pt 8799
Abstract: No abstract text available
Text: , - ., 5 Low Noise Packaged PHEMT S3A lpha AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFP02N2-55,
AFP02N2-56
pt 8799
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AFP02N2-55
Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
Text: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFP02N2-55,
AFP02N2-56
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AFP02N2-55
AFP02N2
pt 8799
AFP02N2-56
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
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617 730 057
Abstract: h 9740 transistor 9740
Text: 3/MIÉ& Low Noise PHEMT Chip AFP02N2-00 Dimensions in Microns Thickness = 100 Features • Low Noise Figure, 0.70 dB at 12 GHz ■ High Associated Gain, 10.0 dB at 12 GHz ■ High MAG, > 12.5 dB at 12 GHz ■ 0.25 nm Ti/Pt/Au Gates ■ Passivated Surface Description
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AFP02N2-00
AFP02N3-00
617 730 057
h 9740
transistor 9740
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AFP02N2-00
Abstract: 40690 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 103420
Text: ESAlpini Low Noise PHEMT Chip AFP02N2-00 Dimensions in Microns Thickness = 100 Features Low Noise Figure, 0 .7 0 dB at 12 G H z High Associated G ain, 1 0 .0 dB a t 12 G H z High M A G , > 1 2 .5 dB a t 12 G H z 0 .2 5 [xm Ti/Pt/A u G ates P assivated Surface
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AFP02N2-00
AFP02N3-00
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AFP02N2-00
40690
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
103420
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AFP02N2
Abstract: No abstract text available
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Numerical Index Part Number Page Part Number Page AA022N1-00 3-18 AFM06P2-00 3-42 AA022N1-65 3-19 AFM08P2-00 3-44 AA022P1-00 3-13 AFP02N2-00 3-58 AA022P1-65 3-16 AFP02N2-55 3-62 AA028N1-00 3-29 AFP02N2-56 3-62
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AA022N1-00
AA022N1-65
AA022P1-00
AA022P1-65
AA028N1-00
AA028P1-00
AA028P2-00
AA028P3-00
AA035P2-00
AA035P3-00
AFP02N2
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AFM02N8-32
Abstract: 02N5 02N50 AF035P1-00
Text: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400
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02N5-00
AFP02N2-00
AFP02N8-00
AFM02N5-55/56
AFP02N2-55/56
AFP02N8-55/56
AFM02N8-32
-55Z-56
AF035P1-00
AFM06P2-00
AFM02N8-32
02N5
02N50
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SMP1301-01
Abstract: SC9103-10 SMS3994 SMP1301-05 SMP1300 at002d8-25 A60030P535 spd 3465-18 SMP1312-12 SMV1400-109
Text: Part Number Index A lphan um erical Index for G a A s MMIC and F E T P ro d u cts PART NUMBER PAGE ADC02D2-12 5 ADH01D2-24 5 ADHD1D2-24 5 AF002C1-32 4 AF002C1-39 4 AF002C4-39 4 AF002N2-32 6 7 AF035P1-00 7 AFM02N5-00 AFM02N5-55/56 7 AFM02N8-32 7 7 AFM06P2-00
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ADC02D2-12
ADH01D2-24
ADHD1D2-24
AF002C1-32
AF002C1-39
AF002C4-39
AF002N2-32
AF035P1-00
AFM02N5-00
AFM02N5-55/56
SMP1301-01
SC9103-10
SMS3994
SMP1301-05
SMP1300
at002d8-25
A60030P535
spd 3465-18
SMP1312-12
SMV1400-109
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