SSF7508
Abstract: 3680 MOSFET 130a Gate Turn-off top switch to220 25Starting N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Text: SSF7508 Feathers: ID=130A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=80V
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SSF7508
SSF7508
3680 MOSFET
130a Gate Turn-off
top switch to220
25Starting
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
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SSF3018
Abstract: TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220
Text: SSF3018 Feathers: ID=60A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=100V
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SSF3018
15mohm
SSF3018
TO220
Single
100V 60A Mosfet
Avalanche diod
p channel mosfet 100v
top switch to220
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SSF4004
Abstract: 25Starting pn junction diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V BV40V
Text: SSF4004 Feathers: ID=200A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=40V
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SSF4004
SSF4004
25Starting
pn junction diode
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
BV40V
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AUIRLR3636
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TO220
Abstract: Single SSF3018D Avalanche diod p channel mosfet 100v
Text: SSF3018D Feathers: ID=80A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=100V
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SSF3018D
14mohm
SSF3018D
TO220
Single
Avalanche diod
p channel mosfet 100v
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRLR3636 HEXFET Power MOSFET Features l l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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AUIRLR3636
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BR 1n70
Abstract: 4570 1N70 3VD186700YL
Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD186700YL
3VD186700YL
O-251-3L
BR 1n70
4570
1N70
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Untitled
Abstract: No abstract text available
Text: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD182600YL
3VD182600YL
O-92DT-3L
1N60C.
250uA
250uA
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SSF*7510
Abstract: SSF7510 p-n junction diode ssf75 3150 mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 57AVDD
Text: SSF7510 Feathers: ID=75A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=75V Rdson=10mohm
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SSF7510
10mohm
SSF7510
SSF*7510
p-n junction diode
ssf75
3150 mosfet
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
57AVDD
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Diode Equivalent 1N60
Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD186600YL
3VD186600YL
O-251-3Ltype
Diode Equivalent 1N60
1N60 MOS
1N60 SILAN
diode 1n60
1N60
silan
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ssf7509
Abstract: . SSF7509 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V ssf7509 equivalent MOSFET RDSon 0.008 ssf75
Text: SSF7509 Feathers: ID=80A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=80V Rdson=8mohm
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SSF7509
SSF7509
. SSF7509
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
ssf7509 equivalent
MOSFET RDSon 0.008
ssf75
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Untitled
Abstract: No abstract text available
Text: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified;
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3VD324500YL
3VD324500YL
O-220
3780m
2780m
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Untitled
Abstract: No abstract text available
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
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IRFZ48NL
Abstract: 1408B AN-994 IRFZ48NS
Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from
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1408B
IRFZ48NS)
IRFZ48NL)
IRFZ48NS
IRFZ48NL
IRFZ48NL
1408B
AN-994
IRFZ48NS
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AUFR5410
Abstract: AUIRFR5410
Text: PD - 96344 AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRFR5410
-100V
AUFR5410
AUIRFR5410
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IRF540NL
Abstract: IRF540NS 3F smd transistor AN-994 IRF540N MOSFET IRF540n
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
IRF540NL
IRF540NS
3F smd transistor
AN-994
IRF540N
MOSFET IRF540n
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1408B
Abstract: AN-994 IRFZ48NL IRFZ48NS IRFZ48N
Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from
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1408B
IRFZ48NS)
IRFZ48NL)
IRFZ48NS
IRFZ48NL
1408B
AN-994
IRFZ48NL
IRFZ48NS
IRFZ48N
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5n80
Abstract: SMPS 30v
Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.
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QW-R502-483
5n80
SMPS 30v
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Untitled
Abstract: No abstract text available
Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from
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1408B
IRFZ48NS)
IRFZ48NL)
IRFZ48NS
IRFZ48NL
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Untitled
Abstract: No abstract text available
Text: PD - 97695A AUIRFL024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant
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7695A
AUIRFL024N
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ssf6010
Abstract: BV-60 30V 60A power p MOSFET mosfet 20v 30A
Text: SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=10mohm Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current N–Channel enhancement mode trench power
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SSF6010
10mohm
SSF6010
BV-60
30V 60A power p MOSFET
mosfet 20v 30A
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ssf6008
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 3150 mosfet
Text: SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8mΩ Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power
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SSF6008
SSF6008
SSF6008TOP
T0-220)
O-220
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
3150 mosfet
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Untitled
Abstract: No abstract text available
Text: SSF4006 Feathers: ID =160A Advanced trench process technology BV=40V avalanche energy, 100% test Rdson=0.005Ω Fully characterized avalanche voltage and current Description: The SSF4006 is a new generation of high voltage and low current N–Channel enhancement mode trench power
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SSF4006
SSF4006
T0-220)
00A/s
width300S,
O-220
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rl86
Abstract: SSF0115
Text: SSF0115 Feathers: ID =3A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=0.15Ω Fully characterized avalanche voltage and current Description: The SSF0115 is a new generation of high voltage and low current N–Channel enhancement mode trench power
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SSF0115
SSF0115
OT-223)
IEEE802
OT-223
rl86
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