Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AHR SOT23 Search Results

    AHR SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    AHR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    ahr transistor

    Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197K L2SD1781K 236AB) L2SB1197KQLT1 L2SB1197KQLT1G 3000/Tape L2SB1197KRLT1 L2SB1197KRLT1G ahr transistor L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq

    ahr transistor

    Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr transistor L2SB1197KRLT1G L2SB1197K sot23 ahq

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQLT1G L2SD1781K AEC-Q101 236AB) 3000/Tape 10000/Tape L2SB1197KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. 1 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQ L2SD1781K AEC-Q101 236AB) 3000/Tape L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    ahr TRANSISTOR smd

    Abstract: SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking
    Text: Transistors SMD Type Low Frequency Transistor 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SB1197K OT-23 -50mA -100mA 100MHz ahr TRANSISTOR smd SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking

    2SB1197K

    Abstract: AHp MARKING
    Text: 2SB1197K SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		PDF 2SB1197K OT-23-3L 2SB1197K -100mA -50mA 100MHz AHp MARKING

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23


    Original     		PDF L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197K OT-23 3000/Tape

    2SB1197K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current


    Original     		PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    2SB1197K

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA


    Original     		PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    2SB1197

    Abstract: 2SD1781 ahr sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz 2SB1197 2SD1781 ahr sot23

    sot23 ahq

    Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
    Text: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz sot23 ahq sot23 ahr AHp sot23 ahr transistor ahr sot23

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SB1197K OT-23 -50mA -100mA 100MHz

    2SB1197

    Abstract: ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23
    Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Low VCE sat .VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA). IC =-0.8A. Complements the 2SD1781.


    Original     		PDF 2SB1197 /-50mA) 2SD1781. OT-23 -50uA, -500mA, -50mA -100mA -50mA, 100MHz 2SB1197 ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23

    2SB1197

    Abstract: No abstract text available
    Text: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 Features: SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25°C) Rating


    Original     		PDF 2SB1197 OT-23 OT-23 -500mA, -50mA -100mA -20mA, 100MHz 19-Apr-2011 2SB1197

    2SB1197

    Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
    Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781


    Original     		PDF 2SB1197 OT-23 /-50mA) 2SD1781 2SB1197-P 2SB1197-Q 2SB1197-R -500mA, -50mA 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180

    2SB1197

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SB1197 Pb z Small surface mounting type. z Corredtor peak current Max.=1000mA z Suitable for high packing density. z Low voltage(Max.=40v) z High saturation current capability.


    Original     		PDF 2SB1197 1000mA) OT-23 BL/SSSTC016 2SB1197

    sot23 ahq

    Abstract: ahr TRANSISTOR sot23 ahr 2SB1197 ahr sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SB1197 Pb z Small surface mounting type. z Corredtor peak current Max.=1000mA z Suitable for high packing density. z Low voltage(Max.=40v) z High saturation current capability.


    Original     		PDF 2SB1197 1000mA) OT-23 BL/SSSTC016 sot23 ahq ahr TRANSISTOR sot23 ahr 2SB1197 ahr sot23

    sot23 ahq

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package


    Original     		PDF 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R OT-23 sot23 ahq

    2sb1197

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package


    Original     		PDF 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R OT-23 2sb1197

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package


    Original     		PDF 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1197 Features • • • x PNP Silicon Epitaxial Transistors Small Package Mounting:any position ROHS Compliant


    Original     		PDF 2SB1197 OT-23