ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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Original
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PDF
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L2SD1781KQLT1G
L2SD1781KQLT1G
S-L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
AEC-Q101
81KQLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1
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Original
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PDF
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L2SD1781KXLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT1G
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.
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Original
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PDF
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
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0440
Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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Original
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PDF
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L2SD1781KQLT1G
L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
0440
L2SD1781KRLT1G
marking AFR
AFR marking
transistor afr
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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Original
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PDF
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L2SD1781KQLT1G
L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1
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Original
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PDF
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L2SD1781KXLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT1G
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
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Original
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PDF
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L2SD1781KQLT1G
L2SD1781KQLT1G
S-L2SD1781KQLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
AEC-Q101
81KQLT1G
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