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    TECDIA Search Results

    TECDIA Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BMS100J2H Tecdia Capacitor: 10PF: 5%: SMD Original PDF
    BMS100J2K Tecdia Capacitor: 10PF: 5%: SMD Original PDF
    BMS100K2C Tecdia Capacitor: 10PF: 10%: SMD Original PDF
    BMS100K2F Tecdia Capacitor: 10PF: 10%: SMD Original PDF
    BMS100K2H Tecdia Capacitor: 10PF: 10%: SMD Original PDF
    BMS100K2K Tecdia Capacitor: 10PF: 10%: SMD Original PDF
    BMS100M2F Tecdia Capacitor: 10PF: 20%: SMD Original PDF
    BMS100M2H Tecdia Capacitor: 10PF: 20%: SMD Original PDF

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    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    CC45T47K240G5C2

    Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
    Text: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB


    Original     		PDF AMMC-5024 30KHz AMMC-5024 40GHz AV02-0704EN CC45T47K240G5C2 Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F

    CMPA0060025F

    Abstract: CMPA0060025F-TB CMPA2560002F JESD22
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22

    CMPA0060002F

    Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier

    TBT-06M20

    Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA00 60002F TBT-06M20 SMF3-12 aeroflex SMF3-12

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F

    DC bias of FET

    Abstract: Tecdia DC bias of gaas FET GaAs FETs bias tee fet rf high power Excelics packaging
    Text: Recommendations for the Handling, Mounting and Biasing of High Power GaAs FETs A. Handling Precautions: All GaAs FETs are sensitive to electrostatic discharge. It is Excelics policy that all GaAs FETs will be shipped in electrostatic protective packaging and the user must pay careful attention to the


    Original     		PDF

    K2F transistor

    Abstract: Tecdia BMS150 Dielectrics BMS101 M2P diode K2F 9 K2t transistor 10X10 12X12
    Text: TYPE-B CLASS2 Home > Products > Capacitors > B-type > B-Type High K Dielectrics Class 2 High K Dielectrics Class 2 Capacitance pF Part No. B C F K2C M2C K2C M2C K2C M2C K2C M2C K2C M2C K2C M2C K2F M2F K2F M2F K2F M2F K2F M2F Tolerance -Class- size Code (mils)


    Original     		PDF 10X10) 12X12) 16X16) 20X20) 24X24) 31X31) K2F transistor Tecdia BMS150 Dielectrics BMS101 M2P diode K2F 9 K2t transistor 10X10 12X12

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F

    TBTH06M20

    Abstract: CMPA0060025F
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB

    CMS101K2KC

    Abstract: KGA4130D Tecdia transimpedance amplifier 5 GHz GTD-18408
    Text: Preliminary Data Sheet December 1999 1KGA4130D 10Gbps AGC Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.


    Original     		PDF KGA4130D 10Gbps 10pA/Hz 120nsec. KGA4130D GTD-18275 100pF CMS101K2KC Tecdia transimpedance amplifier 5 GHz GTD-18408

    TBT-03M1

    Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
    Text: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060005F CMPA0060005F TBT-03M1 Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F

    CMPA0060002F

    Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
    Text: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F JESD22
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22

    CC45T47K240G5-C2

    Abstract: SA1515BX101M2HX5 CC45T47K240G5C2 SK04B102M11A6 AVX0402YG104ZAT2A MMA-005022 MicroMetrics 7V170 GRP155F51A474ZDO2B 00xF
    Text: MMA-005022 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012 Features: •       Frequency Range: 30KHz – 50 GHz P1dB: +22 dBm Vout: 7V p-p @50Ω Gain: 15.5 dB Vdd =7 V Ids = 200 mA Input and Output Fully Matched to 50 Ω Die size: 2350 x 1050 x 50 um


    Original     		PDF MMA-005022 30KHz-50GHz 30KHz MMA-005022 30KHz 50GHz SA1515BX101M2HX5 AVX0402YG104ZAT2A SK04B102M11A6 GRP155F51A474ZDO2B CC45T47K240G5-C2 CC45T47K240G5C2 MicroMetrics 7V170 00xF