TLE4913
Abstract: AEB02800 AEP02801 AET02802-17
Text: Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
SC59-3-x
TLE4913
AEB02800
AEP02801
AET02802-17
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
HALL EFFECT TRANSISTOR 17S
Abstract: smd transistor 015g MAGNETIC SENSOR TRANSISTOR 17S marking code 015g 4 Pin SMD Hall sensors smd code 015g SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag tsop6 marking DC AEB02800
Text: PRELIMINARY Low Power Hall Switch TLE 4917 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
131VS
Abstract: No abstract text available
Text: Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
SC59-3-x
131VS
|
MAGNETIC SENSOR TRANSISTOR 17S
Abstract: No abstract text available
Text: Low Power Hall Switch TLE 4917 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
SC59-3-x
TLE4913
|
MAGNETIC SENSOR TRANSISTOR 17S
Abstract: smd transistor 015g smd code 015g 4917 HALL EFFECT TRANSISTOR 17S marking code 015g AEB02800 AEP02801 AET02802-17 SMD TRANSISTOR MARKING ME
Text: Low Power Hall Switch TLE 4917 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
AEB02800
Abstract: AEP02801 AET02802-17
Text: Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
HALL EFFECT TRANSISTOR 17S
Abstract: smd code 015g smd transistor 015g AEB02800 AEP02801 AET02802-17 Magnetic resistance probe
Text: Low Power Hall Switch TLE 4917 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
TRANSISTOR SMD MARKING CODE ym
Abstract: AEB02800 AEP02801 AET02802-17 MARKING CODE SMD IC Hall IC Switch smd marking code 4913
Text: Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|
SMD Hall sensors
Abstract: AEB02800 AEP02801 AET02802-17 TLE4913
Text: Low Power Hall Switch TLE 4913 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
SC59-3-x
TLE4913
SMD Hall sensors
AEB02800
AEP02801
AET02802-17
|
Untitled
Abstract: No abstract text available
Text: Low Power Hall Switch TLE 4917 Features • Micro power design • 2.4 V to 5.5 V battery operation • High sensitivity and high stability of the magnetic switching points • High resistance to mechanical stress • Digital output signal • Switching for both poles of a magnet omnipolar
|
Original
|
PDF
|
|