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    AFT21S230S Price and Stock

    NXP Semiconductors AFT21S230SR3

    RF MOSFET LDMOS 28V NI780
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    Rochester Electronics LLC AFT21S230SR3

    RF MOSFET LDMOS 28V NI780
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    AFT21S230S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT21S230SR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 2.1GHZ 230W NI780S-6 Original PDF
    AFT21S230SR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 2.1GHZ 230W NI780S-6 Original PDF

    AFT21S230S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3

    AFT21S230S

    Abstract: aft21s232s C5750X7S2A106M
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3 aft21s232s C5750X7S2A106M

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 0, 10/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3

    AFT21S230SR3

    Abstract: C5750X7S2A106M NI-780S-6 NI-780 542w
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3 C5750X7S2A106M NI-780S-6 NI-780 542w

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF