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    SSF3018K

    Abstract: SSF3018
    Text: SSF3018K 640mA, 30V,RDS ON 8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF3018K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.


    Original     		PDF SSF3018K 640mA, SSF3018K Symb01-Jun-2002 01-Jun-2002 SSF3018

    SSF3018

    Abstract: TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220
    Text: SSF3018 Feathers: ID=60A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=100V


    Original     		PDF SSF3018 15mohm SSF3018 TO220 Single 100V 60A Mosfet Avalanche diod p channel mosfet 100v top switch to220

    TO220

    Abstract: Single SSF3018D Avalanche diod p channel mosfet 100v
    Text: SSF3018D Feathers: ID=80A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=100V


    Original     		PDF SSF3018D 14mohm SSF3018D TO220 Single Avalanche diod p channel mosfet 100v