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    AGRB10E Search Results

    AGRB10E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGRB10E Agere Systems 10 W, 1.0 GHz - 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGRB10E Agere Systems FET Transistor, 10W, 1GHz to 2.7GHz, N-Channel E-Mode Original PDF

    AGRB10E Datasheets Context Search

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    AGRB10E

    Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
    Text: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)


    Original     		AGRB10E AGRB10E DS04-097RFPP DS03-164RFPP) AGRB10E equivalent JESD22-C101A 1661 mhz PDF

    AGRB10E

    Abstract: JESD22-C101A Inmarsat
    Text: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)


    Original     		AGRB10E AGRB10E envir32/F, DS03-164RFPP DS03-038RFPP) JESD22-C101A Inmarsat PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM PDF