) Original PDF
    BFP183 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFP183E6359 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 4SOT-143 T/R Original PDF
    BFP183E6606 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 4SOT-143 T/R Original PDF
    BFP183E6691 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 4SOT-143 T/R Original PDF
    BFP183E7764 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 4SOT-143 T/R Original PDF
    BFP183E7764 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP183E7764HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP183R Infineon Technologies For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA Original PDF
    BFP183R Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP183R Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) Original PDF
    BFP183T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP183TRW-GS08 Vishay TRANS GP BJT NPN 10V 0.065A 4SOT-343R T/R Original PDF
    BFP183TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP183TW-GS08 Vishay TRANS GP BJT NPN 10V 0.065A 4SOT-343 T/R Original PDF
    BFP183W Infineon Technologies For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Original PDF
    BFP183W Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) Original PDF

    BFP183 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features


    Original     		PDF BFP183T/BFP183TW/BFP183TRW BFP183TW BFP183TRW BFP183T D-74025 20-Jan-99

    BFP183T

    Abstract: No abstract text available
    Text: BFP183T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure D High transition frequency 2 3 1 4 94 9279


    Original     		PDF BFP183T D-74025 BFP183T

    BFP183W

    Abstract: BGA420
    Text: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP183W OT343 BFP183W BGA420

    BFP183T

    Abstract: marking 83 Telefunken
    Text: BFP183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFP183T D-74025 17-Apr-96 BFP183T marking 83 Telefunken

    Untitled

    Abstract: No abstract text available
    Text: BFP183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP183W VPS05605 OT343

    BFP183W

    Abstract: BGA420 marking rhs
    Text: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP183W OT343 BFP183W BGA420 marking rhs

    Untitled

    Abstract: No abstract text available
    Text: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP183W OT343

    ZL 58

    Abstract: BFP183W
    Text: BFP183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP183W VPS05605 OT343 Aug-10-2001 ZL 58 BFP183W

    BFP183T

    Abstract: BFP183TRW BFP183TW 83P sot-143 vishay MARKING UM
    Text: BFP183T / BFP183TW / BFP183TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency fT = 8 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP183T BFP183TW BFP183TRW 2002/95/EC 2002/96/EC OT-143 OT-343 OT-343R BFP183T OT-143 BFP183TRW 83P sot-143 vishay MARKING UM

    BFP181

    Abstract: BFP183
    Text: BFP183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP183 OT143 BFP181 BFP183

    85014

    Abstract: BFP183T BFP183TRW BFP183TW
    Text: BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features


    Original     		PDF BFP183T/BFP183TW/BFP183TRW BFP183TW BFP183TRW BFP183T D-74025 20-Jan-99 85014

    Untitled

    Abstract: No abstract text available
    Text: BFP183T / BFP183TW / BFP183TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency fT = 8 GHz Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP183T BFP183TW BFP183TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R OT-143

    83P sot-143

    Abstract: MG MARKING
    Text: BFP183T / BFP183TW / BFP183TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency fT = 8 GHz 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at


    Original     		PDF BFP183T BFP183TW BFP183TRW OT-143 OT-343 OT-143 OT-343 OT-343R 83P sot-143 MG MARKING

    Untitled

    Abstract: No abstract text available
    Text: BFP183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP183W VPS05605 OT343

    BFP183R

    Abstract: transistor marking RHs
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		PDF BFP183R OT143R 900MHz Aug-09-2001 BFP183R transistor marking RHs

    BFP183T

    Abstract: BFP183TRW BFP183TW 83P sot-143
    Text: BFP183T/BFP183TW/BFP183TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features


    Original     		PDF BFP183T/BFP183TW/BFP183TRW BFP183TW BFP183TRW BFP183T D-74025 20-Jan-99 83P sot-143

    BFP183T

    Abstract: No abstract text available
    Text: BFP183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFP183T D-74025 17-Apr-96 BFP183T

    SPICE 2G6

    Abstract: No abstract text available
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		PDF BFP183R OT143R SPICE 2G6

    BFP183TW

    Abstract: Telefunken
    Text: BFP183TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFP183TW D-74025 25-Oct-96 BFP183TW Telefunken

    bfp183

    Abstract: VPS05178
    Text: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP183 VPS05178 OT143 900MHz Aug-10-2001 bfp183 VPS05178

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


    OCR Scan     		PDF BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc

    marking 83

    Abstract: BFP183T
    Text: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features


    OCR Scan     		PDF BFP183T 17-Apr-96 marking 83 BFP183T

    sot-143 vishay telefunken

    Abstract: No abstract text available
    Text: ViSHAY _ ▼ BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.


    OCR Scan     		PDF BFP183T/BFP183TW/BFP183TRW BFP183TW BFP183TRW BFP183T D-74025 20-Jan-99 sot-143 vishay telefunken

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05