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SMC Corporation of America LEY25AC-200BD ELECTRIC ACTUATOR, ROD TYPE, LEY SERIES \| SMC Corporation LEY25AC-200BD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LEY25AC-200BD	Bulk		5 Weeks	1	1 $1216.07 10 $1216.07 100 $1216.07 1000 $1216.07 10000 $1216.07	Get Quote
SMC Corporation of America LEY25RAC-200B ELECTRIC ACTUATOR, ROD TYPE, LEY SERIES \| SMC Corporation LEY25RAC-200B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LEY25RAC-200B	Bulk		5 Weeks	1	1 $1189.29 10 $1189.29 100 $1189.29 1000 $1189.29 10000 $1189.29	Get Quote
SMC Corporation of America LEY16DAC-200BM ELECTRIC ACTUATOR, ROD TYPE, LEY SERIES \| SMC Corporation LEY16DAC-200BM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LEY16DAC-200BM	Bulk		5 Weeks	1	1 $996.43 10 $996.43 100 $996.43 1000 $996.43 10000 $996.43	Get Quote
SMC Corporation of America LEYG25LDAC-200B ELECTRIC ACTUATOR, GUIDE ROD TYPE, LEYG SERIES \| SMC Corporation LEYG25LDAC-200B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LEYG25LDAC-200B	Bulk		5 Weeks	1	1 $1280.36 10 $1280.36 100 $1280.36 1000 $1280.36 10000 $1280.36	Get Quote
SMC Corporation of America LEY16DAC-200BM-R36N3 ELECTRIC ACTUATOR, ROD TYPE, LEY SERIES \| SMC Corporation LEY16DAC-200BM-R36N3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LEY16DAC-200BM-R36N3	Bulk		5 Weeks	1	1 $1617.86 10 $1617.86 100 $1617.86 1000 $1617.86 10000 $1617.86	Get Quote

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AC200B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NPTB00004 Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for	Original	NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100	PDF
NPTB00025 Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT	PDF
NPT25100 Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader	Original	NPTB00004 PO150S 99GHz 17GHz -35dBc NPT25015 NPT25100 800-1000MHz NPT25100 NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P	PDF
NPT1012 Abstract: NPT1012B AC200BM-F2 AC200B Text: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in	Original	NPT1012 DC-4000MHz 3000MHz 0-25W 1000-2500MHz 2-20W 30-1000MHz EAR99 3000MHz) 225mA, NPT1012B AC200BM-F2 AC200B	PDF
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate	PDF
Untitled Abstract: No abstract text available Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006	PDF
NPTB0004 Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and	Original	NPT25015 PO150S NPT251 NPTB00025 AC200B NPTB00040 AC360C NPTB00050 AC360B NPTB0004 NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz	PDF
Untitled Abstract: No abstract text available Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,	PDF
Untitled Abstract: No abstract text available Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006	PDF
Untitled Abstract: No abstract text available Text: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA,	PDF