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    Festo ADVU-16-10-A-P-A

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    DigiKey ADVU-16-10-A-P-A Bulk 1 1
    • 1 $171.42
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    Festo ADVU-32-10-P-A

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    DigiKey ADVU-32-10-P-A Bulk 1
    • 1 $220.67
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    Festo ADVU-50-30-P-A

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    DigiKey ADVU-50-30-P-A Bulk 1
    • 1 $368.39
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    Festo ADVU-63-25-P-A

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    DigiKey ADVU-63-25-P-A Bulk 1
    • 1 $443.51
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    Festo ADVU-20-25-P-A

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    DigiKey ADVU-20-25-P-A Bulk 1
    • 1 $184.02
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    ADVU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor TT 2246

    Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
    Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23


    Original     		PDF 3/SOT-23 6/SOT-23 10/uMAX 3/SC-70 Transistor TT 2246 TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ

    c2271 transistor

    Abstract: transistor C2271 C2271 marking CA sot23-5 ABzy adke sot-23 marking ADQK MAX6504UKP005-T MAX6501UKP125 T ABZT
    Text: 19-1280; Rev 5; 10/06 Low-Cost, +2.7V to +5.5V, Micropower Temperature Switches in SOT23 and TO-220 _Features The MAX6501–MAX6504 low-cost, fully integrated temperature switches assert a logic signal when their die temperature crosses a factory-programmed threshold.


    Original     		PDF O-220 MAX6501 MAX6504 MAX6501/MAX6503 MAX6504UKN035+ MAX6504UKN025 MAX6504UKN015 MAX6504UKP015 MAX6504UKN005-T MAX6504UKN015-T c2271 transistor transistor C2271 C2271 marking CA sot23-5 ABzy adke sot-23 marking ADQK MAX6504UKP005-T MAX6501UKP125 T ABZT

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    MP105

    Abstract: AX6502 21-0064B sot23-5l marking code TS MP055 marking ADVT 0042C MP065 ABzy MP-055
    Text: 19-1280; Rev 5; 10/06 Low-Cost, +2.7V to +5.5V, Micropower Temperature Switches in SOT23 and TO-220 _Features The MAX6501–MAX6504 low-cost, fully integrated temperature switches assert a logic signal when their die temperature crosses a factory-programmed threshold.


    Original     		PDF O-220 MAX6501 MAX6504 MAX6501/MAX6503 MP105 AX6502 21-0064B sot23-5l marking code TS MP055 marking ADVT 0042C MP065 ABzy MP-055

    advu

    Abstract: abzt 5k sot23 MAX6501 MAX6504 ADQK adke sot-23
    Text: 19-1280; Rev 5; 10/06 Low-Cost, +2.7V to +5.5V, Micropower Temperature Switches in SOT23 and TO-220 _Features The MAX6501–MAX6504 low-cost, fully integrated temperature switches assert a logic signal when their die temperature crosses a factory-programmed threshold.


    Original     		PDF O-220 MAX6501 MAX6504 MAX6504 advu abzt 5k sot23 ADQK adke sot-23

    marking ADQK

    Abstract: acfv marking code acga marking code ABzy marking 15C sot23 MAX6501 MAX6504 abzt marking ADVT ADQK
    Text: 19-1280; Rev 6; 2/11 Low-Cost, +2.7V to +5.5V, Micropower Temperature Switches in SOT23 _Features The MAX6501–MAX6504 low-cost, fully integrated temperature switches assert a logic signal when their die temperature crosses a factory-programmed threshold.


    Original     		PDF MAX6501 MAX6504 MAX6501/MAX6503 571mW 247mW) MAX6504 marking ADQK acfv marking code acga marking code ABzy marking 15C sot23 abzt marking ADVT ADQK

    BA204

    Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
    Text: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)


    Original     		PDF KBF0x0800M 8Mx16) 4Mx16) 115-Ball 80x13 BA204 ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153

    SAMSUNG MCP

    Abstract: MCP NAND SAMSUNG MCp nand UtRAM Density
    Text: Preliminary MCP MEMORY K5Q5764G0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - 256Mb NAND C-Die_Ver 2.6 - 64Mb UtRAM B-Die(Burst)_Ver 0.4


    Original     		PDF K5Q5764G0M 16Mx16) 4Mx16) 256Mb 111-Ball SAMSUNG MCP MCP NAND SAMSUNG MCp nand UtRAM Density

    Untitled

    Abstract: No abstract text available
    Text: RAST 2.5 Power Semi-Automatic Terminator Machine RAST 2.5 Power SEMI-AUTOMATIC TERMINATOR MACHINE For Appli-Mate Connectors Order No. 62300-6000 Operation Manual Description Operation Maintenance Doc: No: TM-623006000 Revision: C Release Date: 04-28-09


    Original     		PDF TM-623006000

    ADQK

    Abstract: ABzy TO220-7 ADKE ACDP MAX6501 MAX6504 abzt ACGC marking ACAG
    Text: 19-1280; Rev 5; 10/06 Low-Cost, +2.7V to +5.5V, Micropower Temperature Switches in SOT23 and TO-220 _Features The MAX6501–MAX6504 low-cost, fully integrated temperature switches assert a logic signal when their die temperature crosses a factory-programmed threshold.


    Original     		PDF O-220 MAX6501 MAX6504 MAX6504 ADQK ABzy TO220-7 ADKE ACDP abzt ACGC marking ACAG

    Untitled

    Abstract: No abstract text available
    Text: J IL # 5"20 V I T I Â U T O r I L E T T A N T I I N A C C . Z I N C A T O Q .T A ' 2 #5-20 S E L F - T A P P I N G S C R E W S , Z I N C P L . S T E E L C G »TY 2 ^ 1 CORPO C O R A Z Z A CC A B L E CLAMP BODY) D I S E G N O I N D I CA I CP * N . 1 8 2 9 3 0 - 1


    OCR Scan     		PDF UNA55EMBL

    DRAM "deep trench" capacitor

    Abstract: No abstract text available
    Text: ».ISrtM IJ*. l.'VlALllf- r tr r U L n ttJ IU H S M E M O R IE S Johann Hanw * WcJf Henkel * KjrMwtrct Hwnlngr The 64M-bit DRAM: A Ä m f i A U . , , « rl r iI tM^ lr rI il ui i tr wy l u : « rW' ll iI iI £nJ hF r « - - I - l— - m i im m I \ J I L I IV /


    OCR Scan     		PDF 64M-bà 64M-bit -ii-1111 DRAM "deep trench" capacitor

    MTA11200

    Abstract: charger IC NiMh 4 ch 0012-BB
    Text: $ MTA11200 M ic r o c h ip ¡JJGADGE^Intelligent Battery Management I.C. FEATURES BENEFITS • Digitally integrates battery charge and discharge current to provide an accurate state of charge indica­ tion • Provides accurate, real-time battery capacity infor­


    OCR Scan     		PDF MTA11200 MTA11200 charger IC NiMh 4 ch 0012-BB