Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AEROFLEX GAN POWER AMPLIFIER Search Results

    AEROFLEX GAN POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    AEROFLEX GAN POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaN amplifier

    Abstract: Aeroflex GaN power amplifier GaN Amplifier 18GHz PA020180-3922 rf power amplifier with s parameters
    Text: Broadband Standard Product PA020180-3922 GaN High Power Amplifier Module Broadband Power 2GHz to 18GHz 8Watts CW March 11, 2009 Preliminary www.aeroflex.com/bband DESCRIPTION FEATURES Our new industry leading broadband power amplifier designs provide performance without sacrificing output power. The ultra wideband performance


    Original     		PDF PA020180-3922 18GHz 39dBm 16GHz 46dBm SCD10049 GaN amplifier Aeroflex GaN power amplifier GaN Amplifier 18GHz rf power amplifier with s parameters

    SMA 65/125

    Abstract: sub-d 50 pin sub-d 37 pin Aeroflex GaN power amplifier
    Text: Broadband Standard Product PA022023-38 GaN High Efficiency Power Amplifier 6 Watts from 2.2GHz to 2.3GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA022023-38 is a Narrow band high efficiency power amplifier and is ideal for use as a stable IF Amplifier, wireless, point-to-point


    Original     		PDF PA022023-38 38dBm SCD10034 SMA 65/125 sub-d 50 pin sub-d 37 pin Aeroflex GaN power amplifier

    Aeroflex GaN power amplifier

    Abstract: tms 980 GaN amplifier PA001005-28
    Text: Broadband Standard Product PA001005-28 GaN Medium Power Amplifier 100MHz to 500MHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001005-28 is a power amplifier in a compact package and is ideal for use as a stable gain block, IF Amplifier or medium Power


    Original     		PDF PA001005-28 100MHz 500MHz 500MHz 28dBm SCD10046 Aeroflex GaN power amplifier tms 980 GaN amplifier

    GaN amplifier

    Abstract: Aeroflex GaN power amplifier PA001040-32
    Text: Broadband Standard Product PA001040-32 GaN High Efficiency Driver Amplifier Broadband Power 100MHz to 4GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001040-32 is a broadband high efficiency driver amplifier in a compact package and is ideal for use as a stable gain block, IF


    Original     		PDF PA001040-32 100MHz 32dBm SCD10045 GaN amplifier Aeroflex GaN power amplifier

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F

    CMPA0060002F

    Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier

    CMPA0060002F

    Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
    Text: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F JESD22
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22

    westcode scr

    Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
    Text: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes


    Original     		PDF G15000CR MK100104 westcode scr toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR

    Untitled

    Abstract: No abstract text available
    Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of


    Original     		PDF

    EPC8004

    Abstract: No abstract text available
    Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original     		PDF AN015 EPC8000 ATS-54150K-C2-R0 EPC8004

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


    Original     		PDF 0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide