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Advanced Semiconductor Inc AGR09180EF RF MOSFET Transistors 865-895MHz 38Watt Gain 18.25dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR09180EF					1 - 10 $90.38 100 $86.65 1000 $86.65 10000 $86.65	Get Quote

AGR09180EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR09180EF		Agere Systems	FET, 180W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09180EF		TriQuint Semiconductor	180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR09180EF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AGR09180EF Abstract: JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A	PDF
AGR09180EF Abstract: JESD22-C101A transistor z14 L Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 AGR09180EF suit-20 AGR19K180U JESD22-C101A transistor z14 L	PDF
z24 mosfet Abstract: No abstract text available Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global	Original	AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet	PDF
c5047 Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW Text: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-155RFPP DS04-123RFPP) c5047 JESD22-C101A 100B3R9BW 100B4R7 100B4R7BW	PDF
C40 Sprague Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180E Hz--895 AGR09180E DS04-031RFPP DS02-342RFPP) C40 Sprague C201A Z25 transistor UT-141A AGR09180EF AGR09180EU JESD22-C101A	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF
c5047 Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180E Hz--895 DS02-342RFPP c5047	PDF
AGR09180E Abstract: AGR09180EF AGR09180EU JESD22-A114 Text: Preliminary Product Brief April 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180E Hz--895 AGR09180E PB03-082RFPP PB03-082RFPP) AGR09180EF AGR09180EU JESD22-A114	PDF