1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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PDF
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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AI01378
Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
Text: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
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Original
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PDF
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M29F040
12MHz)
PLCC32
TSOP32
120ns
150ns
AI01378
M29F040
PLCC32
TSOP32
B29F040
512k x 8 chip block diagram
plcc32 pinout
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M29F040
Abstract: PLCC32 TSOP32
Text: M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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Original
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PDF
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M29F040
512Kb
12MHz)
M29F040
PLCC32
TSOP32
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M29F040
Abstract: M29F040B PLCC32 TSOP32 STMicroelectronics PLCC trace code
Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME
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Original
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PDF
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M29F040
512Kb
M29F040
M29F040B
12MHz)
M29F040B
PLCC32
TSOP32
STMicroelectronics PLCC trace code
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M29F040
Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
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Original
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PDF
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M29F040
512Kb
12MHz)
PLCC32
TSOP32
120ns
150ns
M29F040
PLCC32
plcc32 pinout
TSOP32
B29F040
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M29F040
Abstract: M29F040B PLCC32 TSOP32
Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME
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Original
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PDF
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M29F040
512Kb
M29F040
M29F040B
12MHz)
M29F040B
PLCC32
TSOP32
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plcc32 pinout
Abstract: PLCC32 TSOP32 M29F040 X5555
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME
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Original
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PDF
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M29F040
PLCC32
TSOP32
plcc32 pinout
PLCC32
TSOP32
M29F040
X5555
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M29F040
Abstract: PLCC32 TSOP32
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical
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Original
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PDF
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M29F040
12MHz)
PLCC32
TSOP32
M29F040
PLCC32
TSOP32
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plcc32 pinout
Abstract: No abstract text available
Text: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical
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Original
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PDF
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M29F040
12MHz)
PLCC32
TSOP32
M29F040
120ns
150ns
AI01379
PLCC32
plcc32 pinout
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M29F040
Abstract: PLCC32 TSOP32
Text: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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Original
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PDF
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M29F040
12MHz)
PLCC32
M29F040
PLCC32
TSOP32
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M29F040
Abstract: PLCC32 TSOP32
Text: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical
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Original
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PDF
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M29F040
512Kb
12MHz)
M29F040
PLCC32
TSOP32
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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Original
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PDF
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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tsop32 8x20
Abstract: IA10 M29F040 PLCC32 TSOP32 DQ712
Text: SGS-THOMSON Vf li^D [^ Q [IL[l©ir[^©Ki]D(gS M29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical
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OCR Scan
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PDF
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M29F040
512Kx
TSOP32
TSOP32
DQ71212
tsop32 8x20
IA10
M29F040
PLCC32
DQ712
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 1ty s typical ERASE TIME - Sector: 1.0 sec typical - Bulk: 2.5 sec typical
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OCR Scan
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PDF
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M29F040
25fiA
12MHz)
PLCC32S-THOM
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